Abstract: A structure includes a first gate structure spaced from a second gate structure in a field effect transistor (FET) area of a substrate. A polysilicon resistor is in a space between the first gate structure and the second gate structure. The polysilicon resistor has a lower surface that is farther from the substrate than lower surfaces of the polysilicon bodies of the first and second gate structures. The polysilicon resistor may have a different polarity dopant compared to at least one of the polysilicon bodies of the first and second gate structures.

Abstract: A system and method for disassembling a multiple contact probe head including a plurality of contact probes positioned by a first die at a first end of the plurality of probes and a second die at a second end of the plurality of probes, are provided. The system may include a manifold configured to sealingly receive an opposing side of the first die from the second die; and a vacuum source operatively coupled to the manifold to apply a vacuum to an interior of the manifold applying a force to the plurality of contact probes in position in the first die across. Where the probes include a paramagnetic material, a magnetic source may be employed to hold the probes during disassembly.

Abstract: A system and method for disassembling a multiple contact probe head including a plurality of contact probes positioned by a first die at a first end of the plurality of probes and a second die at a second end of the plurality of probes, are provided. The system may include a manifold configured to sealingly receive an opposing side of the first die from the second die; and a vacuum source operatively coupled to the manifold to apply a vacuum to an interior of the manifold applying a force to the plurality of contact probes in position in the first die across. Where the probes include a paramagnetic material, a magnetic source may be employed to hold the probes during disassembly.