Abstract: A granule-forming method using a semi-batch reaction tank, wherein: operation cycles of a first operation cycle for performing a biological treatment step at a first sludge load and after the first operation cycle, a second operation cycle for performing the biological treatment step at a second sludge load are performed repeatedly; the first sludge load is set so that the soluble BOD concentration in the semi-batch reaction tank at the time of completion of the biological treatment step of the first operation cycle does not decrease to a threshold value or less; and the second sludge load is set so that the soluble BOD concentration in the semi-batch reaction tank at the time of completion of the biological treatment step of the second operation cycle is at or below the threshold value.

Abstract: A granule-forming method using a semi-batch reaction tank, wherein: operation cycles of a first operation cycle for performing a biological treatment step at a first sludge load and after the first operation cycle, a second operation cycle for performing the biological treatment step at a second sludge load are performed repeatedly; the first sludge load is set so that the soluble BOD concentration in the semi-batch reaction tank at the time of completion of the biological treatment step of the first operation cycle does not decrease to a threshold value or less; and the second sludge load is set so that the soluble BOD concentration in the semi-batch reaction tank at the time of completion of the biological treatment step of the second operation cycle is at or below the threshold value.

Abstract: A Schottky barrier diode (semiconductor device) includes at least: a semiconductor substrate of an N type (first conductivity type); a semiconductor portion (first portion) of a P type (second conductivity type) opposite to the N type, the semiconductor portion being formed on a part of a one main surface side of the semiconductor substrate; a metal portion (second portion) with conductivity formed on the one main surface of the semiconductor substrate so as to be electrically connected to a part of the P type semiconductor portion; and a high resistance portion (third portion) formed so as to be electrically connected to a part of the P type semiconductor portion and to be in contact with a side surface and a bottom surface connected thereto of the P type semiconductor portion.

Abstract: A Schottky barrier diode (semiconductor device) includes at least: a semiconductor substrate of an N type (first conductivity type); a semiconductor portion (first portion) of a P type (second conductivity type) opposite to the N type, the semiconductor portion being formed on a part of a one main surface side of the semiconductor substrate; a metal portion (second portion) with conductivity formed on the one main surface of the semiconductor substrate so as to be electrically connected to a part of the P type semiconductor portion; and a high resistance portion (third portion) formed so as to be electrically connected to a part of the P type semiconductor portion and to be in contact with a side surface and a bottom surface connected thereto of the P type semiconductor portion.

Abstract: It is an objective to improve reverse surge withstand capability of a semiconductor device, for example, a Schottky barrier diode. A p-type semiconductor section 14 includes a p+ type semiconductor portion (first concentration portion) 14a and a p? type semiconductor portion (second concentration portion) 14b, which have different impurity concentrations from each other. Additionally, a part of a side surface 13S of a metal portion 13 and a part of a bottom surface 13B of the metal portion 13 connected to the side surface 13S thereof are in contact with a part of the p+ type semiconductor portion 14a. Further, at least a part of a side surface 14bS of the p? type semiconductor portion 14b is in contact with a side surface 14aS of the p+ type semiconductor portion 14a.

Abstract: It is an objective to improve reverse surge withstand capability of a semiconductor device, for example, a Schottky barrier diode. A p-type semiconductor section 14 includes a p+ type semiconductor portion (first concentration portion) 14a and a p? type semiconductor portion (second concentration portion) 14b, which have different impurity concentrations from each other. Additionally, a part of a side surface 13S of a metal portion 13 and a part of a bottom surface 13B of the metal portion 13 connected to the side surface 13S thereof are in contact with a part of the p+ type semiconductor portion 14a. Further, at least a part of a side surface 14bS of the p? type semiconductor portion 14b is in contact with a side surface 14aS of the p+ type semiconductor portion 14a.

Abstract: The present invention has an object of providing a thyristor-type semiconductor device and a manufacturing method for the same which can prevent, even when conventional manufacturing equipment is used, the electrode terminals 13, 14 from being provided in a significantly tilted state where the electrode terminals 13, 14 are in contact with the silicon substrate 20, and can also prevent the electrode terminals 13, 14 from being provided in a state where the electrode terminals 13, 14 come into contact with the silicon substrate 20, even when there are warping and undulations in the silicon substrate 20. In a semiconductor device of the present invention, the supports 11a, 11b are provided on both surfaces of the silicon substrate 20 using a glass material. When doing so, the support 11b is disposed in a part of the boundary between the second N-type layer 18 and the second P-type layer 19 that is opposite the side surface 22.

Abstract: The present invention has an object of providing a thyristor-type semiconductor device and a manufacturing method for the same which can prevent, even when conventional manufacturing equipment is used, the electrode terminals 13, 14 from being provided in a significantly tilted state where the electrode terminals 13, 14 are in contact with the silicon substrate 20, and can also prevent the electrode terminals 13, 14 from being provided in a state where the electrode terminals 13, 14 come into contact with the silicon substrate 20, even when there are warping and undulations in the silicon substrate 20. In a semiconductor device of the present invention, the supports 11a, 11b are provided on both surfaces of the silicon substrate 20 using a glass material. When doing so, the support 11b is disposed in a part of the boundary between the second N-type layer 18 and the second P-type layer 19 that is opposite the side surface 22.

Abstract: In an electrically operated power steering device wherein a rotational shaft of an electric motor is rotationally driven so as to apply a steering assist force to a steering shaft, a stator of the electric motor is provided with teeth portions composed of electromagnetic steel plates, coils wound around the teeth portions, and a yoke portion made of a magnetic substance that accommodates the coils and the teeth portions and can be utilized as a housing. Hence, the electrically operated power steering device can be made simple and compact, and it is possible to ensure running stability of the vehicle appropriately (i.e., to prevent swinging motions in response to a force inputted from the steering wheels).

Abstract: An electric motor has a rotor for rotation in a stator and a plurality of permanent magnets arranged on an outer peripheral surface of the rotor. A radially inner side surface of each permanent magnet is a curved to generally be convex in a radially inward direction. The outer peripheral surface of the rotor has curved recess surfaces, each of which contacts the radially inner side curved surface of a corresponding permanent magnet so that magnetic flux between adjacent permanent magnets is considerably prevented from locally concentrating within the rotor.

Abstract: It is an object of the present invention to provide a bimetal having a same or wider proportional temperature range than a bimetal using a 42 wt % Ni--Fe alloy as a low thermal expansion alloy, and a higher bending characteristic of a large bending coefficient than a bimetal using a 36 wt % Ni--Fe alloy. The bimetal is formed by bonding a Ni--Co--Fe group low thermal expansion alloy, wherein a total amount of Ni and Co restricted to a very narrow containing range is within a specific composition range, a thermal expansion coefficient at 30 to 100.degree.C. is made similar to that of a 31 wt % Ni--5 wt % Co--Fe alloy of a nominal composition, a thermal expansion is very small and 2.times.10.sup.-6 /.degree.C. or less in the temperature range of 30.degree.to 300.degree. C., and further, a transition point is 250.degree. C. or higher and a transformation temperature is 50.degree. C.