Abstract: A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate; a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT; a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal; and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit.

Abstract: A capacitive micromachined ultrasonic transducer (cMUT) is constituted by a plurality of transducer elements comprising plural transducer cells that are mutually connected in parallel and comprises: a silicon substrate; a bottom electrode placed on the top surface of the silicon substrate; an upper electrode placed opposite to the bottom electrode and apart therefrom by a prescribed air or vacuum; a membrane for supporting the bottom electrode; and a membrane supporting part for supporting the membrane, wherein the cMUT comprises a third electrode which has an electrical continuity to the bottom electrode and which corresponds to either one of the transducer cells of a prescribed number of the transducer subelement or of the transducer elements, and a fourth electrode which is a ground electrode electrically connected to the bottom electrode.

Abstract: A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate; a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT; a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal; and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit.

Abstract: A capacitive micromachined ultrasonic transducer (cMUT) is constituted by a plurality of transducer elements comprising plural transducer cells that are mutually connected in parallel and comprises: a silicon substrate; a bottom electrode placed on the top surface of the silicon substrate; an upper electrode placed opposite to the bottom electrode and apart therefrom by a prescribed air or vacuum; a membrane for supporting the bottom electrode; and a membrane supporting part for supporting the membrane, wherein the cMUT comprises a third electrode which has an electrical continuity to the bottom electrode and which corresponds to either one of the transducer cells of a prescribed number of the transducer subelement or of the transducer elements, and a fourth electrode which is a ground electrode electrically connected to the bottom electrode.