Patents by Inventor Maryse Bafleur

Maryse Bafleur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor switch arrangement and an electronic device
    Patent number: 7916439
    Abstract: A semiconductor switch arrangement comprises a bipolar transistor and a semiconductor power switch having an input node, an output node and a control node for allowing a current path to be formed between the input node and the output node. The bipolar transistor is coupled between the input node and the control node such that upon receiving an electro-static discharge pulse the bipolar transistor allows a current to flow from the input node to the control node upon a predetermined voltage being exceeded at the input node to allow the control node to cause a current to flow from the input node to the output node. Thus, the bipolar transistor device protects the semiconductor switch device, such as an LDMOS device, against ESD, namely protection against power surges of, say, several amperes in less than 1 usec.
    Type: Grant
    Filed: August 3, 2005
    Date of Patent: March 29, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Michel Zecri, Luca Bertolini, Patrice Besse, Maryse Bafleur, Nicolas Nolhier
  • Semiconductor Switch Arrangement and an Electronic Device
    Publication number: 20080246345
    Abstract: A semiconductor switch arrangement (300) comprises a bipolar transistor (302) and a semiconductor power switch (301) having an input node (306), an output node (304) and a control node (305) for allowing a current path to be formed between the input node (306) and the output node (307). The bipolar transistor (302) is coupled between the input node (306) and the control node (305) such that upon receiving an electro-static discharge pulse the bipolar transistor (302) allows a current to flow from the input node (306) to the control node (305) upon a pre-determined voltage being exceeded at the input node (306) to allow the control node (305) to cause a current to flow from the input node (306) to the output node (307). Thus, the bipolar transistor device protects the semiconductor switch device, such as an LDMOS device, against ESD, namely protection against power surges of, say, several amperes in less than 1 usec.
    Type: Application
    Filed: August 3, 2005
    Publication date: October 9, 2008
    Applicants: Freescale Semiconductor, Inc., Le Centre De La Recherche Scientifique
    Inventors: Michel Zecri, Luca Bertolini, Patrice Besse, Maryse Bafleur, Nicolas Nolhier