Patents by Inventor Marvin J. Weber

Marvin J. Weber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Codoped direct-gap semiconductor scintillators
    Patent number: 7404913
    Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
    Type: Grant
    Filed: May 11, 2006
    Date of Patent: July 29, 2008
    Assignee: The Regents of the University of California
    Inventors: Stephen Edward Derenzo, Edith Bourret-Courchesne, Marvin J. Weber, Mattias K. Klintenberg
  • Codoped direct-gap semiconductor scintillators
    Patent number: 7048872
    Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
    Type: Grant
    Filed: September 15, 2003
    Date of Patent: May 23, 2006
    Assignee: The Regents of the University of California
    Inventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Marvin J. Weber, Mattias K. Klintenberg
  • Codoped direct-gap semiconductor scintillators
    Publication number: 20040108492
    Abstract: Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to convert the semiconductor to a fast, high luminosity scintillator. The codopant scheme is based on dopant band to dopant trap recombination. One dopant provides a significant concentration of carriers of one type (electrons or holes) and the other dopant traps carriers of the other type. Examples include CdS:In,Te; CdS:In,Ag; CdS:In,Na; ZnO:Ga,P; ZnO:Ga,N; ZnO:Ga,S; and GaN:Ge,Mg.
    Type: Application
    Filed: September 15, 2003
    Publication date: June 10, 2004
    Inventors: Stephen E. Derenzo, Edith Bourret-Courchesne, Marvin J. Weber, Mattias K. Klintenberg
  • Tunable, rare earth-doped solid state lasers
    Patent number: 4233570
    Abstract: Laser apparatus comprising combinations of an excimer pump laser and a rare earth-doped solid matrix, utilizing the 5d-4f radiative transition in a rare earth ion to produce visible and ultra-violet laser radiation with high overall efficiency in selected cases and relatively long radiative lifetimes.
    Type: Grant
    Filed: January 11, 1978
    Date of Patent: November 11, 1980
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: John L. Emmett, Ralph R. Jacobs, William F. Krupke, Marvin J. Weber
  • Coupled ion eye-safe laser material
    Patent number: 3956170
    Abstract: A coupled ion laser operating at a frequency determined by the energy levels characteristic of the coupling of a lanthanide or actinide group ion with an iron group ion in an orthoaluminate material, such as yttrium orthoaluminate, is described in which low threshold high efficiency starting operation at predetermined frequencies in the region of eye safety is provided.
    Type: Grant
    Filed: July 1, 1974
    Date of Patent: May 11, 1976
    Assignee: Raytheon Company
    Inventor: Marvin J. Weber