Patents by Inventor Marvin Brad Clevenger

Marvin Brad Clevenger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8263855
    Abstract: Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or “turning on” the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: September 11, 2012
    Assignee: Emcore Solar Power, Inc.
    Inventors: Paul R. Sharps, Marvin Brad Clevenger, Mark A Stan
  • Publication number: 20100224239
    Abstract: In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or “turning on” the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.
    Type: Application
    Filed: May 7, 2010
    Publication date: September 9, 2010
    Applicant: Emcore Corporation
    Inventors: Paul R. Sharps, Marvin Brad Clevenger, Mark A. Stan
  • Publication number: 20040149331
    Abstract: Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or “turning on” the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.
    Type: Application
    Filed: November 26, 2003
    Publication date: August 5, 2004
    Inventors: Paul R. Sharps, Marvin Brad Clevenger, Mark A. Stan
  • Patent number: 6680432
    Abstract: Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or “turning on” the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.
    Type: Grant
    Filed: October 24, 2001
    Date of Patent: January 20, 2004
    Assignee: Emcore Corporation
    Inventors: Paul R. Sharps, Marvin Brad Clevenger, Mark A. Stan
  • Publication number: 20030075215
    Abstract: Apparatus and Method for Optimizing the Efficiency of a Bypass Diode in Solar Cells. In a preferred embodiment, a layer of TiAu is placed in an etch in a solar cell with a contact at a doped layer of GaAs. Electric current is conducted through a diode and away from the main cell by passing through the contact point at the GaAs and traversing a lateral conduction layer. These means of activating, or “turning on” the diode, and passing the current through the circuit results in greater efficiencies than in prior art devices. The diode is created during the manufacture of the other layers of the cell and does not require additional manufacturing.
    Type: Application
    Filed: October 24, 2001
    Publication date: April 24, 2003
    Inventors: Paul R. Sharps, Marvin Brad Clevenger, Mark A. Stan