Abstract: A method of plating substrates may include receiving characteristics of a plating chamber and characteristics of a substrate to be placed in the plating chamber to be provided as inputs to a trained model. An inference operation using the trained model may be performed to generate a recipe for the plating chamber. The recipe may include characteristics of a forward plating current and characteristics of a reverse de-plating current that may be applied in order to add and remove metal to maintain co-planarity and pillar quality. The plating operation may be performed on the substrate using the recipe that was output from the trained model to cause a current to be applied to the plating liquid in the plating chamber to deposit a metal on exposed portions of the substrate, wherein the current comprises alternating cycles of the forward plating current; and the reverse de-plating current.

Abstract: A wafer-to-wafer assembly, including a first wafer having a dielectric, the dielectric having a first side and a second side, opposite the first side, at least one opening etched into first side of the dielectric, a plug seed layer disposed on the first side of the dielectric, a plug disposed in the at least one opening, a first thin layer deposited over the plug, and a second thin layer deposited over the first thin layer. The first thin layer, the second thin layer, or both the first thin layer and the second thin layer is deposited with electroless deposition. Further, a method of wafer-to-wafer bonding with the wafer-to-wafer assembly.

Abstract: In one embodiment, an electroplating cell for depositing a metal onto a surface of a substrate includes an electroplating chamber configured to receive an electrolyte containing metal ions and a substrate having a surface disposed to contact the electrolyte, wherein the surface of the substrate is configured to serve as a cathode and wherein the surface of the substrate includes an anomaly region at or near the outer perimeter of the surface of the substrate, an anode disposed in the electrolyte chamber, a shielding device disposed between the cathode and the anode to shield the anomaly section, an oscillator configured to impart a relative oscillation between the cathode and the shielding device, and a power source to cause an electric field between the anode and the cathode.

Abstract: Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.

Abstract: Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Abstract: Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

Abstract: Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Abstract: Exemplary methods of electroplating may include forming a first mask layer on a semiconductor substrate. The methods may include forming a seed layer overlying the first mask layer. The methods may include forming a second mask layer overlying the seed layer. The methods may include plating an amount of metal on the semiconductor substrate. A portion of the metal may plate over the first mask layer.

Abstract: Exemplary methods of electroplating may include delivering a current from a power supply through a plating bath of an electroplating chamber for a first period of time. The current delivered may be or include a pulsed current at a duty cycle of less than or about 50%. The methods may include plating a first amount of metal on a substrate within the plating bath. The substrate may define a via within the substrate. The methods may include, subsequent the first period of time, transitioning the power supply to a continuous DC current delivery for a second period of time. The methods may include plating a second amount of metal on the substrate.

Abstract: Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized fluid in a divergent spray pattern such that the substrate surface is cleansed when impinged by spray from the at least one spray nozzle, wherein the at least one spray nozzle sprays the atomized fluid at a pressure of approximately 30 psi to approximately 2500 psi.

Abstract: Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The system may include a catholyte tank fluidly coupled with the first bath of the two-bath electroplating chamber. The system may also include a contaminant retrieval system configured to remove contaminant ions from the catholyte.

Abstract: In one embodiment, an electroplating cell for depositing a metal onto a surface of a substrate includes an electroplating chamber configured to receive an electrolyte containing metal ions and a substrate having a surface disposed to contact the electrolyte, wherein the surface of the substrate is configured to serve as a cathode and wherein the surface of the substrate includes an anomaly region at or near the outer perimeter of the surface of the substrate, an anode disposed in the electrolyte chamber, a shielding device disposed between the cathode and the anode to shield the anomaly section, an oscillator configured to impart a relative oscillation between the cathode and the shielding device, and a power source to cause an electric field between the anode and the cathode.

Abstract: In accordance with one embodiment of the present disclosure, a method of forming a metal feature includes etching a portion of a first metal layer using a first etching chemistry, and etching a portion of a barrier layer using a second etching chemistry to achieve a barrier layer undercut of less than or equal to 2 times the thickness of the barrier layer.

Abstract: Processes and systems for electrochemical deposition of a multi-component solder by processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids.

Abstract: Processes and systems for electrochemical deposition of a multi-component solder by processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids.

Abstract: A system and method for characterizing a surface are disclosed. The system includes a light source and source optics which direct a beam of light toward the surface. A first optical integrating device is positioned and configured to receive a first portion of the scattered light which corresponds to a first range of spatial frequencies. A second optical integrating device is positioned and configured to receive a second portion of the scattered light corresponding to a second range of spatial frequencies. In one embodiment, an integrating sphere is employed as the first optical integrating device. The sphere includes a sampling aperture which is surrounded by a light absorption region on the interior of the sphere. Total integrated scatter data is generated for each range of spatial frequencies and is used to approximate the spectral scatter function of the surface. RMS roughness is then approximated for any range of spatial frequencies.

Abstract: A system and method for characterizing a surface are disclosed. The system includes a light source and source optics which direct a beam of light toward the surface. A first optical integrating device is positioned and configured to receive a first portion of the scattered light which corresponds to a first range of spatial frequencies. A second optical integrating device is positioned and configured to receive a second portion of the scattered light corresponding to a second range of spatial frequencies. In one embodiment, an integrating sphere is employed as the first optical integrating device. The sphere includes a sampling aperture which is surrounded by a light absorption region on the interior of the sphere. Total integrated scatter data is generated for each range of spatial frequencies and is used to approximate the spectral scatter function of the surface. RMS roughness is then approximated for any range of spatial frequencies.