Abstract: Embodiments of the present technology may include an electroplating system. The electroplating system may include a vessel. The system may also include a wafer holder configured for holding a wafer in the vessel. The system may further include an anode in the vessel. In addition, the method may include a plurality of thief electrodes. For each thief electrode of the plurality of thief electrodes, a thief current channel may be defined by a channel wall. The channel wall for each thief electrode may define an aperture adjacent to the wafer holder. The thief current channel may extend from each thief electrode to the aperture. The system may include a current control system in electrical communication with the plurality of thief electrodes. The current control system may be configured such that an amount of current delivered to each thief electrode can be adjusted independently.

Abstract: Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.

Abstract: Embodiments of the present technology may include an electroplating system. The electroplating system may include a vessel. The system may also include a wafer holder configured for holding a wafer in the vessel. The system may further include an anode in the vessel. In addition, the method may include a plurality of thief electrodes. For each thief electrode of the plurality of thief electrodes, a thief current channel may be defined by a channel wall. The channel wall for each thief electrode may define an aperture adjacent to the wafer holder. The thief current channel may extend from each thief electrode to the aperture. The system may include a current control system in electrical communication with the plurality of thief electrodes. The current control system may be configured such that an amount of current delivered to each thief electrode can be adjusted independently.

Abstract: Methods of wetting a semiconductor substrate may include forming a controlled atmosphere in a processing chamber housing the semiconductor substrate. The semiconductor substrate may define a plurality of features, which may include vias. The methods may include flowing a wetting agent into the processing chamber. A chamber pressure may be maintained below about 100 kPa. The methods may also include wetting the plurality of features defined in the substrate.

Abstract: Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to provide a desired variation. In addition to metal alloys, alternative embodiments include processes for improving the deposition of single metal features.

Abstract: Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to provide a desired variation. In addition to metal alloys, alternative embodiments include processes for improving the deposition of single metal features.

Abstract: In a workpiece processor, a head is moveable onto a bowl to form a process chamber. A workpiece can be cleaned in the processor by immersing the workpiece into a liquid bath in the bowl and then boiling the liquid. Vacuum may be applied to the chamber to reduce the pressure within the chamber, thereby reducing the boiling temperature of the liquid and allowing processing at lower temperatures. In a separate method for prewetting a workpiece, a humid gas is provided into the process chamber and condenses on the workpiece. In another separate method for wetting a workpiece, liquid water is provided into the bowl, with the workpiece above the liquid water. Water vapor is created in the process chamber by applying vacuum to the process chamber. The vapor wets the workpiece. The workpiece is then further wetted by submerging the workpiece into the liquid water.

Abstract: Electric potential, current density, agitation, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to provide a desired variation. In addition to metal alloys, alternative embodiments include processes for improving the deposition of single metal features.

Abstract: A chemical mixture etches chemically different materials, layers, or films on the surface of a semiconductor wafer or other workpiece at approximately the same rate. The different layers may include, for example, a first material, having a first chemical composition, encapsulated within or sandwiched between one or more materials having chemical compositions different from the first material. For example, a TiN layer may be encapsulated within or sandwiched between two or more TEOS layers. By etching away the different layers at approximately the same rate, undercutting of the encapsulated or sandwiched layer is substantially or entirely prevented. Flaking, liftoff, and similar defects are avoided.

Abstract: Electric potential, current density, and deposition rate are controlled to deposit metal alloys, such as tin based solder alloys or magnetic alloys, with minimal variations in the weight ratios of alloying metals at different locations within the deposited metal alloy feature. Alternative embodiments include processes that form metal alloy features wherein the variation in weight ratio of alloying metals within the feature is not necessarily minimized, but is controlled to provide a desired variation.

Abstract: A centrifugal spray processor for processing semiconductor wafers uses larger numbers of spray nozzles. Each spray nozzle delivers a reduced volume of liquid, to reduce consumption of liquid process chemicals. The nozzles operate at a higher back pressure. The increased number of nozzles, offset nozzle patterns and groupings of nozzles, lower nozzle flow rates, and higher nozzle back pressures, provide improved processing results. The improved spray system may be provided as a retrofit kit.

Abstract: In a workpiece process end point detection system, light is diffused and then light intensity or color is sensed. Optical noise is greatly reduced and more accurate end point detection can be made. A light emitter and a light sensor may be located within a workpiece process chamber. A housing around the light emitter and the light sensor seals out process fluids and also diffuses light passing through. The diffused light may be optically filtered before reaching the light sensor.

Abstract: A centrifugal spray processor for processing semiconductor wafers uses larger numbers of spray nozzles. Each spray nozzle delivers a reduced volume of liquid, to reduce consumption of liquid process chemicals. The nozzles operate at a higher back pressure. The increased number of nozzles, offset nozzle patterns and groupings of nozzles, lower nozzle flow rates, and higher nozzle back pressures, provide improved processing results. The improved spray system may be provided as a retrofit kit.