Abstract: An infrared radiation (“IR”) focal plane array (“FPA”) imager includes a detector array chip containing pixels having substantially one-hundred percent operability. Each of the pixels contains a plurality of interdigitated sub-detectors, where the sub-detectors are selectively operable to provide for collection of photogenerated minority charges representative of all or substantially all of the IR radiation absorbed by the detector array chip of the FPA imager.

Abstract: An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.

Abstract: An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of the substrate, a first well region of a first conductive type having first and second opposite sides, the first side being arranged adjacent with the front side of the image sensor; and a second well region of a second conductive type, different from the first conductive type and having a deep well region provided adjacent with the second side of the first well region, the transparent conductive coating configured to develop or to receive a first potential and the first well region configured to receive a second potential to substantially deplete a region between the transparent conductive coating and the first well region.

Abstract: Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1-2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1-2 microns to an intrinsic semiconducting blocking region of an impurity band semiconducting device included in a solid state photon detector.