Abstract: The invention provides a polishing pad suitable for planarizing semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of a polypropylene glycol and a toluene diisocyanate to form an isocyanate-terminated reaction product. The toluene diisocyanate has less than 5 weight percent aliphatic isocyanate; and the isocyanate-terminated reaction product having 5.55 to 5.85 weight percent unreacted NCO. The isocyanate-terminated reaction product being cured with a 4,4?-methylene-bis(3-chloro-2,6-diethylaniline) curative agent. The non-porous cured product having a tan delta of 0.04 to 0.10, a Young's modulus of 140 to 240 MPa and a Shore D hardness of 44 to 56.

Abstract: The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten. The polishing pad includes a polymeric matrix; and the polymeric matrix being a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol; and the mixture of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 weight percent; and the toluene diisocyanate is 15 to 35 weight percent total monomer or partially reacted toluene diisocyanate monomer.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. The polishing pad includes a polishing layer having a polyurethane window. The polyurethane window has a cross-linked structure formed with an aliphatic or cycloaliphatic isocyanate and a polyol in a prepolymer mixture. The prepolymer mixture is reacted with a chain extender having OH or NH2 groups and having an OH or NH2 to unreacted NCO stoichiometry less than 95%. The polyurethane window has a time dependent strain less than or equal to 0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 140 minutes, a Shore D hardness of 45 to 90 and an optical double pass transmission of at least 15% at a wavelength of 400 nm for a sample thickness of 1.3 mm.

Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.

Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.

Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ?0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ?15% at a wavelength of 380 nm for a window thickness of 1.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ?0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ?15% at a wavelength of 380 nm for a window thickness of 1.

Abstract: Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identification feature identifies the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads. Also provided is a method of making such chemical mechanical polishing pads and for using them to polish a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Abstract: Chemical mechanical polishing pads having a polishing layer with a polishing surface adapted for polishing a substrate are provided, wherein the polishing layer has a unique integral identification feature; wherein the unique integral identification feature is non-polish active, wherein the unique integral identification feature comprises at least two visually distinct characteristics, wherein at least one of the at least two visually distinct indicia is a non-color based indicia, wherein one of the at least two visually distinct indicia is a color based indicia, and wherein the at least two visually distinct characteristics are selected to uniquely identify the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provided is a method of making such polishing layers and for using them to polish a substrate.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. The polishing pad includes a polishing layer having a polyurethane window. The polyurethane window has a cross-linked structure formed with an aliphatic or cycloaliphatic isocyanate and a polyol in a prepolymer mixture. The prepolymer mixture is reacted with a chain extender having OH or NH2 groups and having an OH or NH2 to unreacted NCO stoichiometry less than 95%. The polyurethane window has a time dependent strain less than or equal to 0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 140 minutes, a Shore D hardness of 45 to 90 and an optical double pass transmission of at least 15% at a wavelength of 400 nm for a sample thickness of 1.3 mm.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.

Abstract: The polishing pad is suitable for polishing patterned semiconductor substrates containing at least one of copper, dielectric, barrier and tungsten. The polishing pad includes a polymeric matrix; and the polymeric matrix being a polyurethane reaction product of a polyol blend, a polyamine or polyamine mixture and toluene diisocyanate. The polyol blend is a mixture of 15 to 77 weight percent total polypropylene glycol and polytetramethylene ether glycol; and the mixture of polypropylene glycol and polytetramethylene ether glycol having a weight ratio of the polypropylene glycol to the polytetramethylene ether glycol from a 20 to 1 ratio to a 1 to 20 ratio. The polyamine or polyamine mixture is 8 to 50 weight percent; and the toluene diisocyanate is 15 to 35 weight percent total monomer or partially reacted toluene diisocyanate monomer.

Abstract: A chemical mechanical polishing pad having a polishing layer with an integral window and a polishing surface adapted for polishing a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate, wherein the formulation of the integral window provides improved defectivity performance during polishing. Also provided is a method of polishing a substrate using the chemical mechanical polishing pad.

Abstract: Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identification feature identifies the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads. Also provided is a method of making such chemical mechanical polishing pads and for using them to polish a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Abstract: Chemical mechanical polishing pads having a polishing layer with a polishing surface adapted for polishing a substrate are provided, wherein the polishing layer has a unique integral identification feature; wherein the unique integral identification feature is non-polish active, wherein the unique integral identification feature comprises at least two visually distinct characteristics, wherein at least one of the at least two visually distinct indicia is a non-color based indicia, wherein one of the at least two visually distinct indicia is a color based indicia, and wherein the at least two visually distinct characteristics are selected to uniquely identify the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provided is a method of making such polishing layers and for using them to polish a substrate.

Abstract: The polishing pad is for polishing patterned semiconductor substrates. The pad includes a polymeric matrix and hollow polymeric particles within the polymeric matrix. The polymeric matrix is a polyurethane reaction product of a curative agent and an isocyanate-terminated polytetramethylene ether glycol at an NH2 to NCO stoichiometric ratio of 80 to 97 percent. The isocyanate-terminated polytetramethylene ether glycol has an unreacted NCO range of 8.75 to 9.05 weight percent. The hollow polymeric particles having an average diameter of 2 to 50 ?m and a wt %b and densityb of constituents forming the polishing pad as follows: wt ? ? % a * density b density a = wt ? ? % b where densitya equals an average density of 60 g/l, where densityb is an average density of 5 g/l to 500 g/l, where wt %a is 3.25 to 4.25 wt %.

Abstract: Chemical mechanical polishing pads having an electrospun polishing layer are provided, wherein the electrospun polishing layer has a polishing surface that is adapted for polishing a semiconductor substrate. Also provided are methods of making such chemical mechanical polishing pads and for using them to polish semiconductor substrates.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 ?m and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, ?, of 1 to 10 ?m as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, W1/2 that is less than or equal to the value of ?.