Patents by Inventor Mary Kathryn Haas
Mary Kathryn Haas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9061317Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: April 5, 2012Date of Patent: June 23, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louis Vincent, Aaron Scott Lukas, Mary Kathryn Haas
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Patent number: 9018107Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: May 6, 2014Date of Patent: April 28, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Patent number: 8951342Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: November 1, 2011Date of Patent: February 10, 2015Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
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Publication number: 20140242813Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: May 6, 2014Publication date: August 28, 2014Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Patent number: 8753986Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: GrantFiled: December 15, 2010Date of Patent: June 17, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Publication number: 20130247971Abstract: Methods for depositing a passivation layer on a photovoltaic cell are disclosed. Methods include depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. The silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family of Si(OR1)xR2y, or from the family of SiRxHy, silane, and combinations thereof; wherein x+y=4, y?4; R1 is C1-C8 alkyl; R2 is selected from the group consisting of hydrogen, C1-C8 alkyl, and NR*3; R is C1-C8 alkyl or NR*3; wherein R* can be hydrogen or C1-C8 alkyl; C1-C8 alkyl can be linear, branched or cyclic, the ligand can be saturated, unsaturated, or aromatic (for cyclic alkyl). Photovoltaic devices containing the passivation layers are also disclosed.Type: ApplicationFiled: September 11, 2012Publication date: September 26, 2013Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Mary Kathryn Haas, Anupama Mallikarjunan, Robert Gordon Ridgeway, Katherine Anne Hutchison, Michael T Savo
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Publication number: 20130220410Abstract: Deposition methods are disclosed for producing a passivation layer on a photovoltaic cell. Method includes depositing a passivation layer comprising at least a bi-layer further comprising a silicon oxide and a silicon nitride layer. In one aspect, the silicon precursor(s) used for the deposition of the silicon oxide layer or the silicon nitride layer, respectively, is selected from the family SiRxHy or selected from the family SiRxH, silane, and combinations thereof, wherein in SiRxHy x+y=4, y?4 and R may be independently selected from the group consisting of C1-C8 linear alkyl, wherein the ligand may be saturated or unsaturated; C1-C8 branched alkyl, wherein the ligand may be saturated or unsaturated; C1-C8 cyclic alkyl, wherein the ligand may be saturated, unsaturated, or aromatic; and NR*3 wherein R* can be independently hydrogen; or linear, branched, cyclic, saturated, or unsaturated alkyl. Photovoltaic devices containing the passivation layers are also disclosed.Type: ApplicationFiled: August 27, 2012Publication date: August 29, 2013Applicant: Air Products and Chemicals, Inc.Inventors: Mary Kathryn Haas, Anupama Mallikarjunan, Robert Gordon Ridgeway, Katherine Anne Hutchison, Michael T. Savo
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Patent number: 8440099Abstract: A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, at least one polar liquid and a stabilizer selected from the group consisting of a hydroxybenzophenone, a nitroxyl radical based stabilizer and a hydroquinone based stabilizer. A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A method for stabilizing a mixture of unsaturated hydrocarbon-based precursor material with at lease one polar liquid against the polymerization comprises adding to the mixture, a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.Type: GrantFiled: May 28, 2008Date of Patent: May 14, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Steven Gerard Mayorga, Kelly Ann Chandler, Mary Kathryn Haas, Mark Leonard O'Neill, Dino Sinatore
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Publication number: 20130095255Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: April 5, 2012Publication date: April 18, 2013Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
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Publication number: 20120282415Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: November 1, 2011Publication date: November 8, 2012Applicant: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louise Vincent, Aaron Scott Lukas, Mary Kathryn Haas
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Patent number: 8283260Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layType: GrantFiled: August 13, 2009Date of Patent: October 9, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Mary Kathryn Haas, Laura M. Matz, Glenn Michael Mitchell, Aiping Wu, Raymond Nicholas Vrtis, John Giles Langan
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Patent number: 8173213Abstract: A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH??Formula (I) wherein R? through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.Type: GrantFiled: May 21, 2009Date of Patent: May 8, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Steven Gerard Mayorga, Mary Kathryn Haas, Mark Leonard O'Neill, Dino Sinatore
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Publication number: 20110308937Abstract: A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: December 15, 2010Publication date: December 22, 2011Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Mary Kathryn Haas, Raymond Nicholas Vrtis, Laura M. Matz
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Publication number: 20100041234Abstract: A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layType: ApplicationFiled: August 13, 2009Publication date: February 18, 2010Applicant: Air Products and Chemicals, Inc.Inventors: Scott Jeffrey Weigel, Mark Leonard O'Neill, Mary Kathryn Haas, Laura M. Matz, Glenn Michael Mitchell, Aiping Wu, Raymond Nicholas Vrtis, John Giles Langan
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Publication number: 20090297711Abstract: A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH ??Formula (I) wherein R1 through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.Type: ApplicationFiled: May 21, 2009Publication date: December 3, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Steven Gerard Mayorga, Mary Kathryn Haas, Mark Leonard O'Neill, Dino Sinatore
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Publication number: 20090159844Abstract: A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, and a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A stabilized composition consists essentially of unsaturated hydrocarbon-based materials, at least one polar liquid and a stabilizer selected from the group consisting of a hydroxybenzophenone, a nitroxyl radical based stabilizer and a hydroquinone based stabilizer. A method for stabilizing unsaturated hydrocarbon-based precursor material against the polymerization comprises providing a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer. A method for stabilizing a mixture of unsaturated hydrocarbon-based precursor material with at lease one polar liquid against the polymerization comprises adding to the mixture, a stabilizer selected from the group consisting of a hydroxybenzophenone and a nitroxyl radical based stabilizer.Type: ApplicationFiled: May 28, 2008Publication date: June 25, 2009Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Steven Gerard Mayorga, Kelly Ann Chandler, Mary Kathryn Haas, Mark Leonard O'Neill, Dino Sinatore
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Publication number: 20080268177Abstract: A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.Type: ApplicationFiled: May 5, 2008Publication date: October 30, 2008Applicant: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Mark Leonard O'Neill, Jean Louis Vincent, Aaron Scott Lukas, Mary Kathryn Haas