Patents by Inventor Maryam Ziaei-Moayyed

Maryam Ziaei-Moayyed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9090451
    Abstract: A TPoS resonator includes a substrate and a resonator body suspended over the substrate by at least a first pair of fixed supports (e.g., tethers) that attach to first and second ends of the resonator body. The resonator body includes monocrystalline silicon, which has a [100] crystallographic orientation that is offset by ±? degrees relative to a nodal line of the resonator body (e.g., tether-to-tether axis) when the resonator body is operating at a resonant frequency, where a is a real number in a range from about 5 to about 19 and, more preferably, in a range from about 7 to about 17. The resonator may be an extensional-mode resonator and the resonator body may be rectangular-shaped with unequal length and width dimensions.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: July 28, 2015
    Assignee: INTEGRATED DEVICE TECHNOLOGY, INC.
    Inventors: Wanling Pan, Harmeet Bhugra, Maryam Ziaei-Moayyed
  • Patent number: 8525619
    Abstract: A very high-Q, low insertion loss resonator can be achieved by storing many overtone cycles of a lateral acoustic wave (i.e., Lamb wave) in a lithographically defined suspended membrane comprising a low damping resonator material, such as silicon carbide. The high-Q resonator can sets up a Fabry-Perot cavity in a low-damping resonator material using high-reflectivity acoustic end mirrors, which can comprise phononic crystals. The lateral overtone acoustic wave resonator can be electrically transduced by piezoelectric couplers. The resonator Q can be increased without increasing the impedance or insertion loss by storing many cycles or wavelengths in the high-Q resonator material, with much lower damping than the piezoelectric transducer material.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: September 3, 2013
    Assignee: Sandia Corporation
    Inventors: Roy H. Olsson, Ihab F. El-Kady, Maryam Ziaei-Moayyed, Darren W. Branch, Mehmet F. Su, Charles M. Reinke
  • Patent number: 8497747
    Abstract: A microelectromechanical (MEM) filter is disclosed which has a plurality of lattice networks formed on a substrate and electrically connected together in parallel. Each lattice network has a series resonant frequency and a shunt resonant frequency provided by one or more contour-mode resonators in the lattice network. Different types of contour-mode resonators including single input, single output resonators, differential resonators, balun resonators, and ring resonators can be used in MEM filter. The MEM filter can have a center frequency in the range of 10 MHz-10 GHz, with a filter bandwidth of up to about 1% when all of the lattice networks have the same series resonant frequency and the same shunt resonant frequency. The filter bandwidth can be increased up to about 5% by using unique series and shunt resonant frequencies for the lattice networks.
    Type: Grant
    Filed: March 2, 2011
    Date of Patent: July 30, 2013
    Assignee: Sandia Corporation
    Inventors: Kenneth E. Wojciechowski, Roy H. Olsson, III, Maryam Ziaei-Moayyed