Patents by Inventor Maruf Ahmed
Maruf Ahmed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230336125Abstract: Doherty power amplifiers (DPAs), and related circuits, devices, systems and methods of operation, are disclosed herein. In an example embodiment, a system includes a first transistor device operable as a carrier amplifier, a second transistor device operable as a peaking amplifier, and at least one first integrated passive device (IPD) coupled between a combining node and each of carrier and peaking amplifier output ports. The system includes a first frequency-corrective network coupling the carrier amplifier output port with the node, where the network is formed at least in part by the at least one first IPD and is configured to operate as a first quasi-inverter network that includes a low-pass network. Additionally, the system includes a second frequency-corrective network coupling the peaking amplifier output port with the node, where the network is formed at least in part by the at least one first IPD and includes a bandpass network.Type: ApplicationFiled: April 13, 2022Publication date: October 19, 2023Inventor: Maruf Ahmed
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Publication number: 20220192549Abstract: A pulse oximeter device is provided that includes a first light emitting element configured to emit red light, a second light emitting element configured to emit green light or near infrared (NIR) light, and a sensor element configured to detect red and green light or detect red and NIR light. The sensor element may have a substantially circular geometry, and the first light emitting element and the second light emitting element may each have a substantially arc-shaped geometry, and wherein the sensor element is positioned between the first light emitting element and the second light emitting element, or the first and second light emitting elements together may have a substantially circular geometry, and wherein the sensor element comprises one or more substantially arc-shaped portions, and wherein the first and second light emitting elements are partially surrounded, or fully surrounded, by the sensor element.Type: ApplicationFiled: March 10, 2022Publication date: June 23, 2022Inventors: Yasser T. Khan, Donggeon Han, Jonathan KangYu Ting, Maruf Ahmed, Ana Claudia Arias
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Patent number: 10587226Abstract: An amplifier device includes an input terminal, an output terminal, a first transistor having a control terminal and first and second current-carrying terminals, and a class-J circuit coupled between the second current-carrying terminal of the first transistor and the output terminal and configured to harmonically terminate the first transistor. The class-J circuit may include a first resonator, characterized by a first resonant frequency substantially equal to a second harmonic frequency. The first resonator may be coupled between the second current-carrying terminal and a voltage reference. A shunt inductor that is distinct from the first resonator may be coupled between the second current-carrying terminal and the voltage reference.Type: GrantFiled: March 20, 2018Date of Patent: March 10, 2020Assignee: NXP USA, Inc.Inventors: Maruf Ahmed, Margaret A. Szymanowski, Joseph Staudinger
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Publication number: 20190296693Abstract: An amplifier device includes an input terminal, an output terminal, a first transistor having a control terminal and first and second current-carrying terminals, and a class-J circuit coupled between the second current-carrying terminal of the first transistor and the output terminal and configured to harmonically terminate the first transistor. The class-J circuit may include a first resonator, characterized by a first resonant frequency substantially equal to a second harmonic frequency. The first resonator may be coupled between the second current-carrying terminal and a voltage reference. A shunt inductor that is distinct from the first resonator may be coupled between the second current-carrying terminal and the voltage reference.Type: ApplicationFiled: March 20, 2018Publication date: September 26, 2019Inventors: Maruf AHMED, Margaret A. SZYMANOWSKI, Joseph STAUDINGER
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Patent number: 9748902Abstract: In various embodiments, a semiconductor package includes a carrier amplifier connected to a first output of a power divider, and a first output matching network connected to the carrier amplifier and an output combining node. The first output matching network exhibits a phase delay during operation of the carrier amplifier. The semiconductor package includes a phase advance network connected to the first output matching network. The phase advance network is configured to offset at least a portion of the phase delay of the first output matching network. The semiconductor package includes a peaking amplifier connected to a second output of the power divider and the output combining node, and a second output matching network connected to the peaking amplifier.Type: GrantFiled: May 15, 2015Date of Patent: August 29, 2017Assignee: NXP USA, INC.Inventors: Maruf Ahmed, Joseph Staudinger
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Patent number: 9692373Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.Type: GrantFiled: March 11, 2016Date of Patent: June 27, 2017Assignee: NXP USA, INC.Inventors: Joseph Staudinger, Maruf Ahmed, Hussain H. Ladhani
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Publication number: 20160336903Abstract: In various embodiments, a semiconductor package includes a carrier amplifier connected to a first output of a power divider, and a first output matching network connected to the carrier amplifier and an output combining node. The first output matching network exhibits a phase delay during operation of the carrier amplifier. The semiconductor package includes a phase advance network connected to the first output matching network. The phase advance network is configured to offset at least a portion of the phase delay of the first output matching network. The semiconductor package includes a peaking amplifier connected to a second output of the power divider and the output combining node, and a second output matching network connected to the peaking amplifier.Type: ApplicationFiled: May 15, 2015Publication date: November 17, 2016Applicant: Freescale Semiconductor, Inc.Inventors: Maruf Ahmed, Joseph Staudinger
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Publication number: 20160197589Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Applicant: FREESCALE SEMICONDUCTOR INC.Inventors: JOSEPH STAUDINGER, MARUF AHMED, HUSSAIN H. LADHANI
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Patent number: 9319010Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.Type: GrantFiled: December 16, 2014Date of Patent: April 19, 2016Assignee: FREESCALE SEMICONDUCTOR INC.Inventors: Joseph Staudinger, Maruf Ahmed, Hussain H. Ladhani
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Patent number: 8879709Abstract: A method includes receiving Local Exchange Routing Guide (LERG) telephone number (TN) data; comparing the LERG TN data with telephone service provider (TSP) TN data; determining whether one or more differences exist between the LERG TN data and the TSP TN data based on the comparing; generating one or more executable statements for updating the one or more differences that exist based on the comparing; and executing the one or more executable statements to match the TSP TN data with the LERG TN data.Type: GrantFiled: October 5, 2009Date of Patent: November 4, 2014Assignee: Verizon Patent and Licensing Inc.Inventors: Bhaskar R. Gudlavenkatasiva, Maruf Ahmed, Sutap Chatterjee, Pradeepan Ravindranathan
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Publication number: 20110081012Abstract: A method includes receiving Local Exchange Routing Guide (LERG) telephone number (TN) data; comparing the LERG TN data with telephone service provider (TSP) TN data; determining whether one or more differences exist between the LERG TN data and the TSP TN data based on the comparing; generating one or more executable statements for updating the one or more differences that exist based on the comparing; and executing the one or more executable statements to match the TSP TN data with the LERG TN data.Type: ApplicationFiled: October 5, 2009Publication date: April 7, 2011Applicant: VERIZON PATENT AND LICENSING, INC.Inventors: Bhaskar R. Gudlavenkatasiva, Maruf Ahmed, Sutap Chatterjee, Pradeepan Ravindranathan
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Publication number: 20100150329Abstract: A computer-readable medium may include computer-executable instructions. The computer-executable instructions may include instructions for receiving, from a provisioning unit, an order pertaining to a set of telephone numbers and an address, separating the order into sub-orders, each sub-order corresponding to each of the telephone numbers, sending one of the sub-orders to a catalog server over a message, a telephone number that corresponds to the one sub-order being outside of a rate center to which the address belongs, receiving a response from the catalog server, and sending a reply to the order to the provisioning unit.Type: ApplicationFiled: December 12, 2008Publication date: June 17, 2010Applicant: VERIZON DATA SERVICES LLCInventors: Sunil Kumar, Josy John, Premanand Sivakkolundhu, Maruf Ahmed