Abstract: This invention provides a conductive paste and a method for producing a TOPCon solar cell, by which a TOPCon solar cell can be produced by a simple method, and additionally, a TOPCon solar cell can be constructed with excellent conversion efficiency. Specifically, the invention provides a conductive paste for use as a back electrode for TOPCon solar cells, the conductive paste comprising aluminum-silicon alloy particles, an organic vehicle, and a glass powder, the aluminum-silicon alloy particles having a silicon concentration of 25 wt % or more and 40 wt % or less.

Abstract: The present invention provides a paste composition that is capable of forming a germanium compound layer on a germanium substrate safely and easily, and that is capable of forming a uniform germanium compound layer. The paste composition for forming a germanium compound layer contains (A) tin and (B) at least one metal selected from the group consisting of silicon and aluminum, wherein the content of the at least one metal selected from the group consisting of silicon and aluminum (B) is 1 part by mass or more and 15000 parts by mass or less, per 100 parts by mass of the tin (A).

Abstract: The present invention provides an aluminum paste for solar cells in which a reduction in conversion efficiency of solar cells is suppressed in spite of the presence of silicon. Specifically, the present invention provides an aluminum paste for solar cells, containing aluminum, silicon, and strontium, wherein when the total mass of the aluminum, silicon, and strontium is defined as 100 mass %, the content of the silicon is 1 mass % or more and 60 mass % or less, the content of the strontium is 0.001 mass % or more and 10 mass % or less, and the remainder is the aluminum.

Abstract: A method for producing a back-contact solar cell, includes forming an oxide film on a back surface of a crystalline silicon substrate; forming a silicon thin film layer on an exposed surface of the oxide film; partially forming an n+ layer in the silicon thin film layer by ion implantation using a mechanical hard mask and activation annealing; forming a passivation film on each of both surfaces of the crystalline silicon substrate having the oxide film, the silicon thin film layer, and the n+ layer; and removing part of one or more regions of the passivation film formed on the back-surface side of the crystalline silicon substrate, the one or more regions not covering the n+ layer, and forming one or more aluminum electrodes on the exposed silicon thin film layer, in the stated order.

Abstract: This invention provides a conductive paste and a method for producing a TOPCon solar cell, by which a TOPCon solar cell can be produced by a simple method, and additionally, a TOPCon solar cell can be constructed with excellent conversion efficiency. Specifically, the invention provides a conductive paste for use as a back electrode for TOPCon solar cells, the conductive paste comprising aluminum-silicon alloy particles, an organic vehicle, and a glass powder, the aluminum-silicon alloy particles having a silicon concentration of 25 wt % or more and 40 wt % or less.

Abstract: This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

Abstract: This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.

Abstract: Provided is a paste composition that enables the formation of a diffusion layer with a high concentration of n-type dopant element on a semiconductor substrate in a simple manner. The paste composition is intended to form a film on a semiconductor substrate. The paste composition contains an aluminum powder, a compound containing an n-type dopant element, a resin, and a solvent. The n-type dopant element is one, two, or more elements selected from the group consisting of phosphorus, antimony, arsenic, and bismuth. The content of the n-type dopant element in the n-type dopant element-containing compound is 1.5 parts by mass or more and 1000 parts by mass or less, per 100 parts by mass of aluminum contained in the aluminum powder.

Abstract: It is an object of the present invention to provide aluminum-containing silicon for n-type solar cells. It further provides a method of producing phosphorous-doped silicon refined form aluminum-containing silicone from an economical point of view. It provides silicon for n-type solar cells containing aluminum at a mass concentration of from 0.001 to 1.0 ppm and phosphorous at a mass concentration of from 0.0011 to 1.1 ppm, and having a mass concentration ratio of phosphorous to aluminum of 1.1 or greater. It further provides a method of producing phosphorous-doped silicon, including: preparing a melted mixture containing aluminum, phosphorous, and silicon, by heating and melting aluminum-containing silicon to obtain a melted product and adding phosphorous to the obtained melted product, or by adding phosphorous to aluminum-containing silicon to obtain a mixture and heating and melting the obtained mixture; and then solidifying the melted mixture in a mold under a temperature gradient in one direction.