Abstract: The present invention is a method for producing a rare earth magnet, including preparing a magnetic powder and a modifier powder, mixing them to obtain a mixed powder, compression-molding the mixed powder in a magnetic field to obtain a magnetic-field molded body, and pressure-sintering the magnetic-field molded body to obtain a sintered body, wherein the magnetic powder includes a first particle group and a second particle group, the D50 values of the first particle group and the second particle group are denoted by d1 ?m and d2 ?m, respectively, d1 and d2 satisfy the relationship of 0.350?d2/d1?0.500, and the ratio between the total volume of the first particle group and the total volume of the second particle group is from 9:1 to 4:1; and a rare earth magnet obtained by the production method.

Abstract: A method of producing a SmFeN-based rare earth magnet, the method including: heat-treating a SmFeN-based anisotropic magnetic powder having a surface coated with a phosphate at a temperature of at least 80° C. but lower than 150° C.; mixing the heat-treated SmFeN-based anisotropic magnetic powder and a Zn-containing modifier powder by dispersion using resin-coated metal media or resin-coated ceramic media to obtain a powder mixture containing the SmFeN-based anisotropic magnetic powder and the modifier powder; compacting the powder mixture in a magnetic field to obtain a magnetic field compact; and pressure-sintering the magnetic field compact to obtain a sintered compact.

Abstract: Technology capable of simultaneously improving the state of filling in connection holes and the reliability of a wiring material in a bipolar semiconductor device or in a bipolar CMOS device. At least a tungsten film formed by the CVD method is included in a first wiring layer that accomplishes electrical conduction among the semiconductor elements by depositing an electrically conducting film on the connection holes formed in an insulating film deposited on the main surface of a semiconductor substrate. The tungsten film formed by the CVD method helps improve the state of filling in connection holes or deposition property, and enables the connection holes to be formed highly reliably. By using a tungsten film, furthermore, it is allowed to increase the resistance against electromigration of the wiring and to enhance reliability.

Abstract: An apparatus for depositing metal thin film on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate. Hydrogen atoms are prevented from adhering to portions of the substrate not to be deposited with a metal using a light source for heating only the substrate while cooling other portions exposed to starting material gases or a special gas flow controlling plate or shading plate.

Abstract: A metal thin film is deposited on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate by preventing hydrogen atoms from the adhesion to portions of the substrate not to be deposited with a metal using a special means for heating only the substrate or a special gas flow controlling means.