Abstract: A semiconductor device capable of realizing a capacitative element of which a capacitance value has low bias dependence and of which capacitance density is high without lowering operating voltage is provided. The semiconductor device includes: a semiconductor substrate; a first capacitative element stacked on the semiconductor substrate; and a second capacitative element which is stacked on an opposite side to a side of the semiconductor substrate of the first capacitative element and of which a capacitance value has bias characteristics being opposite to bias characteristics of a capacitance value of the first capacitative element, wherein the first capacitative element and the second capacitative element are connected in parallel.

Abstract: Provided is a semiconductor device capable of improving a capacitance density of a capacitive element without decreasing an operating voltage. The semiconductor device includes: a first semiconductor substrate including a first capacitive element portion including at least one capacitive element; a second semiconductor substrate stacked with respect to the first semiconductor substrate; and a second capacitive element portion formed by a metal bonding portion provided on a bonding surface between the first semiconductor substrate and the second semiconductor substrate. The first and second capacitive element portions are connected to each other in parallel.

Abstract: A solid-state imaging element of the present disclosure includes: a pixel array in which a plurality of unit pixels is arranged in a matrix shape, the plurality of unit pixels each including a photoelectric conversion unit; and an analog-to-digital conversion unit that converts an analog pixel signal into a digital signal, the analog pixel signal being output from each of the plurality of unit pixels of the pixel array. Then, the analog-to-digital conversion unit includes a comparator that includes a differential input unit and an active load of the differential input unit, the differential input unit using, as an input, a prescribed reference signal and the analog pixel signal. At least one transistor that configures the active load includes a plurality of control terminals that controls current. The plurality of control terminals is electrically connected in common.

Abstract: A solid-state imaging element of the present disclosure includes: a pixel array in which a plurality of unit pixels is arranged in a matrix shape, the plurality of unit pixels each including a photoelectric conversion unit; and an analog-to-digital conversion unit that converts an analog pixel signal into a digital signal, the analog pixel signal being output from each of the plurality of unit pixels of the pixel array. Then, the analog-to-digital conversion unit includes a comparator that includes a differential input unit and an active load of the differential input unit, the differential input unit using, as an input, a prescribed reference signal and the analog pixel signal. At least one transistor that configures the active load includes a plurality of control terminals that controls current. The plurality of control terminals is electrically connected in common.

Abstract: Provided is a semiconductor device and a protection element capable of suppressing electrical damage to a MOSFET or the like in a semiconductor substrate. A semiconductor device according to a first aspect of the present technology includes a MOSFET as a protected element formed on a semiconductor substrate and a protection element that suppresses electrical damage to the protected element formed on the semiconductor substrate, in which the protection element includes the semiconductor substrate, one or more layers of well regions formed on the semiconductor substrate, and a diffusion layer formed on the well region. The present technology can be applied to a CMOS image sensor, for example.

Abstract: A MOS field-effect transistor according to the present disclosure includes: an element isolation region that defines an active region; a source region and a drain region formed in the active region; a gate insulating film provided on a channel region between the source region and the drain region; and a gate electrode provided on the gate insulating film, in which the gate electrode has an electrode shape in which a potential at a border between the element isolation region and the active region becomes shallower than a potential at a channel center part.

Abstract: An analog-to-digital converter includes a comparator having paired differential input ends, and a first capacitor and a second capacitor each provided at respective differential input ends. The first capacitor includes a plurality of first sub-capacitors that are coupled side by side with one another, and the second capacitor includes a plurality of second sub-capacitors that are coupled side by side with one another. The plurality of first sub-capacitors and the plurality of second sub-capacitors are mixedly arranged in each column of a plurality of columns.

Abstract: The present technology relates to a semiconductor device and a protection element capable of suppressing electrical damage to a MOSFET or the like in a semiconductor substrate. A semiconductor device according to a first aspect of the present technology includes: a MOSFET as a protected element formed on a semiconductor substrate; and a protection element that suppresses electrical damage to the protected element formed on the semiconductor substrate, in which the protection element includes: the semiconductor substrate; one or more layers of well regions formed on the semiconductor substrate; and a diffusion layer formed on the well region. The present technology can be applied to a CMOS image sensor, for example.

Abstract: An analog-to-digital converter includes a comparator having paired differential input ends, and a first capacitor and a second capacitor each provided at respective differential input ends. The first capacitor includes a plurality of first sub-capacitors that are coupled side by side with one another, and the second capacitor includes a plurality of second sub-capacitors that are coupled side by side with one another. The plurality of first sub-capacitors and the plurality of second sub-capacitors are mixedly arranged in each column of a plurality of columns.

Abstract: An analog-to-digital converter includes a comparator having paired differential input ends, and a first capacitor and a second capacitor each provided at respective differential input ends. The first capacitor includes a plurality of first sub-capacitors that are coupled side by side with one another, and the second capacitor includes a plurality of second sub-capacitors that are coupled side by side with one another. The plurality of first sub-capacitors and the plurality of second sub-capacitors are mixedly arranged in each column of a plurality of columns.

Abstract: A MOS field-effect transistor according to the present disclosure includes: an element isolation region that defines an active region; a source region and a drain region formed in the active region; a gate insulating film provided on a channel region between the source region and the drain region; and a gate electrode provided on the gate insulating film, in which the gate electrode has an electrode shape in which a potential at a border between the element isolation region and the active region becomes shallower than a potential at a channel center part.

Abstract: An analog-to-digital converter includes a comparator having paired differential input ends, and a first capacitor and a second capacitor each provided at respective differential input ends. The first capacitor includes a plurality of first sub-capacitors that are coupled side by side with one another, and the second capacitor includes a plurality of second sub-capacitors that are coupled side by side with one another. The plurality of first sub-capacitors and the plurality of second sub-capacitors are mixedly arranged in each column of a plurality of columns.

Abstract: Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.

Abstract: Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.

Abstract: A device with a plurality of elements separated into groups, each element including an activation terminal, an input terminal and an output terminal, a plurality of first signal lines, and a plurality of second signal lines, where the input terminals of each element in each group are commonly connected to one of the plurality of first signal lines, the input terminals of the different groups are connected to different first signal lines, and the output terminals of the each element in each group are independently connected to a different one of the plurality of second signal lines.

Abstract: A device with a plurality of elements separated into groups, each element including an activation terminal, an input terminal and an output terminal, a plurality of first signal lines, and a plurality of second signal lines, where the input terminals of each element in each group are commonly connected to one of the plurality of first signal lines, the input terminals of the different groups are connected to different first signal lines, and the output terminals of the each element in each group are independently connected to a different one of the plurality of second signal lines.

Abstract: A task is to provide a simple method for obtaining a bipolar transistor being free of current gain dispersion and having a lowered base resistance. The method of the present invention comprises forming a base layer on a semiconductor substrate, and then forming in an insulating film stacked on the base layer a base electrode lead opening and an emitter electrode lead opening at the same time, and subsequently forming a base electrode lead portion and an emitter electrode lead portion in, respectively, the base electrode lead opening and the emitter electrode lead opening.