Abstract: The present invention provides a method of forming a chemical mechanical polishing pad comprising providing a polymeric matrix with fluid-filled unexpanded microspheres, curing the polymeric matrix and heating the polymeric matrix and the microspheres to expand the microspheres.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent NCO reaction group; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.

Abstract: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed with an isocyanate-terminated reaction product formed from a prepolymer reaction of a prepolymer polyol and a polyfunctional isocyanate. The isocyanate-terminated reaction product has 4.5 to 8.7 weight percent unreacted NCO; and the isocyanate-terminated reaction product is cured with a curative agent selected from the group comprising curative polyamines, curative polyols, curative alcoholamines and mixtures thereof. The polishing pad contains at least 0.1 volume percent filler or porosity.

Abstract: A polishing pad is useful planarizing semiconductor substrates. The polishing pad comprises a polymeric material having a porosity of at least 0.1 volume percent, a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 l/Pa and a modulus E? at 40° C. and 1 rad/sec of 100 to 400 MPa.