Abstract: An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.

Abstract: An optical scanner and an optical scanning device, an optical sensor unit, a coded data reader, and a POS system employing an optical scanner. The optical comprises an elastically deformable element, a vibrational input segment disposed at a first end of the elastically deformable element, a driven segment disposed at a second end of the elastically deformable element, a vibration source for inducing vibration in the vibrational input segment, whereby the vibration induced in the vibrational input segment produces elastic deformation of the elastically deformable element and consequent movement of the driven segment, and a stop for limiting a range of the movement of the driven segment.

Abstract: An organic electroluminescent device comprises an anode, a positive-hole transport layer, an emitting layer, (an electron transport layer) and a cathode which are layered in sequence, wherein the emitting layer (and/or the electron transport layer) comprises at least one of dioxazine compounds or diazine compounds. The emitting capability of the organic electroluminescent device is improved in luminance and efficiency upon application of a low voltage.

Abstract: An image forming apparatus, such as a copier, includes an unapproved copy preventor mechanism. The image forming apparatus includes a support such as a platen glass for supporting an original document; a light irradiation source for irradiating the original document with a light beam; and a detectors for detecting predetermined wavelength components of a reflected light from the original document which is irradiated with the irradiating light beam. The detector generates detection signals based on the detection of the predetermined wavelength components of the reflected light. An evaluator circuit determines whether the original document is a document which prohibits a production of an unapproved copy based on the detection signals.

Abstract: A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG., and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor.

Abstract: An image forming apparatus, such as a copier, includes an unapproved copy preventor mechanism. The image forming apparatus includes a support such as a platen glass for supporting an original document; a light irradiation source for irradiating the original document with a light beam; and a detectors for detecting predetermined wavelength components of a reflected light from the original document which is irradiated with the irradiating light beam. The detector generates detection signals based on the detection of the predetermined wavelength components of the reflected light. An evaluator circuit determines whether the original document is a document which prohibits a production of an unapproved copy based on the detection signals.

Abstract: A developing device is provided with a clutch to engage or disengage between a sleeve and a driving motor. When the developing device is used for development, spacing rollers on the sleeve are brought in contact with a photoreceptor drum and the speed of the driving motor is reduced to a lower speed, thereafter the clutch is operated to engage the sleeve and the driving motor and the speed of the driving motor is increased to a rated speed.

Abstract: A link assembly for a chain comprising a link portion, a top plate portion having a top surface and a bottom surface made of a predetermined first material, and a plate member made of a different material than the top plate portion and integrally molded to at least the one of the top or bottom surfaces of the top plate portion.

Abstract: An improved adjustable conveyor belt has a plurality of modules having intermeshing link ends extending lengthwise. The modules are connected together by connecting pins extending widthwise through holes formed in the link ends. Each of the modules also has side edges and a slot adjacent to each of its side edges. Thus, slots are provided along the side edges of the belt regardless of the arrangement of the modules. A stop, removably fitted into slots located along the side edges of the belt, prevents widthwise movement of the connecting pins. The stop has a guide mechanism for guiding the stop into the slot, an end portion which extends into the pin insertion hole, an engaging portion which engages a tongue formed in the slot, and a protrusion which snaps into the pin insertion hole. This configuration makes it easy to assemble, add to, and dismantle the conveyor belt, without substantially increasing the size or weight of the assembly.

Abstract: A flat top conveyor chain comprising a plurality of flat top links, each link having flat top surface for carrying articles. The links are chained by means of connecting pins to form a conveyor chain. The flat top link each are made from a polyacetal resin material having a long chain alkyl ester based lubricant therein.

Abstract: A polar group-containing ethylene polymer or copolymer having improved insulating properties, or a composition thereof is characterized in that said polar group-containing ethylene polymer or copolymer contains 20 to 8000 ppm of a polar group having a dipole moment of more than 0.8 debye. The polymer can be used in a power cable as insulation.

Abstract: A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG. , and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor.

Abstract: In a ceramic multilayer chip capacitor comprising alternately stacked internal electrodes of Ni or Ni alloy and dielectric layers, an oxide layer having a different composition from the dielectric layer is formed on the periphery of each internal electrode. The dielectric layer consists essentially of grains and a grain boundary phase, the percent area of the grain boundary phase being up to 2% of the area of a cross section of the dielectric layer. The capacitor is prepared by alternately stacking Ni or Ni alloy and a dielectric material in layer form, firing and then heat treating the stack under predetermined oxygen partial pressures. The dielectric material is a barium titanate base oxide material. The capacitor has a long effective life.

Abstract: A method for manufacturing a resin impregnated cloth bearing surface wherein the resin impregnated cloth is deaerated to reduce air bubbles in the finished bearing.

Abstract: A chain includes a plurality of identical link elements each including a main body part with a cantilevered connecting part integrally formed at one end thereof. The connecting part includes an enlarged rounded head portion and a narrower neck portion extending between the head portion and the main body part. The main body part has a rounded recess and a narrow slot formed in a first surface thereof. The slot adjoins an end of the recess opposite the connecting element. The slot extends from the recess to adjoin a side surface of the main body. Confining sections extend from the surface of the main body adjacent the slot so as to overlie opposite sides of the recess. The recess, slot and confining sections together define an opening in the first surface which has substantially the same shape as the connecting element.

Abstract: A non-reducible dielectric ceramic composition comprising barium titanate as the main component, which contains an additive expressed by the formula Ba.sub..alpha. Ca.sub.1-.alpha. SiO.sub.3 (0.43.ltoreq..alpha..ltoreq.0.62) in an amount of from 0.1 to 6 mol parts per 100 mol parts of the barium titanate.

Abstract: The ceramic dielectric composition can be fired in a reducing or nonoxidizing atmosphere and has the formula:(Ba.sub.1-x Sr.sub.x O).sub.a Ti.sub.1-y Zr.sub.y O.sub.2 +.alpha.((1-z)MnO+zCoO)+.beta.((1-t)A.sub.2 O.sub.5 +tL.sub.2 O.sub.3)+wSiO.sub.2,wherein:A=Nb, Ta, V;L=Y or a rare earth element;0.002.ltoreq.x+y+1.7.alpha.z.ltoreq.0.250;0.000.ltoreq.z.ltoreq.0.980;0.990.ltoreq.a.ltoreq.1.020;0.010.ltoreq..alpha..ltoreq.15.00 (mol %);0.01.ltoreq..beta./.alpha..ltoreq.0.55;0.000.ltoreq.t.ltoreq.0.980; and,0.002.ltoreq.w.ltoreq.1.00 (wt %).