Patents by Inventor Masaaki Irie

Masaaki Irie has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7040240
    Abstract: An ash melting system of the present invention includes a slagging combustion furnace (10) for melting ash into molten slag; and a slag separating apparatus (50) for bringing the molten slag (121) discharged from the slagging combustion furnace into contact with slag cooling water (152) to produce water-quenched slag (122), and separating the water-quenched slag from the slag cooling water. The ash melting system further includes a gas blowing means for blowing air or inert gas (132) between a slag discharge port (14) of the slagging combustion furnace and the surface of the slag cooling water.
    Type: Grant
    Filed: April 10, 2003
    Date of Patent: May 9, 2006
    Assignee: Ebara Corporation
    Inventors: Chikao Goke, Nobuya Azuma, Masaaki Irie, Kazuo Takano, Tetsuhisa Hirose, Kazuaki Watanabe
  • Patent number: 6902711
    Abstract: An apparatus for treating wastes includes a fluidized bed reactor for partially combusting the wastes at a relatively low temperature, and a separate relatively high temperature reactor for separate gasification of gaseous material and char from the first gasification. This synthesis gas thus formed is cooled, subjected to a conversion operation in a converter to produce hydrogen.
    Type: Grant
    Filed: March 21, 2000
    Date of Patent: June 7, 2005
    Assignees: Ebara Corporation, Ube Industries, Ltd.
    Inventors: Hiroyuki Fujimura, Yoshio Hirayama, Shosaku Fujinami, Shuichi Nagato, Tetsuhisa Hirose, Takahiro Oshita, Masaaki Irie, Kazuo Takano, Toshio Fukuda
  • Publication number: 20040231243
    Abstract: An ash melting system of the present invention includes a slagging combustion furnace (10) for melting ash into molten slag; and a slag separating apparatus (50) for bringing the molten slag (121) discharged from the slagging combustion furnace into contact with slag cooling water (152) to produce water-quenched slag (122), and separating the water-quenched slag from the slag cooling water. The ash melting system further includes a gas blowing means for blowing air or inert gas (132) between a slag discharge port (14) of the slagging combustion furnace and the surface of the slag cooling water.
    Type: Application
    Filed: January 30, 2004
    Publication date: November 25, 2004
    Inventors: Chikao Goke, Nobuya Azuma, Masaaki Irie, Kazuo Takano, Tetsuhisa Hirose, Kazuaki Watanabe
  • Patent number: 6730996
    Abstract: In a semiconductor device, at the time of resin sealing, a conductor within the resin is exposed at a surface on which a cooling device is to be mounted. With this configuration, a semiconductor device is capable of determining deterioration in cooling efficiency of the cooling device mounted on the package.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: May 4, 2004
    Assignee: Renesas Technology Corp.
    Inventor: Masaaki Irie
  • Patent number: 6676716
    Abstract: A method and apparatus for treating wastes by gasification recovers useful resources including energy, valuables such as metals, and gases for use as synthesis gas for chemical industries or fuel. The wastes are gasified in a fluidized-bed reactor at a relatively low temperature. Gaseous material and char produced in the fluidized-bed reactor are introduced into a high-temperature combustor, and low calorific gas or medium calorific gas is produced in the high-temperature combustor at a relatively high temperature. The fluidized-bed reactor preferably is a revolving flow-type fluidized-bed reactor. The high-temperature combustor preferably is a swirling-type high-temperature combustor.
    Type: Grant
    Filed: January 19, 2001
    Date of Patent: January 13, 2004
    Assignee: Ebara Corporation
    Inventors: Hiroyuki Fujimura, Shosaku Fujinami, Tetsuhisa Hirose, Takahiro Oshita, Masaaki Irie, Kazuo Takano
  • Publication number: 20030080412
    Abstract: In a semiconductor device, at the time of resin sealing by using a package member, a conductor is disposed in a loop so that its apex is at almost the same level as that of a surface (mounting face on which a cooling device is to be mounted) of the package member, thereby forming a contact terminal as contacting means. With the configuration, a semiconductor device capable of knowing deterioration in cooling efficiency of the cooling device by a method other than a method of detecting a temperature rise in the semiconductor device can be provided.
    Type: Application
    Filed: April 12, 2002
    Publication date: May 1, 2003
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Masaaki Irie
  • Patent number: 6548827
    Abstract: A semiconductor apparatus includes a wiring substrate and a semiconductor device to be mounted at a proper mounting position on the wiring substrate. The wiring substrate has two contact terminals in electrical contact with each other. The semiconductor device has two contact terminals in electrical contact with each other and two detection-utility terminals respectively in electrical contact with the contact terminals of the semiconductor device. The contact terminals of the wiring substrate are located at positions so that they come in electrical contact with the corresponding contacts of the semiconductor device.
    Type: Grant
    Filed: October 25, 2001
    Date of Patent: April 15, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Masaaki Irie
  • Patent number: 6534386
    Abstract: A method of manufacturing semiconductor chips includes adhering a sheet that is to be tensioned to a reverse side of a semiconductor wafer on a front side of which an integrated circuit has been formed; separating individual semiconductor chips from the semiconductor wafer by dicing the semiconductor wafer from the front side along dicing lines; applying a sealing resin layer of an uncured sealing resin on upper surfaces of the semiconductor chips and in gaps between adjacent semiconductor chips, with the individual semiconductor chips joined by the sheet, thereby sealing the semiconductor chips; and tensioning the sheet, thereby dividing the uncured sealing resin layer into separate pieces along the dicing lines.
    Type: Grant
    Filed: November 14, 2001
    Date of Patent: March 18, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Masaaki Irie
  • Publication number: 20020197770
    Abstract: The method of manufacturing semiconductor chips includes adhering a sheet that is to be drawn to a reverse side of a semiconductor wafer on which an integrated circuit has been formed; separating individual semiconductor chips from the semiconductor wafer by dicing the semiconductor wafer from a front side along dicing lines; providing a sealing resin layer formed from an uncured sealing resin on upper surfaces of the semiconductor chips and in gaps between adjacent semiconductor chips, with the individual semiconductor chips maintained in a collected state, thereby sealing the semiconductor chips; and drawing the sheet, thereby separating the uncured sealing resin along the dicing lines.
    Type: Application
    Filed: November 14, 2001
    Publication date: December 26, 2002
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Masaaki Irie
  • Publication number: 20020195706
    Abstract: The semiconductor apparatus comprises a wiring substrate; and a semiconductor device to be mounted on a proper mounting position on the wiring substrate. The wiring substrate has two contact terminals in electrical contact with each other. The semiconductor device has two contact terminals in electrical contact with each other, and two detection-utility terminals respectively in electrical contact with the contact terminals of the semiconductor device. The contact terminals of the wiring substrate are provided at such positions that they come in electrical contact with the corresponding ones of the semiconductor device.
    Type: Application
    Filed: October 25, 2001
    Publication date: December 26, 2002
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Masaaki Irie
  • Patent number: 6455011
    Abstract: A method and apparatus for treating wastes by two-stage gasification recovers metals or ash content in the wastes in such a state that they can be recycled, and gases containing carbon monoxide (CO) and hydrogen gas (H2) for use as synthesis gas for ammonia (NH3) or production of hydrogen gas. The wastes are gasified in a fluidized-bed reactor at a low temperature. Then, gaseous material and char produced in the fluidized-bed reactor are introduced into a high-temperature combustor, and gasified at a high temperature and ash content is converted into molten slag. After water scrubbing and a CO conversion reaction, the gas is separated into H2 and residual gas. The residual gas is then supplied to the fluidized-bed reactor as a fluidizing gas.
    Type: Grant
    Filed: September 9, 1999
    Date of Patent: September 24, 2002
    Assignees: Ebara Corporation, Ube Industries, Ltd.
    Inventors: Hiroyuki Fujimura, Yoshio Hirayama, Shosaku Fujinami, Kazuo Takano, Masaaki Irie, Tetsuhisa Hirose, Shuichi Nagato, Takahiro Oshita, Toshio Fukuda
  • Publication number: 20020088235
    Abstract: In an improved system for recovering heat from a combustion gas produced by burning wastes, the combustion gas or combustible gas produced by partial burning of the wastes subjected to dust filtration in a temperature range of 450-650° C. at a filtration velocity of 1-5 cm/sec under a pressure of from −5 kPa (gage) to 5 MPa before heat recovery is effected. The dust filtration is preferably performed using a filter medium which may or may not support a denitration catalyst. Heat recovery is preferably effected using a steam superheater. The dust-free gas may partly or wholly be reburnt with or without an auxiliary fuel to a sufficiently high temperature to permit heat recovery. The combustion furnace may be a gasifying furnace which, in turn, may be combined with a melting furnace.
    Type: Application
    Filed: November 5, 2001
    Publication date: July 11, 2002
    Inventors: Norihisa Miyoshi, Shosaku Fujinami, Tetsuhisa Hirose, Masaaki Irie, Kazuo Takano, Takahiro Oshita
  • Publication number: 20020083698
    Abstract: In an improved system for recovering heat from a combustion gas produced by burning wastes, the combustion gas or combustible gas produced by partial burning of the wastes subjected to dust filtration in a temperature range of 450-650° C. at a filtration velocity of 1-5 cm/sec under a pressure of from −5 kPa (gage) to 5 MPa before heat recovery is effected. The dust filtration is preferably performed using a filter medium which may or may not support a denitration catalyst. Heat recovery is preferably effected using a steam superheater. The dust-free gas may partly or wholly be reburnt with or without an auxiliary fuel to a sufficiently high temperature to permit heat recovery. The combustion furnace may be a gasifying furnace which, in turn, may be combined with a melting furnace.
    Type: Application
    Filed: November 5, 2001
    Publication date: July 4, 2002
    Inventors: Norihisa Miyoshi, Shosaku Fujinami, Tetsuhisa Hirose, Masaaki Irie, Kazuo Takano, Takahiro Oshita
  • Patent number: 6321540
    Abstract: In an improved system for recovering heat from a combustion gas produced by burning wastes, the combustion gas or combustible gas produced by partial burning of the wastes subjected to dust filtration in a temperature range of 450-650° C. at a filtration velocity of 1-5 cm/sec under a pressure of from −5 kPa (gage) to 5 MPa before heat recovery is effected. The dust filtration is preferably performed using a filter medium which may or may not support a denitration catalyst. Heat recovery is preferably effected using a steam superheater. The dust-free gas may partly or wholly be reburnt with or without an auxiliary fuel to a sufficiently high temperature to permit heat recovery. The combustion furnace may be a gasifying furnace which, in turn, may be combined with a melting furnace.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: November 27, 2001
    Inventors: Norihisa Miyoshi, Shosaku Fujinami, Tetsuhisa Hirose, Masaaki Irie, Kazuo Takano, Takahiro Oshita
  • Patent number: 6318088
    Abstract: In an improved system for recovering heat from a combustion gas produced by burning wastes, the combustion gas or combustible gas produced by partial burning of the wastes subjected to dust filtration in a temperature range of 450-650° C. at a filtration velocity of 1-5 cm/sec under a pressure of from −5 kPa (gage) to 5 MPa before heat recovery is effected. The dust filtration is preferably performed using a filter medium which may or may not support a denitration catalyst. Heat recovery is preferably effected using a steam superheater. The dust-free gas may partly or wholly be reburnt with or without an auxiliary fuel to a sufficiently high temperature to permit heat recovery. The combustion furnace may be a gasifying furnace which, in turn, may be combined with a melting furnace.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: November 20, 2001
    Assignee: Ebara Corporation
    Inventors: Norihisa Miyoshi, Shosaku Fujinami, Tetsuhisa Hirose, Masaaki Irie, Kazuo Takano, Takahiro Oshita
  • Patent number: 6301896
    Abstract: In an improved system for recovering heat from a combustion gas produced by burning wastes, the combustion gas or combustible gas produced by partial burning of the wastes subjected to dust filtration in a temperature range of 450-650° C. at a filtration velocity of 1-5 cm/sec under a pressure of from −5 kPa (gage) to 5 MPa before heat recovery is effected. The dust filtration is preferably performed using a filter medium which may or may not support a denitration catalyst. Heat recovery is preferably effected using a steam superheater. The dust-free gas may partly or wholly be reburnt with or without an auxiliary fuel to a sufficiently high temperature to permit heat recovery. The combustion furnace may be a gasifying furnace which, in turn, may be combined with a melting furnace.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: October 16, 2001
    Assignee: Ebara Corporation
    Inventors: Norihisa Miyoshi, Shosaku Fujinami, Tetsuhisa Hirose, Masaaki Irie, Kazuo Takano, Takahiro Oshita
  • Patent number: 6298666
    Abstract: In an improved system for recovering heat from a combustion gas produced by burning wastes, the combustion gas or combustible gas produced by partial burning of the wastes subjected to dust filtration in a temperature range of 450-650° C. at a filtration velocity of 1-5 cm/sec under a pressure of from −5 kPa (gage) to 5 MPa before heat recovery is effected. The dust filtration is preferably performed using a filter medium which may or may not support a denitration catalyst. Heat recovery is preferably effected using a steam superheater. The dust-free gas may partly or wholly be reburnt with or without an auxiliary fuel to a sufficiently high temperature to permit heat recovery. The combustion furnace may be a gasifying furnace which, in turn, may be combined with a melting furnace.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: October 9, 2001
    Assignee: Ebara Corporation
    Inventors: Norihisa Miyoshi, Shosaku Fujinami, Tetsuhisa Hirose, Masaaki Irie, Kazuo Takano, Takahiro Oshita
  • Publication number: 20010011438
    Abstract: A method and apparatus for treating wastes by gasification recovers useful resources including energy, valuables such as metals, and gases for use as synthesis gas for chemical industries or fuel. The wastes are gasified in a fluidized-bed reactor at a relatively low temperature. Gaseous material and char produced in the fluidized-bed reactor are introduced into a high-temperature combustor, and low calorific gas or medium calorific gas is produced in the high-temperature combustor at a relatively high temperature. The fluidized-bed reactor preferably is a revolving flow-type fluidized-bed reactor. The high-temperature combustor preferably is a swirling-type high-temperature combustor.
    Type: Application
    Filed: January 19, 2001
    Publication date: August 9, 2001
    Applicant: THE FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hiroyuki Fujimura, Shosaku Fujinami, Tetsuhisa Hirose, Takahiro Oshita, Masaaki Irie, Kazuo Takano
  • Patent number: 6190429
    Abstract: A method and apparatus for treating wastes by gasification recovers useful resources including energy, valuables such as metals, and gases for use as synthesis gas for chemical industries or fuel. The wastes are gasified in a fluidized-bed reactor at a relatively low temperature. Gaseous material and char produced in the fluidized-bed reactor are introduced into a high-temperature combustor, and low calorific gas or medium calorific gas is produced in the high-temperature combustor at a relatively high temperature. The fluidized-bed reactor preferably is a revolving flow-type fluidized-bed reactor. The high-temperature combustor preferably is a swirling-type high-temperature combustor.
    Type: Grant
    Filed: February 23, 1999
    Date of Patent: February 20, 2001
    Assignee: Ebara Corporation
    Inventors: Hiroyuki Fujimura, Shosaku Fujinami, Tetsuhisa Hirose, Takahiro Oshita, Masaaki Irie, Kazuo Takano
  • Patent number: 6168425
    Abstract: The present invention relates to a method for treating solid wastes such as refuse-derived fuel or biomass wastes by pyrolysis gasification in a fluidized-bed gasification furnace 1, and then high-temperature combustion in a melting furnace 9. A primary combustion in a fluidized-bed 4 of the gasification furnace is carried out at a temperature of 600±50° C., a secondary combustion in a freeboard 3 of the gasification furnace is carried out at a temperature of 725±75° C., and a tertiary combustion in the melting furnace 9 is carried out at a temperature higher than a fusion temperature of ashes by 50 to 100° C. An oxygen ratio (a ratio of an amount of oxygen supplied for combustion to a theoretical amount of oxygen for combustion) in the primary combustion is in the range of 0.1 to 0.3, an oxygen ratio in the secondary combustion is in the range of 0.05 to 0.1, an oxygen ratio in the tertiary combustion is in the range of 0.9 to 1.1, and a total oxygen ratio is about 1.3.
    Type: Grant
    Filed: August 16, 1999
    Date of Patent: January 2, 2001
    Assignee: Ebara Corporation
    Inventors: Shosaku Fujinami, Kazuo Takano, Masaaki Irie, Tetsuhisa Hirose, Takahiro Oshita