Abstract: A method and system for fault indication on a substrate. A method of the present invention includes the following steps. It is determined whether data includes at least one suspicious bit. A pattern generator is controlled with the data. A beam of radiation is patterned using the pattern generator. Features are projected by the patterned beam of radiation onto a target portion of a substrate. One or more markers are projected by the patterned beam of radiation onto the substrate indicating the target portions that correspond with the at least one suspicious bit.

Abstract: A lithographic method and apparatus for determining operational parameters of a maskless lithography tool. In an embodiment, an amount of data in a datapath of the maskless lithography system is reduced. A maximum value of at least one operational parameter of the maskless lithography system is determined responsive to the reduced amount of data in the datapath.

Abstract: A lithographic method and apparatus used to pattern an object. An illumination source supplies a beam of radiation. A pattern generator forms a pattern to pattern a beam of radiation using the pattern data. A projection system projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation. A control module determines a respective maximum operational parameter for the illumination source, the pattern generator, and/or the stage.

Abstract: A method and system for fault indication on a substrate. A method of the present invention includes the following steps. It is determined whether data includes at least one suspicious bit. A pattern generator is controlled with the data. A beam of radiation is patterned using the pattern generator. Features in the patterned beam of radiation are projected onto a target portion of a substrate. One or more markers in the patterned beam are projected onto the substrate indicating the target portions that correspond with the at least one suspicious bit.