Patents by Inventor Mary A. Whisenant

Mary A. Whisenant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making highly doped surface layer for negative electron affinity devices
    Patent number: 5354694
    Abstract: A negative electron affinity device has acceptor dopant concentration increased proximate the emitter face of the III-V semiconductor layer and within the depletion zone effected by an overlying CsO negative electron affinity coating. Methods to accomplish dopant concentration include diffusion, ion implantation and doping during crystal growth.
    Type: Grant
    Filed: June 18, 1993
    Date of Patent: October 11, 1994
    Assignee: ITT Corporation
    Inventors: Robert J. Field, Michael E. Givens, Mary A. Whisenant