Patents by Inventor Masaaki Hirakawa

Masaaki Hirakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240110081
    Abstract: A temporary substrate adhesive according to an embodiment includes a silane coupling agent and a photobase generator, but does not include a resin.
    Type: Application
    Filed: November 29, 2023
    Publication date: April 4, 2024
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaaki HIRAKAWA, Kazushi TATEYAMA
  • Publication number: 20240069671
    Abstract: In general, in one aspect, one or more embodiments relate to an input device that includes a proximity sensing panel including sensor electrodes, and a proximity sensing circuit. The proximity sensing circuit configured to receive an indication of a transition from a first image refresh rate to a second image refresh rate, wherein the first image refresh rate is greater than a beacon signal rate and the second image refresh rate is equal to or lower than the beacon signal rate. The proximity sensing panel is also configured to align transmitting a beacon signal on the proximity sensing panel to a non-refresh period corresponding to the second refresh rate.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Inventors: Masaaki Shiomura, Hirokazu Hatayama, Makoto Takeuchi, Takayuki Noto, Nobukazu Tanaka, Daisuke Ito, Tomohiro Hirakawa
  • Publication number: 20230099232
    Abstract: A temporary substrate adhesive according to an embodiment includes a silane coupling agent and a photobase generator, but does not include a resin.
    Type: Application
    Filed: March 14, 2022
    Publication date: March 30, 2023
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaaki HIRAKAWA, Kazushi TATEYAMA
  • Patent number: 11254870
    Abstract: According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: February 22, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaaki Hirakawa, Ikuo Uematsu, Takahiro Kanai
  • Patent number: 10957553
    Abstract: According to one embodiment, an etching solution used for etching of silicon nitride is provided. The etching solution includes phosphoric acid, an acid, silicic acid compound, and water. The phosphoric acid has a first acid dissociation exponent pKa1. The acid has an acid dissociation exponent smaller than the first acid dissociation exponent pKa1. A mass ratio M1/M2 of mass M1 of the phosphoric acid to mass M2 of the acid having the acid dissociation exponent smaller than the first acid dissociation exponent pKa1 is within a range of 0.82 or more and 725 or less.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: March 23, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yukako Murakami, Masaaki Hirakawa, Ikuo Uematsu
  • Publication number: 20200308485
    Abstract: According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.
    Type: Application
    Filed: February 7, 2020
    Publication date: October 1, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masaaki HIRAKAWA, lkuo UEMATSU, Takahiro KANAI
  • Publication number: 20190198344
    Abstract: According to one embodiment, an etching solution used for etching of silicon nitride is provided. The etching solution includes phosphoric acid, an acid, silicic acid compound, and water. The phosphoric acid has a first acid dissociation exponent pKa1. The acid has an acid dissociation exponent smaller than the first acid dissociation exponent pKa1. A mass ratio M1/M2 of mass M1 of the phosphoric acid to mass M2 of the acid having the acid dissociation exponent smaller than the first acid dissociation exponent pKa1 is within a range of 0.82 or more and 725 or less.
    Type: Application
    Filed: March 6, 2019
    Publication date: June 27, 2019
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yukako MURAKAMI, Masaaki Hirakawa, Ikio Uematsu
  • Patent number: 10192733
    Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: January 29, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Junichi Igarashi, Katsuhiro Sato, Masaaki Hirakawa
  • Patent number: 10147619
    Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: December 4, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Katsuhiro Sato, Kaori Deura, Yoshinori Kitamura, Takahiro Terada, Yoshihiro Ogawa, Yuji Hashimoto, Masaaki Hirakawa, Yukako Murakami, Hideaki Hirabayashi
  • Patent number: 9718710
    Abstract: According to one embodiment, a treatment apparatus includes a dialysis unit, a treatment unit and a recovery unit. The dialysis unit is configured to dialyze a solution including a phosphoric acid, a silicon compound, and water. The treatment unit is configured to perform treatment of an object to be treated using a dialyzed solution. The recovery unit is configured to recover a solution used in the treatment of the object to be treated and supply to the dialysis unit. The dialysis unit includes a transmission part which allows anions to be transmitted. The recovery unit supplies the solution used in the treatment of the object to be treated, to a region in the dialysis unit. The region is divided by the transmission part.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: August 1, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Masaaki Hirakawa, Emi Matsui
  • Publication number: 20170162377
    Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to forma solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
    Type: Application
    Filed: February 23, 2017
    Publication date: June 8, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Junichi IGARASHI, Katsuhiro SATO, Masaaki HIRAKAWA
  • Patent number: 9620353
    Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: April 11, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Junichi Igarashi, Katsuhiro Sato, Masaaki Hirakawa
  • Publication number: 20170062231
    Abstract: A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.
    Type: Application
    Filed: August 23, 2016
    Publication date: March 2, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Katsuhiro SATO, Kaori DEURA, Yoshinori KITAMURA, Takahiro TERADA, Yoshihiro OGAWA, Yuji HASHIMOTO, Masaaki HIRAKAWA, Yukako MURAKAMI, Hideaki HIRABAYASHI
  • Publication number: 20160075570
    Abstract: According to one embodiment, a treatment apparatus includes a dialysis unit, a treatment unit and a recovery unit. The dialysis unit is configured to dialyze a solution including a phosphoric acid, a silicon compound, and water. The treatment unit is configured to perform treatment of an object to be treated using a dialyzed solution. The recovery unit is configured to recover a solution used in the treatment of the object to be treated and supply to the dialysis unit. The dialysis unit includes a transmission part which allows anions to be transmitted. The recovery unit supplies the solution used in the treatment of the object to be treated, to a region in the dialysis unit. The region is divided by the transmission part.
    Type: Application
    Filed: July 30, 2015
    Publication date: March 17, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masaaki HIRAKAWA, Emi Matsui
  • Patent number: 9274104
    Abstract: According to one embodiment, a measuring system using an optical waveguide is provided. The measuring system has an optical waveguide, magnetic fine particles, a magnetic field applying unit, a light source and a light receiving element. The optical waveguide has a sensing area to which first substances having a property of specifically bonding to subject substances to be measured are fixed. Second substances having a property of specifically bonding to the subject substances are fixed to the magnetic fine particle. The magnetic field applying unit generates a magnetic field for moving the magnetic fine particles. The light source inputs a light into the optical waveguide. The light receiving element receives the light output from the optical waveguide.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: March 1, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ichiro Tono, Shingo Kasai, Takaaki Wada, Isao Nawata, Masaaki Hirakawa, Tomohiro Takase, Kayoko Oomiya, Takeshi Yamauchi, Tadahiro Nakayama, Isamu Nitta
  • Publication number: 20150155159
    Abstract: A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a fine pattern formed therein; substituting the first liquid attached to the surface of the semiconductor substrate with a solution, the solution comprising a sublimate dissolved in a second liquid; vaporizing the second liquid and precipitating the sublimate to the surface of the semiconductor substrate to form a solid precipitate comprising the sublimate; and removing the precipitate by sublimation. For example, the sublimate may be a material having at least two carboxyl groups bonded to cyclohexane or a material formed of two carboxyl groups bonded to benzene with the bonding sites of the two carboxyl groups being adjacent to one another.
    Type: Application
    Filed: November 26, 2014
    Publication date: June 4, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Junichi IGARASHI, Katsuhiro SATO, Masaaki HIRAKAWA
  • Publication number: 20140076355
    Abstract: According to one embodiment, a treatment apparatus includes an electrolysis unit, an alkali addition unit, and a treatment unit. The electrolysis unit includes an anode electrode and a cathode electrode. The electrolysis unit is configured to electrolyze a solution containing an alkali containing no metal, hydrochloric acid, and water. The alkali addition unit is configured to further add the alkali containing no metal to a solution that has undergone the electrolysis. The treatment unit is configured to perform treatment of an object to be treated using a solution that has undergone the electrolysis and in which the alkali containing no metal is further added.
    Type: Application
    Filed: August 16, 2013
    Publication date: March 20, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hideaki HIRABAYASHI, Yuji NAGASHIMA, Masaaki HIRAKAWA
  • Publication number: 20130316386
    Abstract: According to one embodiment, a test element includes a base, a pair of optical element units, an optical waveguide unit, a detection unit and a holding unit. The base has transparency. The pair of optical element units are arranged away from each other on a major surface of the base. The optical waveguide unit is provided on the major surface of the base. The detection unit is provided on a major surface of the optical waveguide unit of between the optical element units. The major surface of the optical waveguide unit is an opposite side which touches the base. The holding unit is in a frame shape, and one end of the holding unit being is provided to protrude from a major surface of the detection unit. The detection unit includes a color former and a film-formed body holding the color former.
    Type: Application
    Filed: August 1, 2013
    Publication date: November 28, 2013
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ichiro Tono, Takaaki Wada, Kayoko Oomiya, Shingo Kasai, Masaaki Hirakawa
  • Patent number: 8372630
    Abstract: An optical glucose sensor chip includes a substrate, a pair of optical elements formed on a surface of the substrate for introducing light into the substrate and for emitting the light from the substrate, and a glucose sensing membrane formed on the surface of the substrate at a position between the optical elements. The sensing membrane includes a color reagent substrate, a first enzyme which oxidizes or reduces glucose, a second enzyme that generates a material which makes the color reagent substrate exhibit color by a reaction with a product obtained by oxidation or reduction of glucose, a nonionic cellulose derivative, and an ionic polymer into which a buffer is incorporated. At least one of the first and second enzymes is coated with the ionic polymer, and the color reagent substrate. The first and second enzymes, the buffer and the ionic polymer are supported by the nonionic cellulose derivative.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: February 12, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ikuo Uematsu, Masaaki Hirakawa, Kayoko Oomiya
  • Publication number: 20120252111
    Abstract: According to one embodiment, a measuring system using an optical waveguide is provided. The measuring system has an optical waveguide, magnetic fine particles, a magnetic field applying unit, a light source and a light receiving element. The optical waveguide has a sensing area to which first substances having a property of specifically bonding to subject substances to be measured are fixed. Second substances having a property of specifically bonding to the subject substances are fixed to the magnetic fine particle. The magnetic field applying unit generates a magnetic field for moving the magnetic fine particles. The light source inputs a light into the optical waveguide. The light receiving element receives the light output from the optical waveguide.
    Type: Application
    Filed: March 30, 2012
    Publication date: October 4, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Ichiro Tono, Shingo Kasai, Takaaki Wada, Isao Nawata, Masaaki Hirakawa, Tomohiro Takase, Kayoko Oomiya, Takeshi Yamauchi, Tadahiro Nakayama, Isamu Nitta