Patents by Inventor Mary Elizabeth Rothwell

Mary Elizabeth Rothwell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6890599
    Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.
    Type: Grant
    Filed: June 13, 2003
    Date of Patent: May 10, 2005
    Assignee: Intellectual Business Machines Corporation
    Inventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
  • Publication number: 20030211341
    Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.
    Type: Application
    Filed: June 13, 2003
    Publication date: November 13, 2003
    Inventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
  • Patent number: 6632536
    Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.
    Type: Grant
    Filed: December 28, 2000
    Date of Patent: October 14, 2003
    Assignee: International Business Machines Corporation
    Inventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
  • Publication number: 20030127002
    Abstract: A layered structure and process for a microcontact printing stamp has individual layers chosen to impart particular properties such as one layer chosen for surface properties and another layer chosen for bulk mechanical properties. The invention is fabricated through having a first layer with coatable properties and a subsequent layer with injectable properties resulting in a layered structure wherein the layer at the surface has optimized surface properties and is positioned on an underlying layer with carefully chosen bulk mechanical properties, and other unique functional properties can be imparted through an intermediate layer. A fabrication process is provided that employs a coating capability for one portion, an injection capability for another property and a porosity property for still another portion.
    Type: Application
    Filed: January 4, 2002
    Publication date: July 10, 2003
    Inventors: Gareth Geoffrey Hougham, Mary Elizabeth Rothwell, Ronald Wayne Nunes
  • Publication number: 20020084252
    Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.
    Type: Application
    Filed: December 28, 2000
    Publication date: July 4, 2002
    Inventors: Stephen L. Buchwalter, Gareth Geoffrey Hougham, Kang-Wook Lee, John J. Ritsko, Mary Elizabeth Rothwell, Peter M. Fryer
  • Patent number: 6380101
    Abstract: Microcontact printing to pattern a self-assembled monolayer (SAM) of an alkanephosphonic acid on a film of indium zinc oxide (IZO). The SAM is robust enough to protect the undelying IZO from wet chemical etching, and thus defines a pattern of IZO on the substrate. In the microcontact printing process, a patterned, elastomeric stamp is inked with a solution of octadecylphosphonic acid and brought into conformal contact with the IZO surface. A SAM of alkanesulfonic acid forms where the stamp and the surface make contact; the rest remains underivatized. The stamp is then removed from the surface. Etching the sample in aqueous oxalic acid removes the unprotected areas, while the areas protected by the SAM remain in place.
    Type: Grant
    Filed: April 18, 2000
    Date of Patent: April 30, 2002
    Assignee: International Business Machines Corporation
    Inventors: Tricia L. Breen, Peter M. Fryer, Ronald Wayne Nunes, Mary Elizabeth Rothwell