Abstract: [Problem] To Provide a fabric-like sensor in which an output signal can be improved when in use and damage or fracture of a sensor element hardly occurs, and a fabric-like sensor device using it. Solution In a fabric-like sensor S having a fabric base material 1 and a line-shaped sensor element 2, at least one line-shaped cavity portion 11 is provided inside the fabric base material 1, and at least a part of the cavity portion 11 is composed of a raw fabric at least a part of the cavity portion has no elasticity in a line direction of the cavity portion 11, and further the line-shaped sensor element 2 is arranged in a state of not being substantially constrained or fixed in at least one of cavity portions in a fabric 1.

Abstract: According to one embodiment, in a semiconductor device, a first semiconductor layer of a first conductivity type is formed on a semiconductor substrate of the first conductivity type. A second semiconductor layer of a second conductivity type is formed on the first semiconductor layer at a central portion except an end portion of the semiconductor substrate. A plurality of belt-shaped control electrodes is formed in parallel through a first insulating film on a surface of the second semiconductor layer. A third semiconductor layer of the first conductivity type selectively is formed on a surface of the second semiconductor layer between the control electrodes. A first electrode is formed on the control electrodes through respective second insulating films and is in contact with the third semiconductor layer. A second electrode is formed on the first semiconductor layer at the end portion of the semiconductor substrate.

Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate, a drain layer provided thereon, a first body layer provided thereon, source layers and a gate electrode buried in each of a plurality of trenches. The source layers are discretely arranged in a staggered pattern on a surface of the first body layer in a first direction and in a second direction orthogonal to the first direction. The trenches extend in a third direction on the surface of the first body layer, are arranged in a fourth direction orthogonal to the third direction, and pierce through the source layer and the first body layer into the drain layer. The gate electrode is buried in each of the trenches via a gate insulating film. Sum of the width of the source layer and the spacing between the source layer and the adjacent source layer is smaller than spacing between the adjacent trenches.

Abstract: A user creates image data where the user optionally designs an arrangement and a size of each meter in a combination meter on a personal computer screen based on meter designing data DT1 including manufacturing conditions at a user-side meter designing section. Combination meter producing data DT2 is generated from the image data and sent to a combination meter manufacturing data processing section. The processing section derives meter manufacturing data DT3 from the meter producing data DT2. Consequently, the data processing section automatically sends out an order of manufacturing the combination meter to a manufacturer side. The manufacturer side assembles the combination meter according to the meter manufacturing data DT3.

Abstract: A user creates image data where the user optionally designs an arrangement and a size of each meter in a combination meter on a personal computer screen based on meter designing data DT1 including manufacturing conditions at a user-side meter designing section 1. Combination meter producing data DT2 is generated from the image data and sent to a combination meter manufacturing data processing section 2. The processing section 2 derives meter manufacturing data DT3 from the meter producing data DT2. Consequently, the data processing section 2 automatically sends out an order of manufacturing the combination meter to a manufacturer side 3. The manufacturer side 3 assembles the combination meter according to the meter manufacturing data DT3.