Abstract: A sensor having a distal end and an intermediate region adjacent to the distal end is provided. The sensor includes an insulator base substrate, sensor electrodes over the insulator base substrate, an electrode lead pattern over the insulator base substrate, wherein the electrode lead pattern includes electrode leads configured for contact with the sensor electrodes, and wherein the electrode leads extend completely across the intermediate region in a longitudinal direction, and a structural backing layer over the electrode lead pattern and insulator base substrate; wherein a side edge of the structural backing layer over the electrode lead pattern extends completely across the structural backing layer in the longitudinal direction.

Abstract: Sensors and methods for manufacturing sensors are provided. An exemplary method for manufacturing a sensor includes forming an electrode lead pattern over an insulator base substrate. Further, the method includes forming a structural backing layer over the electrode lead pattern and insulator base substrate. Also, the method includes performing a cutting process to cut through the structural backing layer to form a structural backing over the electrode lead pattern.

Abstract: Sensors and methods for manufacturing sensors are provided. An exemplary method for manufacturing a sensor includes forming an electrode lead pattern over an insulator base substrate. Further, the method includes forming a structural backing layer over the electrode lead pattern and insulator base substrate. Also, the method includes performing a cutting process to cut through the structural backing layer to form a structural backing over the electrode lead pattern.

Abstract: Apparatus and methods for end point detection during the plasma etching of integrated circuit wafers. Etching is conducted in a chamber subjected to the vacuum of a pump drawing at a constant volumetric gas flow rate. The etchant gases entering the chamber are regulated by a controller responsive to a feedback loop sensing pressures within the chamber. Changes in the chamber's chemical composition, which occur in time proximity to the end point of etching, affect the pressure and are detected as variations in the gas flow rates. Empirical results confirm the distinctiveness and repeatability which characterize the flow variations at the end point of etching.