Patents by Inventor Mary Alyssa Drummond Roby
Mary Alyssa Drummond Roby has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220212919Abstract: A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.Type: ApplicationFiled: June 30, 2021Publication date: July 7, 2022Inventors: Jennifer Lynne HOLM, Simon Joshua JACOBS, Mary Alyssa Drummond ROBY, Kathryn Anne SCHUCK, Kelly Jay TAYLOR
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Patent number: 10319899Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: GrantFiled: August 4, 2017Date of Patent: June 11, 2019Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
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Patent number: 9939710Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.Type: GrantFiled: June 24, 2016Date of Patent: April 10, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, Nayeemuddin Mohammed, YungShan Chang
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Publication number: 20170338401Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: ApplicationFiled: August 4, 2017Publication date: November 23, 2017Inventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
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Patent number: 9755139Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: GrantFiled: June 13, 2015Date of Patent: September 5, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
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Publication number: 20160313627Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.Type: ApplicationFiled: June 24, 2016Publication date: October 27, 2016Inventors: Neng Jiang, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, Nayeemuddin Mohammed, YungShan Chang
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Patent number: 9405089Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.Type: GrantFiled: November 5, 2014Date of Patent: August 2, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, Nayeemuddin Mohammed, YungShan Chang
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Patent number: 9304283Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.Type: GrantFiled: November 5, 2014Date of Patent: April 5, 2016Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Joel Soman, Neng Jiang, Scott Summerfelt, Thomas Warren Lassiter, Nayeemuddin Mohammed, Mary Alyssa Drummond Roby
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Publication number: 20150380637Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.Type: ApplicationFiled: June 13, 2015Publication date: December 31, 2015Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Neng Jiang, Xin Li, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, YungShan Chang
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Publication number: 20150380635Abstract: A microelectronic device containing a piezoelectric component is formed sputtering an adhesion layer of titanium on a substrate by an ionized metal plasma (IMP) process. The adhesion layer is oxidized so that at least a portion of the titanium is converted to a layer of substantially stoichiometric titanium dioxide (TiO2) at a top surface of the adhesion layer. A layer of platinum is formed on the titanium dioxide of the adhesion layer; the layer of platinum has a (111) crystal orientation and an X-ray rocking curve FWHM value of less than 3 degrees. A layer of piezoelectric material is formed on the layer of platinum. The piezoelectric material may include lead zirconium titanate.Type: ApplicationFiled: June 9, 2015Publication date: December 31, 2015Applicant: Texas Instruments IncorporatedInventors: Bhaskar Srinivasan, Sarah Emily Treece, YungShan Chang, Ollen Harvey Mullis, Mary Alyssa Drummond Roby
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Publication number: 20150338604Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.Type: ApplicationFiled: November 5, 2014Publication date: November 26, 2015Inventors: Joel Soman, Neng Jiang, Scott Summerfelt, Thomas Warren Lassiter, Nayeemuddin Mohammed, Mary Alyssa Drummond Roby
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Publication number: 20150340245Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.Type: ApplicationFiled: November 5, 2014Publication date: November 26, 2015Inventors: Neng Jiang, Joel Soman, Thomas Warren Lassiter, Mary Alyssa Drummond Roby, Nayeemuddin Mohammed, YungShan Chang