Abstract: Improved high quality gate dielectrics and methods of preparing such dielectrics are provided. Preferred dielectrics comprise a rare earth doped dielectric such as silicon dioxide or silicon oxynitride. In particular, cerium doped silicon dioxide shows an unexpectedly high charge-to-breakdown QBD, believed to be due to conversion of excess hot electron energy as photons, which reduces deleterious hot electron effects such as creation of traps or other damage. Rare earth doped dielectrics therefore have particular application as gate dielectrics or gate insulators for semiconductor devices such as floating gate MOSFETs, as used in as flash memories, which rely on electron injection and charge transfer and storage.

Abstract: Improved high quality gate dielectrics and methods of preparing such dielectrics are provided. Preferred dielectrics comprise a rare earth doped dielectric such as silicon dioxide or silicon oxynitride. In particular, cerium doped silicon dioxide shows an unexpectedly high charge-to-breakdown QBD, believed to be due to conversion of excess hot electron energy as photons, which reduces deleterious hot electron effects such as creation of traps or other damage. Rare earth doped dielectrics therefore have particular application as gate dielectrics or gate insulators for semiconductor devices such as floating gate MOSFETs, as used in as flash memories, which rely on electron injection and charge transfer and storage.

Abstract: An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.