Abstract: The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm3.

Abstract: A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.

Abstract: A chemical mechanical polishing pad is provided containing a polishing layer having a polishing surface, wherein the polishing layer comprises a reaction product of ingredients, including: an isocyanate terminated urethane prepolymer; and, a curative system, containing a high molecular weight polyol curative; and, a difunctional curative.

Abstract: A CMP polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a (i) curative of from 15 to 30 wt. % of an amine initiated polyol having an average of from 3 to less than 5 hydroxyl groups and a number average molecular weight of 150 to 400, and from 70 to 85 wt. % of an aromatic diamine and a (ii) polyisocyanate prepolymer having a number average molecular weight of from 600 to 5,000 and having an unreacted isocyanate content ranging from 6.5 to 11%. The CMP polishing pad has a tunable tan-delta peak temperature at from 50 to 80° C. which has a value of from 0.2 to 0.8 at the tan-delta peak temperature and is useful for polishing a variety of substrates.

Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water to uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The present invention provides methods of manufacturing a chemical mechanical polishing (CMP polishing) layer for polishing substrates, such as semiconductor wafers comprising providing a composition of a plurality of liquid-filled microelements having a polymeric shell; classifying the composition via centrifugal air classification to remove fines and coarse particles and to produce liquid-filled microelements having a density of 800 to 1500 g/liter; and, forming the CMP polishing layer by (i) converting the classified liquid-filled microelements into gas-filled microelements by heating them, then mixing them with a liquid polymer matrix forming material and casting or molding the resulting mixture to form a polymeric pad matrix, or (ii) combining the classified liquid-filled microelements directly with the liquid polymer matrix forming material, and casting or molding.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 10 to 300 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.

Abstract: The present invention provides methods of CMP polishing a metal surface, such as a copper or tungsten containing metal surface in a semiconductor wafer, the methods comprising CMP polishing the substrate with a CMP polishing pad that has a top polishing surface in a polishing layer which is the reaction product of an isocyanate terminated urethane prepolymer and a curative component comprising a polyol curative having a number average molecular weight of 6000 to 15,000, and having an average of 5 to 7 hydroxyl groups per molecule and a polyfunctional aromatic amine curative, wherein the polishing layer would if unfilled have a water uptake of 4 to 8 wt. % after one week of soaking in deionized (DI) water at room temperature. The methods form coplanar metal and dielectric or oxide layer surfaces with low defectivity and a minimized degree of dishing.

Abstract: The invention is to a method of manufacturing a polishing pad suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The method includes applying droplets of a liquid polymer against a substrate to form a plurality of pores. The liquid polymer contains a nonionic surfactant, the nonionic surfactant has a concentration sufficient to facilitate growth of pores within the liquid polymer and an ionic surfactant has a concentration sufficient to limit growth of the pores within the liquid polymer. Curing the solid polymer forms a polishing pad with final size of the plurality of pores controlled by the concentration of nonionic surfactant and ionic surfactants.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising (i) one or more diisocyanate, polyisocyanate or polyisocyanate prepolymer, (ii) from 40 to 85 wt. % based on the total weight of (i) and (ii) of one or more blocked diisocyanate, polyisocyanate or polyisocyanate prepolymer which contains a blocking agent and has a deblocking temperature of from 80 to 160° C., and (iii) one or more aromatic diamine curative. The reaction mixture has a gel time at 80° C. and a pressure of 101 kPa of from 2 to 15 minutes; the polyurethane reaction product has a residual blocking agent content of 2 wt. % or less; and the polishing layer exhibits a density of from 0.6 to 1.2 g/cm3.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: The polishing pad is for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of H12MDI/TDI with polytetramethylene ether glycol to form an isocyanate-terminated reaction product. The isocyanate-terminated reaction product has 8.95 to 9.25 weight percent unreacted NCO and has an NH2 to NCO stoichiometric ratio of 102 to 109 percent. The isocyanate-terminated reaction product is cured with a 4,4?-methylenebis(2-chlororaniline) curative agent. The cast polyurethane polymeric material, as measured in a non-porous state, having a shear storage modulus, G? of 250 to 350 MPa as measured with a torsion fixture at 30° C. and 40° C. and a shear loss modulus, G? of 25 to 30 MPa as measured with a torsion fixture at 40° C. The polishing pad having a porosity of 20 to 50 percent by volume and a density of 0.60 to 0.95 g/cm3.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ?10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of >10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

Abstract: A method of forming a chemical mechanical polishing pad polishing layer is provided, including: providing a mold having a base with a negative of a groove pattern; providing a poly side (P) liquid component; providing an iso side (I) liquid component; providing a pressurized gas; providing an axial mixing device; introducing the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas to the axial mixing device to form a combination; discharging the combination from the axial mixing device at a velocity of 5 to 1,000 m/sec toward the base; allowing the combination to solidify into a cake; deriving the chemical mechanical polishing pad polishing layer from the cake; wherein the chemical mechanical polishing pad polishing layer has a polishing surface with the groove pattern formed into the polishing surface; and wherein the polishing surface is adapted for polishing a substrate.