Abstract: Aspects of the present disclosure provide for manufacturing an organic light emitting diode (OLED) by forming two terminals of the OLED on two substrates of the display, and then depositing a plurality of layers of the OLED on one or both of the two terminals to form a first portion and a second portion of the OLED on each substrate. The two portions are joined together to form an assembled OLED. The deposition of the two portions can be stopped with each portion having approximately half of a common layer exposed. The two portions can then be aligned to be joined together and an annealing process can be employed to join together the two parts of the common layer and thereby form the OLED.

Abstract: A thin film transistor comprises a semiconductor layer; first and second dielectric layers disposed on opposite sides of the semiconductor layer; a first metal layer forming first and second terminals on the opposite side of the first dielectric layer from the semiconductor layer, one of said first and second terminals extending through said first dielectric layer into contact with the semiconductor layer, the first and second terminals and the first dielectric layer forming a capacitor; and a second metal layer forming a third terminal on the opposite side of the second dielectric layer from the semiconductor layer. The first and second terminals may be source and drain terminals, and the third terminal may be a gate terminal. The first metal layer may be divided to form the first and second terminals. The third terminal may be shared with one of the first and second terminals.

Abstract: Aspects of the present disclosure provide for manufacturing an organic light emitting diode (OLED) by forming two terminals of the OLED on two substrates of the display, and then depositing a plurality of layers of the OLED on one or both of the two terminals to form a first portion and a second portion of the OLED on each substrate. The two portions are joined together to form an assembled OLED. The deposition of the two portions can be stopped with each portion having approximately half of a common layer exposed. The two portions can then be aligned to be joined together and an annealing process can be employed to join together the two parts of the common layer and thereby form the OLED.

Abstract: Aspects of the present disclosure provide for manufacturing an organic light emitting diode (OLED) by forming two terminals of the OLED on two substrates of the display, and then depositing a plurality of layers of the OLED on one or both of the two terminals to form a first portion and a second portion of the OLED on each substrate. The two portions are joined together to form an assembled OLED. The deposition of the two portions can be stopped with each portion having approximately half of a common layer exposed. The two portions can then be aligned to be joined together and an annealing process can be employed to join together the two parts of the common layer and thereby form the OLED.

Abstract: A thin film transistor comprises a semiconductor layer; first and second dielectric layers disposed on opposite sides of the semiconductor layer; a first metal layer forming first and second terminals on the opposite side of the first dielectric layer from the semiconductor layer, one of said first and second terminals extending through said first dielectric layer into contact with the semiconductor layer, the first and second terminals and the first dielectric layer forming a capacitor; and a second metal layer forming a third terminal on the opposite side of the second dielectric layer from the semiconductor layer. The first and second terminals may be source and drain terminals, and the third terminal may be a gate terminal. The first metal layer may be divided to form the first and second terminals. The third terminal may be shared with one of the first and second terminals.

Abstract: A thin film transistor having a channel region including a nanoconductor layer. The nanoconductor layer can be a dispersed monolayer of nanotubes or nanowires formed of carbon. The thin film transistor generally includes a gate terminal insulated by a dielectric layer. The nanoconductor layer is placed on the dielectric layer and a layer of semiconductor material is developed over the nanoconductor layer to form the channel region of the thin film transistor. A drain terminal and a source terminal are then formed on the semiconductor layer. At low field effect levels, the operation of the thin film transistor is dominated by the semiconductor layer, which provides good leakage current performance. At high field effect levels, the charge transfer characteristics of the channel region are enhanced by the nanoconductor layer such that the effective mobility of the thin film transistor is enhanced.

Abstract: A thin film transistor having a channel region including a nanoconductor layer. The nanoconductor layer can be a dispersed monolayer of nanotubes or nanowires formed of carbon. The thin film transistor generally includes a gate terminal insulated by a dielectric layer. The nanoconductor layer is placed on the dielectric layer and a layer of semiconductor material is developed over the nanoconductor layer to form the channel region of the thin film transistor. A drain terminal and a source terminal are then formed on the semiconductor layer. At low field effect levels, the operation of the thin film transistor is dominated by the semiconductor layer, which provides good leakage current performance. At high field effect levels, the charge transfer characteristics of the channel region are enhanced by the nanoconductor layer such that the effective mobility of the thin film transistor is enhanced.

Abstract: Aspects of the present disclosure provide for manufacturing an organic light emitting diode (OLED) by forming two terminals of the OLED on two substrates of the display, and then depositing a plurality of layers of the OLED on one or both of the two terminals to form a first portion and a second portion of the OLED on each substrate. The two portions are joined together to form an assembled OLED. The deposition of the two portions can be stopped with each portion having approximately half of a common layer exposed. The two portions can then be aligned to be joined together and an annealing process can be employed to join together the two parts of the common layer and thereby form the OLED.