Abstract: Aspects of the present invention relate to ion implantation systems that make use of a vapor compression cooling system. In one embodiment, a thermal controller in the vapor compression system sends refrigeration fluid though a compressor and a condenser according to an ideal vapor compression cycle to help limit or prevent undesired heating of a workpiece during implantation, or to actively cool the workpiece.

Abstract: An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece.

Abstract: An electrostatic clamp (ESC), system, and method for clamping a workpiece is provided. A clamping plate of the ESC has central disk and an annulus encircling the central disk, wherein the central disk is recessed from the annulus by a gap distance, therein defining a volume. Backside gas delivery apertures are positioned proximate to an interface between the annulus and the central disk. A first voltage to a first electrode of the annulus clamps a peripheral region of the workpiece to a first layer. A second voltage to a second electrode of the central disk generally compensates for a pressure of a backside gas within the volume. The ESC can be formed of J-R- or Coulombic-type materials. A cooling plate associated with the clamping plate further provides cooling by one or more cooling channels configured to route a cooling fluid therethrough.

Abstract: One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.

Abstract: The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.

Abstract: The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®.

Abstract: An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece.

Abstract: A combination load lock apparatus is provided, wherein a chamber is coupled to two or more valves in selective fluid communication with two or more respective volumes. A support member for supporting a workpiece is disposed within an interior portion of the chamber, wherein a translation apparatus is operably coupled thereto. The translation apparatus is operable to rotate and/or translate the workpiece on the support member about and/or along a first axis, wherein a detection apparatus associated with the chamber is operable to detect one or more characteristics of the workpiece during the rotation and/or translation thereof. The workpiece may be further rotated in a predetermined manner based on the one or more detected characteristics. A recess is further defined in the interior portion of the chamber, wherein the translation apparatus is operable to translate the workpiece into and out of the recess to reduce particulate contamination thereon.

Abstract: The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.

Abstract: Aspects of the present invention relate to ion implantation systems that make use of a vapor compression cooling system. In one embodiment, a thermal controller in the vapor compression system sends refrigeration fluid though a compressor and a condenser according to an ideal vapor compression cycle to help limit or prevent undesired heating of a workpiece during implantation, or to actively cool the workpiece.

Abstract: The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®.

Abstract: One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.

Abstract: An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece.

Abstract: An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece.

Abstract: An electrostatic clamp (ESC), system, and method for clamping a workpiece is provided. A clamping plate of the ESC has central disk and an annulus encircling the central disk, wherein the central disk is recessed from the annulus by a gap distance, therein defining a volume. Backside gas delivery apertures are positioned proximate to an interface between the annulus and the central disk. A first voltage to a first electrode of the annulus clamps a peripheral region of the workpiece to a first layer. A second voltage to a second electrode of the central disk generally compensates for a pressure of a backside gas within the volume. The ESC can be formed of J-R- or Coulombic-type materials. A cooling plate associated with the clamping plate further provides cooling by one or more cooling channels configured to route a cooling fluid therethrough.

Abstract: An ion implanter is provided having an ion beam generator for generating an ion beam, a platen for holding a workpiece, such as a semiconductor wafer, and a tilt mechanism for tilting the platen and the wafer with respect to the ion beam. A scan controller mechanically moves the wafer and the platen relative to the ion beam so that the motion of the wafer and the platen is tangential, i.e. parallel, to the wafer surface. As a result, the ion beam intersects the wafer surface at a fixed position along the beamline as the wafer is scanned. The size and shape of the ion beam are thereby constant over all areas of the wafer surface during the implant for increasing implant uniformity.

Abstract: A charge exchange device, typically used in an ion beam accelerator, includes a charge exchange tube defining a charge exchange chamber and beam ports for allowing an ion beam to enter and exit the charge exchange tube, a containment tube mounted external to the charge exchange tube, the containment tube having an entrance port for a charge exchange material, and at least one intermediate tube mounted between the charge exchange tube and the containment tube. The charge exchange tube and the at least one intermediate tube have at least one set of flow ports that are aligned on opposite sides of the charge exchange chamber to permit columnated flow of the charge exchange material into and through the charge exchange chamber. Leakage of the charge exchange material through the beam ports is reduced in comparison with prior art charge exchange devices.