Abstract: There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

Abstract: An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency. In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

Abstract: An optical transmission device particularly adapted to a high-speed and large-capacity optical transmission system with a large optical output and excellent reflection resistance includes a waveguide-type optical element for emerging light and an optical transmission path that is to be optically coupled to the waveguide-type optical element. The waveguide-type optical element includes, at least in part thereof, a light-emitting portion having a gain-coupled diffraction grating and a mode-converting region integrated with the light-emitting portion.

Abstract: A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.

Abstract: An optical transmission device particularly adapted to a high-speed and large-capacity optical transmission system with a large optical output and excellent reflection resistance includes a waveguide-type optical element for emerging light and an optical transmission path that is to be optically coupled to the waveguide-type optical element. The waveguide-type optical element includes, at least in part thereof, a light-emitting portion having a gain-coupled diffraction grating and a mode-converting region integrated with the light-emitting portion.

Abstract: An optical transmission device particularly adapted to a high-speed and large-capacity optical transmission system with a large optical output and excellent reflection resistance includes a waveguide-type optical element for emerging light and an optical transmission path that is to be optically coupled to the waveguide-type optical element. The waveguide-type optical element includes, at least in part thereof, a light-emitting portion having a gain-coupled diffraction grating and a mode-converting region integrated with the light-emitting portion.

Abstract: An object of the technique of the present invention disclosed is to provide semiconductor laser devices and semiconductor laser array devices that can ensure high-precision oscillation wavelengths. Another object of the present invention is to provide semiconductor laser devices and semiconductor laser array devices that are less affected by the atmospheric temperature while ensuring high-precision oscillation wavelengths.

Abstract: After a shadow mask that is separate from a semiconductor substrate is used and is arranged over the semiconductor substrate via a wafer holder installed in a reaction chamber of a vapor-phase epitaxial system so that a predetermined space d can be secured, a semiconductor thin film crystal including a core layer and a cladding layer is grown by organometallic vapor-phase epitaxy. A core layer wherein the thickness of a grown film in an area which is opposite to a masking part of the shadow mask on the semiconductor substrate is reduced in the tapered shape can be readily obtained by introducing this process for growth in a normal process for fabricating a semiconductor guided-wave optical device. A semiconductor guided-wave optical device and a method of fabricating thereof wherein the thickness of a film which is to be a waveguide is tapered and the width of the waveguide is tapered without deteriorating crystallinity by a new crystal growing method using this shadow mask are obtained.

Abstract: A calcium tertiary phosphate is used as a carrier, and the carrier is caused to carry silver and zinc. The result is an antibacterial ceramic exhibiting an ultra high degree of whiteness and suppressed discoloration. This material may be heat fired at a temperature above 960.degree. C. to obtain a further improvement.

Abstract: A calcium phosphate ceramic such as hydroxyapatite or calcium tertiary phosphate or calcium carbonate is used as a carrier, and the carrier is caused to carry silicon in addition to silver, or silicon and zinc in addition to silver. The result is an antibacterial ceramic exhibiting an ultra high degree of whiteness and suppressed discoloration. This ceramic material may be heat-fired at a temperature above 960.degree. C. to obtain a further improvement.

Abstract: An antibacterial ceramic material wherein at least one ceramic selected from the group consisting of hydroxyapatite, calcium phosphate, calcium hydrogen phosphate, calcium carbonate, calcium silicate and zeolite is made to absorb and tightly retain at least one liquified metal salt selected from the group consisting of salts of silver, copper and zinc, after which heat firing at elevated temperatures is performed.