Abstract: An object of the invention is to control an environment such that both external constraints and human comfort are unconsciously and easily achieved. A behavioral change promoting device according to the invention is connected to a control target device configured to act on an environment of a human, an operation unit configured to receive an operation performed on the control target device by the human, and a sensor configured to acquire a control target measurement value in the environment. The behavioral change promoting device includes: a change speed control unit configured to determine, based on the received operation, a change speed at which the control target measurement value is changed in a non-comfort direction of the human.

Abstract: There is provide a printing apparatus including: a transport section that transports a medium in a first direction; a discharge section that discharges a liquid to the medium transported by the transport section; a signal generation section that outputs a first pulse signal; and a heating section that is provided downstream of the discharge section in the first direction, includes a first heater that generates heat in accordance with a first pulse included in the first pulse signal, and heats the medium, in which the signal generation section adjusts the first pulse in accordance with a heating amount for heating the medium by the heating section.

Abstract: There is provided a printing apparatus including: a transport section that transports a medium in a first direction; a printing section that makes a liquid adhere to the medium transported by the transport section; a heating section provided downstream of the printing section in the first direction, in which the heating section includes a first heater that extends to a first range in a second direction intersecting the first direction and a second range positioned on one side in the second direction from the first range and heats the medium, and a second heater that extends to the first range and a third range positioned on the other side in the second direction from the first range, and heats the medium, and heats the medium by the first heater and the second heater when the printing section made the liquid adhere to the first range on the medium.

Abstract: There is provided a printing apparatus including: a transport section that transports a medium in a first direction; a discharge section that discharges a liquid to the medium transported by the transport section; and a heater that is provided downstream of the discharge section in the first direction, and heats the medium, in which the heater includes a ceramic substrate, a heat generating resistor provided on the ceramic substrate, and a protection section that protects the heat generating resistor.

Abstract: There is provided a printing apparatus including: a transport section that transports a medium in a first direction; a discharge section that discharges a liquid to the medium transported by the transport section; and a heater that is provided downstream of the discharge section in the first direction, and heats the medium, in which the heater includes a ceramic substrate, a heat generating resistor provided on the ceramic substrate, and a protection section that protects the heat generating resistor.

Abstract: There is provide a printing apparatus including: a transport section that transports a medium in a first direction; a discharge section that discharges a liquid to the medium transported by the transport section; a signal generation section that outputs a first pulse signal; and a heating section that is provided downstream of the discharge section in the first direction, includes a first heater that generates heat in accordance with a first pulse included in the first pulse signal, and heats the medium, in which the signal generation section adjusts the first pulse in accordance with a heating amount for heating the medium by the heating section.

Abstract: There is provided a printing apparatus including: a transport section that transports a medium in a first direction; a printing section that makes a liquid adhere to the medium transported by the transport section; a heating section provided downstream of the printing section in the first direction, in which the heating section includes a first heater that extends to a first range in a second direction intersecting the first direction and a second range positioned on one side in the second direction from the first range and heats the medium, and a second heater that extends to the first range and a third range positioned on the other side in the second direction from the first range, and heats the medium, and heats the medium by the first heater and the second heater when the printing section made the liquid adhere to the first range on the medium.

Abstract: A power generating system comprising: a plurality of power generating units coupled in parallel; a power collecting device for collecting electric power output from the plurality of power generating units; and wirings for coupling the plurality of power generating units and the power collecting device. A ratio of a conductor diameter to a predetermined length of each of the wirings is defined as a reference ratio. A value obtained by multiplying the reference ratio, a number of the wirings, and a loss generated by a specific wiring together is subtracted from a value obtained by multiplying a predetermined number of wirings for adjustment by a ratio of a conductor diameter to a length of the specific wiring. A total of the ratios of the conductor diameters to the lengths of the predetermined number of the wirings for adjustment is determined as a value less than the subtracted value.

Abstract: A method for calculating a solar radiation amount is provided, which enables the prediction of a solar radiation amount with consideration also given to the small movement of a cloud that affects a power generation amount generated by a PV array and thereby improves the accuracy of prediction of the power generation amount generated by the PV array. From a measured output value of a solar panel, solar radiation and a temperature parameter are extracted. An output of a PV is calculated from the extracted solar radiation and temperature parameter. The calculated value is correlated with the measured value. A temperature correction coefficient is obtained so that a correlation coefficient is highest, and a solar radiation amount is calculated using the obtained correlation coefficient.

Abstract: A power generating system comprising: a plurality of power generating units coupled in parallel; a power collecting device for collecting electric power output from the plurality of power generating units; and wirings for coupling the plurality of power generating units and the power collecting device. A ratio of a conductor diameter to a predetermined length of each of the wirings is defined as a reference ratio. A value obtained by multiplying the reference ratio, a number of the wirings, and a loss generated by a specific wiring together is subtracted from a value obtained by multiplying a predetermined number of wirings for adjustment by a ratio of a conductor diameter to a length of the specific wiring. A total of the ratios of the conductor diameters to the lengths of the predetermined number of the wirings for adjustment is determined as a value less than the subtracted value.

Abstract: A method for calculating a solar radiation amount is provided, which enables the prediction of a solar radiation amount with consideration also given to the small movement of a cloud that affects a power generation amount generated by a PV array and thereby improves the accuracy of prediction of the power generation amount generated by the PV array. From a measured output value of a solar panel, solar radiation and a temperature parameter are extracted. An output of a PV is calculated from the extracted solar radiation and temperature parameter. The calculated value is correlated with the measured value. A temperature correction coefficient is obtained so that a correlation coefficient is highest, and a solar radiation amount is calculated using the obtained correlation coefficient.

Abstract: In a device having an anode electrode, an organic EL layer, and a cathode electrode formed on a substrate in this order from a main surface side of the substrate, and an encapsulating film provided on the substrate so as to cover the emission layer, the encapsulating film includes a laminated film obtained by alternately laminating buffer films serving as flattening films and barrier films having high moisture barrier property, and the flattening film and the barrier film include a silicon oxynitride film. In the manufacturing process of the device, the buffer film including silicon oxynitride is formed by an optical CVD method using vacuum ultraviolet light, and in this process, radical irradiation by remote plasma is performed during the irradiation of the vacuum ultraviolet light.

Abstract: An organic light emitting diode has a reflection electrode, an organic layer with a luminous point, a transparent electrode, an output-side substrate, and a light scattering layer in contact with the output-side substrate. The light scattering layer is made of a base material and particles contained therein. These particles are higher in refractive index than the base material and the output-side substrate. The luminous point emits light at an emission peak wavelength ? (nm). Letting a height from an interface between the electrode and the organic layer to the luminous point be “a×d” (where d (nm) is the thickness of the organic layer, 0<a<1), the height satisfies: (2m?155/180)?/4/n/cos 35°?a×d?(2m?155/180)?/4/n/cos 50° (where n is the refractive index of the organic layer, and m is an integer larger than or equal to 1).

Abstract: A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.

Abstract: An organic transistor is formed with a low material cost and low manufacturing cost while still providing high performance and a low contact resistance with an organic semiconductor of the transistor. The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, a property of the second metal is used in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.

Abstract: An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

Abstract: In an image display device comprising a display part configured with a plurality of pixels and a peripheral integrated circuit which controls the display part, the display device is provided on a support substrate which has high durability for the impact and the bending, the pixel circuit is configured with an organic semiconductor TFT, the peripheral integrated circuit is configured with a low-temperature poly Si-TFT, this peripheral integrated circuit is provided on a support substrate of the display device being removed the support substrate when being manufactured, and the pixel circuit and the peripheral integrated circuit are connected with the same wire layer.

Abstract: To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.

Abstract: A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.

Abstract: A thin-film transistor includes an insulating substrate, a source electrode, and a drain electrode, disposed over the top of the insulating substrate, a semiconductor layer electrically continuous with the source electrode, and the drain electrode, respectively, a gate dielectric film formed over the top of at least the semiconductor layer; and a gate electrode disposed over the top of the gate dielectric film so as to overlap the semiconductor layer. Further, a first bank insulator is formed so as to overlie the source electrode, a second bank insulator is formed so as to overlie the drain electrode, and the semiconductor layer, the gate dielectric film, and the gate electrode are embedded in a region between the first bank insulator, and the second bank insulator.