Patents by Inventor Masaaki Matsuda

Masaaki Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6295110
    Abstract: A polarized light irradiation method for achieving both wide view-field angles and display uniformity with less display irregularity as well as an apparatus for use in attaining this polarized light irradiation method. After reshaping output light from a light source 100 into a beam pattern BP, a polarized light separation plate 108 is used to separate therefrom only P-polarized wave components while simultaneously causing the polarizing axis of the separated P-polarized wave components to be identical to the short side direction of the rectangular beam pattern BP thereby letting it pass through an organic high-molecular or polymeric film acting as an optical radiation surface 110 for addition of a liquid crystal orientation controllability thereto.
    Type: Grant
    Filed: November 4, 1998
    Date of Patent: September 25, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Masahito Ohe, Shigeru Matsuyama, Kenkichi Suzuki, Masaaki Matsuda
  • Patent number: 6153808
    Abstract: In a method for separating at least one alkylnaphthalene from a stock mixture containing at least two alkylnaphthalenes selected from the group consisting of monoalkylnaphthalenes and dialkylnaphthalenes, a column packed with an optically active chromatographic packing is used for separation. The method can effectively separate a variety of alkylnaphthalenes from a mixture thereof.
    Type: Grant
    Filed: October 2, 1998
    Date of Patent: November 28, 2000
    Assignee: Kabushiki Kaisha Kobe Seiko Sho
    Inventors: Masahiro Motoyuki, Koji Yamamoto, Shingo Yoshida, Yonezo Matsumoto, Hisako Nakashima, Midori Kumazawa, Masaaki Matsuda
  • Patent number: 5949509
    Abstract: A first substrate has at least scanning signal electrodes, video signal electrodes and pixel electrodes, all of which constitute display pixels, and active elements. A first alignment layer is formed, directly or via an insulating layer, as a top layer on the electrodes constituting the display pixels and the active elements. A second substrate which is bonded to the first substrate with a very small interval provided in between is provided with a second alignment layer that is formed so as to confront the first alignment layer. A liquid crystal layer is provided in a space between the first and second alignment layers. The electrodes constituting the display pixels are formed so as to apply, to the liquid crystal layer, an electric field that is substantially parallel with the surfaces of the first and second substrates and are connected to an external control device for controlling the electric field in accordance with a desired display pattern.
    Type: Grant
    Filed: May 8, 1998
    Date of Patent: September 7, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Masahito Ohe, Shigeru Matsuyama, Masaaki Matsuda
  • Patent number: 5555112
    Abstract: In a liquid crystal display substrate in which the pixel electrode is applied with a voltage through the drain and source of a thin-film transistor (TFT) that conducts by a voltage applied to the TFT gate electrode, this gate electrode and a busline connected to the gate electrode are formed as a multi-layered structure consisting of a gate layer and at least two layers of a gate insulation film and an amorphous silicon film. The multi-layered structure is formed by etching through a single mask.
    Type: Grant
    Filed: February 9, 1994
    Date of Patent: September 10, 1996
    Assignees: Hitachi, Ltd., Hitachi Device Engineering Co., Ltd.
    Inventors: Ryoji Oritsuki, Minoru Hiroshima, Masahiro Yanai, Masaaki Matsuda, Toshikazu Horii, Yuichi Hashimoto, Hayao Kozai, Kenkichi Suzuki, Masaru Takabatake, Takashi Isoda
  • Patent number: 5232952
    Abstract: Finely dispersed metal-carrying compound whose metal has 50 .ANG. or less in size, which is useful as, for instance, catalysts and electrically conducting agents, is prepared by heating ion-exchange resin on which metal ion such as Pt ion is adsorbed, at 300.degree.-1500.degree. C. under an inert gas atmosphere, and, if desired, reducing.
    Type: Grant
    Filed: November 18, 1988
    Date of Patent: August 3, 1993
    Assignee: Sumitomo Chemical Co., Ltd.
    Inventors: Masaaki Matsuda, Masao Minobe
  • Patent number: 4999171
    Abstract: A process for recovery of gallium from aqueous solution containing gallium by adsorbing gallium to a chelate resin is disclosed. According to this process, the aqueous solution containing gallium is contacted batchwise with a chelate resin having a high selective adsorptivity for gallium or by flowing the aqueous solution through the resin at a rate of at least 20 parts by volume/hr of the aqueous solution per 1 part by volume of the resin.
    Type: Grant
    Filed: August 2, 1989
    Date of Patent: March 12, 1991
    Assignee: Sumitomo Chemical Co. Ltd.
    Inventors: Yasuyuki Kato, Masaaki Matsuda, Kenji Ochi
  • Patent number: 4927541
    Abstract: Amino acid each is separated and refined by bringing aqueous solution containing various amino acids into contact with chelate resins having aminocarboxylic acid groups or aminophosphonic acid groups and having metal ions coordinated, until amino acids are absorbed on the resins, and then eluting the acids.
    Type: Grant
    Filed: April 3, 1989
    Date of Patent: May 22, 1990
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Masaaki Matsuda, Yuji Yoshida
  • Patent number: 4797264
    Abstract: Chelating agents on which metals such as uranium have been adsorbed are brought into contact with an eluent of aqueous solution containing reducing agents and basic compounds, until the metals are eluted. The elution is effected with large speed without degradation of the chelating agents. Preferred chelating agents are rather stable under basic conditions but not under acidic conditions, for example, those having .dbd.NOH group in their molecules. The reducing agents and basic compounds in the eluent are, for example, sulfurous acid or salts thereof and sodium hydroxide, respectively.
    Type: Grant
    Filed: May 27, 1986
    Date of Patent: January 10, 1989
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yasuhiko Inoue, Masaaki Matsuda, Yoshirou Akiyoshi
  • Patent number: 4786481
    Abstract: A method for eluting a metal adsorbed on a chelating agent with an eluent, which comprises using as the eluent an aqueous solution containing a water-soluble inorganic sulfide and a basic compound at concentrations of 0.005 to 3N and 0.1N or more, respectively.
    Type: Grant
    Filed: July 25, 1985
    Date of Patent: November 22, 1988
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yushin Kataoka, Masaaki Matsuda, Masahiro Aoi
  • Patent number: 4605706
    Abstract: A chelate resin having a functional group of the formula: ##STR1## wherein R.sub.1 and R.sub.2 are each independently hydrogen, alkyl, aminoalkyl, phenyl or a substituted group thereof and another functional group of the formula: ##STR2## wherein R.sub.3 is amino, alkylamino, polyethylenepolyamino, hydrazo, hydrazino, hydrazono, amidino, guanidino, semicarbazide or a substituted group thereof, has an excellent adsorption capacity for metal ions.
    Type: Grant
    Filed: May 28, 1985
    Date of Patent: August 12, 1986
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yushin Kataoka, Masaaki Matsuda, Kenji Ochi, Masahiro Aoi
  • Patent number: 4565673
    Abstract: A process for eluting indium from a chelate resin having a phosphorus atom-containing, chelate-forming group which contains adsorbed indium, which comprises contacting said resin firstly with a primary eluent containing an acid containing no halogen atom in the molecule at a concentration of 0.1N or higher and then with an eluent for indium which is selected from the group consisting of (1) a solution of an acid containing a halogen atom in the molecule, (2) a mixed solution of (a) a metal halide, an ammonium halide or a mixture thereof and (b) an acid and (3) a mixed solution of a sulfide and a base compound.
    Type: Grant
    Filed: December 27, 1984
    Date of Patent: January 21, 1986
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yushin Kataoka, Masaaki Matsuda, Masahiro Aoi, Kunitake Chino
  • Patent number: 4564659
    Abstract: A chelate resin having a functional group of the formula: ##STR1## wherein R.sub.1 and R.sub.2 are each independently hydrogen, alkyl, aminoalkyl, phenyl or a substituted group thereof and another functional group of the formula: ##STR2## wherein R.sub.3 is amino, alkylamino, polyethylenepolyamino, hydrazo, hydrazino, hydrazono, amidino, guanidino, semicarbazide or a substituted group thereof, has an excellent adsorption capacity for metal ions.
    Type: Grant
    Filed: August 22, 1983
    Date of Patent: January 14, 1986
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yushin Kataoka, Masaaki Matsuda, Kenji Ochi, Masahiro Aoi
  • Patent number: 4468374
    Abstract: Gallium contained in a solution, especially a strongly basic aqueous solution can be effectively recovered by contacting the solution with a chelate resin having (A) .dbd.NOH group and (B) functional group capable of forming a chelate bond with said functional group (A) through gallium or a chelate resin having metal salt of said functional group to adsorb gallium to the resin.
    Type: Grant
    Filed: September 10, 1982
    Date of Patent: August 28, 1984
    Assignee: Simitomo Chemical Company, Limited
    Inventors: Yushin Kataoka, Masaaki Matsuda, Hiroshi Yoshitake, Yoshikazu Hirose
  • Patent number: 4442231
    Abstract: An aminophosphonic acid chelate resin, prepared by reacting an amino resin having amine-reactive groups (A) with an amino compound having one or more primary and/or secondary amino groups (B) to produce an aminated resin and subsequently reacting thus produced aminated resin with an alkylphosphonation agent (C), shows excellent adsorption ability of metal ions having low atomic weights such as calcium ions, magnesium ions, etc., when applied to a solution having high salt concentration.
    Type: Grant
    Filed: April 16, 1982
    Date of Patent: April 10, 1984
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yushin Kataoka, Masaaki Matsuda, Masaru Kamoda
  • Patent number: 4277566
    Abstract: A chelate resin produced by reacting (A) a resin having one or more primary and/or secondary amino groups in the molecule with (B) a polyfunctional compound having at least two reactive groups with amine and (C) an amino compound having one or more primary and/or secondary amino groups, or with a reaction product of said (B) polyfunctional compound and said (C) amino compound, shows excellent heavy metal collecting ability without being influenced by other coexisting ions.
    Type: Grant
    Filed: March 5, 1979
    Date of Patent: July 7, 1981
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Yushin Kataoka, Masaaki Matsuda, Masaru Kamoda
  • Patent number: 4039446
    Abstract: A novel heavy metal-binding agent is obtained by reacting a resin containing in its molecular chain --NH--, --NH.sub.2, or both thereof with carbon disulfide and, if necessary, treating the reaction product thus obtained with a base. As compared with conventionally known metal-binding agents, the present metal-binding agent can remove heavy metals more effectively from solutions or gases containing these metals even in a range of extremely low concentrations, and, hence, is useful for pollution control.
    Type: Grant
    Filed: February 3, 1975
    Date of Patent: August 2, 1977
    Assignee: Sumitomo Chemical Company, Limited
    Inventors: Kouichi Ban, Yasumiti Namba, Yukihiro Sekine, Masaaki Matsuda