Patents by Inventor Masaaki NAGOYA

Masaaki NAGOYA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10395828
    Abstract: The dielectric layers are formed from a dielectric porcelain formed from crystal particles containing barium titanate as a main component and containing a rare earth element, and the crystal particles have, in a particle boundary vicinity, a low concentration region in which the concentration of the rare earth element is lower than the concentration of the rare earth element in an inside. The crystal particles further contain vanadium, and the low concentration region contains a larger amount of the vanadium than the amount of the vanadium in the inside. The crystal particles further contain magnesium and manganese, and the magnesium and the manganese have a concentration gradient that is at a maximum at the particle boundary vicinity and that lowers toward the inside.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: August 27, 2019
    Assignee: KYOCERA Corporation
    Inventors: Masahiro Nishigaki, Hideyuki Osuzu, Jun Ueno, Masaaki Nagoya, Shota Mukoyama
  • Publication number: 20180308637
    Abstract: The dielectric layers are formed from a dielectric porcelain formed from crystal particles containing barium titanate as a main component and containing a rare earth element, and the crystal particles have, in a particle boundary vicinity, a low concentration region in which the concentration of the rare earth element is lower than the concentration of the rare earth element in an inside. The crystal particles further contain vanadium, and the low concentration region contains a larger amount of the vanadium than the amount of the vanadium in the inside. The crystal particles further contain magnesium and manganese, and the magnesium and the manganese have a concentration gradient that is at a maximum at the particle boundary vicinity and that lowers toward the inside.
    Type: Application
    Filed: October 26, 2016
    Publication date: October 25, 2018
    Inventors: Masahiro NISHIGAKI, Hideyuki OSUZU, Jun UENO, Masaaki NAGOYA, Shota MUKOYAMA