Patents by Inventor Maryline Bawedin

Maryline Bawedin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Multilevel memory device
    Patent number: 9019760
    Abstract: A memory device is provided, including a back gate including a first portion of electrically conductive material, a first portion of dielectric material arranged on the back gate, a semiconductor nanobeam arranged on the first portion of dielectric material, a second portion of dielectric material covering the semiconductor nanobeam, a portion of material configured to receive electrons and holes, and configured to store electrical charges and covering the second portion of dielectric material, a third portion of dielectric material covering the portion of material configured to perform storage of electrical charges, and a front gate including a second portion of electrically conductive material covering the third portion of dielectric material.
    Type: Grant
    Filed: November 25, 2011
    Date of Patent: April 28, 2015
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Alexandre Hubert, Maryline Bawedin, Sorin Cristoloveanu, Thomas Ernst
  • Double-gate floating-body memory device
    Patent number: 8391081
    Abstract: A memory device is provided comprising a transistor having a floating body positioned between source and drain regions, the floating body being sandwiched between first and second insulated gates each comprising a gate electrode. A control circuit is arranged to program the state of said floating body to have an accumulation or depletion of majority carriers by applying one of first and second voltage levels between the first gate and at least one of the source and drain regions, and to retain the programmed state of said floating body by applying a third voltage level to the second gate. The voltages are switched over a time duration shorter than 100 ns.
    Type: Grant
    Filed: January 5, 2009
    Date of Patent: March 5, 2013
    Assignee: Centre National de la Recherche Scientifique
    Inventors: Maryline Bawedin, Sorin Ioan Cristoloveanu, Denis Flandre, Christian Renaux, André Crahay
  • MULTILEVEL MEMORY DEVICE
    Publication number: 20120134206
    Abstract: A memory device comprising: a back gate including a first portion of electrically conductive material, a first portion of dielectric material arranged on the back gate, a semiconductor nanobeam arranged on the first portion of dielectric material, a second portion of dielectric material covering the semiconductor nanobeam, a portion of material capable of receiving electrons and holes, and able to perform storage of electrical charges and covering the second portion of dielectric material, a third portion of dielectric material covering the portion of material capable of performing storage of electrical charges, a front gate including a second portion of electrically conductive material covering the third portion of dielectric material.
    Type: Application
    Filed: November 25, 2011
    Publication date: May 31, 2012
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
    Inventors: Alexandre Hubert, Maryline Bawedin, Sorin Cristoloveanu, Thomas Ernst
  • DOUBLE-GATE FLOATING-BODY MEMORY DEVICE
    Publication number: 20110019488
    Abstract: A memory device is provided comprising a transistor having a floating body positioned between source and drain regions, the floating body being sandwiched between first and second insulated gates each comprising a gate electrode. A control circuit is arranged to program the state of said floating body to have an accumulation or depletion of majority carriers by applying one of first and second voltage levels between the first gate and at least one of the source and drain regions, and to retain the programmed state of said floating body by applying a third voltage level to the second gate. The voltages are switched over a time duration shorter than 100 ns.
    Type: Application
    Filed: January 5, 2009
    Publication date: January 27, 2011
    Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Maryline Bawedin, Sorin Ioan Cristoloveanu, Denis Flandre, Christian Renaux, Andre Crahay