Abstract: A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.

Abstract: A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.

Abstract: A heat-treating apparatus is arranged to perform a reforming process and a crystallizing process for tantalum oxide deposited on a semiconductor wafer. The apparatus includes a worktable with a heater incorporated therein. Under the worktable, there is a heat-compensating member formed of a thin plate and having a counter surface facing the bottom surface of the worktable along the periphery. The counter surface is formed of a mirror surface having a surface roughness of Rmax=25 &mgr;m or less. Heat rays and radiant heat are reflected by the counter surface and applied to the periphery of the worktable, thereby compensating the periphery for heat loss.

Abstract: An ozone-processing apparatus for a semiconductor process system includes an airtight process chamber and a lamp chamber, which are partitioned by a window for transmitting ultraviolet rays. A plurality of ultraviolet-ray lamps is arrayed along the window in the lamp chamber. A measurement space is defined between the window and the lamps in the lamp chamber. The lamp chamber is provided with a mount portion to set up a measuring unit therein. The measuring unit includes a sensor to be inserted into the measuring space, for measuring the light quantity of the lamps. The sensor is movable in a direction in which the lamps are arrayed.

Abstract: A thermal processing apparatus for a semi-conductor wafer. A holder is provided within a processing vessel on which the wafer to be processed is placed. Upper and lower heaters are provided above and below the holder in order to heat the wafer. Each of the heaters are attached within heating vessels. A gas supply head supplies a processing gas in a shower form between the upper heater and the holder. The uniformity of the surface temperature of the wafer is improved by heating the wafer from both above and below.

Abstract: While the interior of a reaction vessel is being deaerated by a first vacuum pump, an inert gas is supplied from an upstream side (reaction gas bottle side) of a flow rate control unit (MFC) to a reaction gas supply pipe. Thus, a reaction gas is substituted with the inert gas. A passageway downstream of the MFC is closed and the interior of the pipe is deaerated from the upstream side through a bypass pipe so that a predetermined degree of vacuum is obtained. Thus, the gas substituting efficiency can be improved. The interior of the reaction vessel and the interior of the reaction gas supply pipe are quickly deaerated without an influence of resistance of the MFC. The inert gas substitution process and the deaerating process are repeated for 10 cycles or more.

Abstract: While the interior of a reaction vessel is being deaerated by a first vacuum pump, an inert gas is supplied from an upstream side (reaction gas bottle side) of a flow rate control unit (MFC) to a reaction gas supply pipe. Thus, a reaction gas is substituted with the inert gas. A passageway downstream of the MFC is closed and the interior of the pipe is deaerated from the upstream side through a bypass pipe so that a predetermined degree of vacuum is obtained. Thus, the gas substituting efficiency can be improved. The interior of the reaction vessel and the interior of the reaction gas supply pipe are quickly deaerated without an influence of resistance of the MFC. The inert gas substitution process and the deaerating process are repeated for 10 cycles or more.