Abstract: When washing the inside of a reactor vessel which is used repeatedly, a rough suction is performed before suctioning with a washing tip; however, unwanted washing liquid may remain that may affect analysis results. The present invention provides an automatic analysis device for analyzing a sample using light, in which the automatic analysis device is characterized in that: a washing mechanism comprises a washing liquid supply nozzle that supplies washing liquid to a reactor vessel after analysis, a washing liquid suction nozzle that suctions the supplied washing liquid, a washing tip provided to the bottom end of the washing liquid suction nozzle, and a rough suction nozzle that suctions, in advance, a liquid within the reactor vessel before suctioning with the washing tip; and after the rough suction, liquid is caused to remain so that the bottom surface of the reactor vessel is not exposed.

Abstract: When washing the inside of a reactor vessel which is used repeatedly, a rough suction is performed before suctioning with a washing tip; however, unwanted washing liquid may remain that may affect analysis results. The present invention provides an automatic analysis device for analyzing a sample using light, in which the automatic analysis device is characterized in that: a washing mechanism comprises a washing liquid supply nozzle that supplies washing liquid to a reactor vessel after analysis, a washing liquid suction nozzle that suctions the supplied washing liquid, a washing tip provided to the bottom end of the washing liquid suction nozzle, and a rough suction nozzle that suctions, in advance, a liquid within the reactor vessel before suctioning with the washing tip; and after the rough suction, liquid is caused to remain so that the bottom surface of the reactor vessel is not exposed.

Abstract: In a reactor cleaning apparatus 1 which cleans an inner wall surface 72 of a reactor 70 which generates polycrystalline silicon, a bell jar of the reactor 70 has a dual structure, a through hole 11 is formed along a vertical direction at a central portion of a substantially disc-like tray 10 placed in a horizontal state, a flange portion 13 in which an opening edge of the reactor 70 is placed is formed at an outer peripheral portion of the tray 10, a shaft 20 is provided through the through hole 11 of the tray 10 so as to be rotatable and movable in the vertical direction, a nozzle device 50 which sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft 20, a drive mechanism 30 which rotates the shaft 20 and moves the shaft in the vertical direction is provided at a base end of the shaft 20, and steam piping 62 capable of supplying the steam within the bell jar of the reactor 70 is provided.

Abstract: An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.

Abstract: The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from ?10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.

Abstract: A polycrystalline silicon reactor which can prevent polycrystalline silicon which deposits on the surface of an electrode holding a silicon seed rod from being peeled off is provided. In a polycrystalline silicon reactor which applies an electric current to a silicon seed rod provided within a furnace, thereby heating the silicon seed rod, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod, the reactor includes, at a bottom plate of the furnace, an electrode holder provided so as to be electrically insulated from the bottom plate, and a seed rod holding electrode connected to the electrode holder, and holding the silicon seed rod toward the upside. Concavo-convex portions exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode.

Abstract: A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.

Abstract: An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other.

Abstract: A polycrystalline silicon manufacturing apparatus efficiently produces high-quality polycrystalline silicon. There is provided a polycrystalline silicon manufacturing apparatus, in which a plurality of gas supplying ports 6A for ejecting raw gas upward in a reactor 1 and gas exhausting ports 7 for exhausting exhaust gas after a reaction are provided on an inner bottom of the reactor 1 in which a plurality of silicon seed rods 4 are stood, the silicon seed rods 4 are heated and the polycrystalline silicon is deposited from the raw gas on the surfaces.

Abstract: The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from ?10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.

Abstract: The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from ?10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.

Abstract: A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas.

Abstract: A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition.

Abstract: In a reactor cleaning apparatus 1 which cleans an inner wall surface 72 of a reactor 70 which generates polycrystalline silicon, a bell jar of the reactor 70 has a dual structure, a through hole 11 is formed along a vertical direction at a central portion of a substantially disc-like tray 10 placed in a horizontal state, a flange portion 13 in which an opening edge of the reactor 70 is placed is formed at an outer peripheral portion of the tray 10, a shaft 20 is provided through the through hole 11 of the tray 10 so as to be rotatable and movable in the vertical direction, a nozzle device 50 which sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft 20, a drive mechanism 30 which rotates the shaft 20 and moves the shaft in the vertical direction is provided at a base end of the shaft 20, and steam piping 62 capable of supplying the steam within the bell jar of the reactor 70 is provided.

Abstract: In a reactor cleaning apparatus 1 which cleans an inner wall surface 72 of a reactor 70 which generates polycrystalline silicon, a bell jar of the reactor 70 has a dual structure, a through hole 11 is formed along a vertical direction at a central portion of a substantially disc-like tray 10 placed in a horizontal state, a flange portion 13 in which an opening edge of the reactor 70 is placed is formed at an outer peripheral portion of the tray 10, a shaft 20 is provided through the through hole 11 of the tray 10 so as to be rotatable and movable in the vertical direction, a nozzle device 50 which sprays a cleaning water at high pressure in three-dimensional directions is provided at an upper end of the shaft 20, a drive mechanism 30 which rotates the shaft 20 and moves the shaft in the vertical direction is provided at a base end of the shaft 20, and steam piping 62 capable of supplying the steam within the bell jar of the reactor 70 is provided.

Abstract: A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.

Abstract: An apparatus for manufacturing polycrystalline silicon whereby raw-material gas is supplied to one or more heated silicon seed rods provided vertically in a reactor so as to deposit the polycrystalline silicon on a surface of the silicon seed rod, having a seed rod holding member, made of conductive material, having a holding hole in which a lower end of the silicon seed rod is inserted, the holding hole having a horizontal cross-sectional shape with at least two corners, and the holding member having a screw hole extending from the outer surface of the seed rod holding member to at least the holding hole and formed at the location of at least two corners of the holding hole; and a fixing screw which fixes the silicon seed rod and is threaded through at least one of the screw holes.

Abstract: A manufacturing apparatus of polycrystalline silicon products polycrystalline silicon by depositing on a surface of a silicon seed rod by supplying raw-material gas to the heated silicon seed rod provided vertically in a reactor, includes: an electrode which holds the silicon seed rod and is made of carbon; an electrode holder which holds the electrode, and cooled by coolant medium flowing therein, wherein the electrode includes: a seed rod holding member which holds the silicon seed rod; a heat cap which is provided between the seed rod holding member and the electrode holder; and a cap protector having a ring-like plate shape, which covers an upper surface of the heat cap, and in which a through hole penetrating the lower-end portion of the seed rod holding member is formed.

Abstract: An apparatus for producing polycrystalline silicon which heats a silicon seed rod in a reactor to which a raw material gas is supplied, and deposits polycrystalline silicon on the surface of the silicon seed rod, includes an electrode extending in a vertical direction to hold the silicon seed rod, an electrode holder having a cooling flow passage circulating a cooling medium formed therein, and inserted into a through-hole formed in a bottom plate of the reactor to hold the electrode, and an annular insulating material arranged between an inner peripheral surface of the through-hole and an outer peripheral surface of the electrode holder to electrically insulate the bottom plate and the electrode holder from each other.

Abstract: A polycrystalline silicon manufacturing apparatus is provided which supplies raw gas to the inside of a reaction furnace and supplies a current from an electrode to a silicon seed rod in a state where the vertically extending silicon seed rod is uprightly stood on each of the plural electrodes disposed in a bottom plate portion of the reaction furnace so as to heat the silicon seed rod and thus to deposit polycrystalline silicon on a surface of the silicon seed rod by means of the reaction of the raw gas.