Abstract: The present invention improves luminous efficiency of a nitride semiconductor light-emitting element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar Alx2Iny2Gaz2N layer having a thickness of t1 is interposed between the Alx1Iny1Gaz1N layer included in the p-type nitride semiconductor layer and the active layer (0<x2?1, 0?y2<1, 0<z2<1, x2+y2+z2=1). The Alx2Iny2Gaz2N layer has first and second interfaces located close to or in contact with the active layer and the Alx1Iny1Gaz1N layer, respectively. The Alx2Iny2Gaz2N layer has a hydrogen concentration distribution along its thickness direction in the inside thereof in such a manner that the hydrogen concentration is increased from the first interface to a thickness t2 (t2<t1), reaches a peak at the thickness t2, and is decreased from the thickness t2 to the second interface. Magnesium contained in the Alx1Iny1Gaz1N layer is prevented from being diffused into the active layer to improve the luminous efficiency.

Abstract: The present invention improves luminous efficiency of a nitride semiconductor light-emitting element. In the nitride semiconductor light-emitting element, a non-polar or semi-polar Alx2Iny2Gaz2N layer having a thickness of t1 is interposed between the Alx1Iny1Gaz1N layer included in the p-type nitride semiconductor layer and the active layer (0<x2?1, 0?y2<1, 0<z2<1, x2+y2+z2=1). The Alx2Iny2Gaz2N layer has first and second interfaces located close to or in contact with the active layer and the Alx1Iny1Gaz1N layer, respectively. The Alx2Iny2Gaz2N layer has a hydrogen concentration distribution along its thickness direction in the inside thereof in such a manner that the hydrogen concentration is increased from the first interface to a thickness t2 (t2<t1), reaches a peak at the thickness t2, and is decreased from the thickness t2 to the second interface. Magnesium contained in the Alx1Iny1Gaz1N layer is prevented from being diffused into the active layer to improve the luminous efficiency.

Abstract: A semiconductor light-emitting device includes: a support; a semiconductor light-emitting element bonded to the support and comprising a first electrode, a second electrode, and a semiconductor layer including at least an active layer, at least one of the first and second electrodes overlying the semiconductor layer; and a wiring metal formed to extend from above a portion of an upper surface of the support not underlying the semiconductor light-emitting element to one said electrode overlying the semiconductor layer. The electrode is fed with power through the wiring metal.

Abstract: A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2<Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: A semiconductor device has a substrate, a first Group III nitride semiconductor layer formed on the substrate, a first oxide layer formed in proximity to the upper portions of defects present in the first Group III nitride semiconductor layer, and a second Group III nitride semiconductor layer including a positive layer and formed over each of the first Group III nitride semiconductor layer and the first oxide layer.

Abstract: It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

Abstract: A semiconductor device, which includes an active layer made of a first semiconductor layer formed on a substrate, is designed so that a first oxidized area made of an oxide layer is formed on the active layer. The first oxidized area further aids in reducing a reactive current so that it becomes possible to achieve a semiconductor device having superior device characteristics.

Abstract: A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.

Abstract: A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

Abstract: A substrate with a second semiconductor layer and a second mask film formed thereon is subjected to a heat treatment in an oxidizing atmosphere. Thus, second oxidized regions are formed through oxidization of the second semiconductor layer in regions of the second semiconductor layer that are not covered by the second mask film. At the same time, a second base layer is formed in each region that is interposed by the second oxidized regions. Then, the second mask film is removed, and a third semiconductor layer is selectively grown on the surface of the second base layer that is exposed between the second oxidized regions so as to cover the second oxidized regions, after which the first oxidized regions and the second oxidized regions covering the entire upper surface of the substrate are removed.

Abstract: A semiconductor laser device has a stacked structure formed on a main surface of a substrate (1) and including an MQW active layer (5) made of a group-III nitride semiconductor. The stacked structure has a stripe-shaped waveguide formed on a main surface thereof. One of opposing facets of the waveguide is a light emitting facet. A first region having a forbidden band width Eg1 in the MQW active layer (5), and a second region located adjacent to the first region and having a forbidden band width Eg2 in the MQW active layer (5) (where Eg2?Eg1) are formed around the recess (2). The waveguide is formed so as to include the first region and the second region, and so as not to include the stepped region. The light emitting facet is formed in one (5a) of the first region and the second region, which has a shorter light absorption wavelength.

Abstract: A semiconductor laser device includes a multilayer structure made of group III nitride semiconductors formed on a substrate. The multilayer structure includes a MQW active layer, and also includes a step region selectively formed in an upper portion thereof. In another upper portion of the multilayer structure, a ridge stripe portion including a waveguide, which extends in parallel to a principal surface of the multilayer structure, is formed. In the vicinity of the step region, a first region, in which the MQW active layer has a bandgap energy of Eg1, is formed, and a second region, which is adjacent to the first region and in which the MQW active layer has a bandgap energy of Eg2 (Eg2<Eg1), is formed. The waveguide, which is formed so as to include the first and second regions and so as not to include the step region, performs self-oscillation.

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.

Abstract: A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.

Abstract: The present invention aims to provide a long-lived semiconductor laser device with low threshold current and available for high-output operation in a blue-violet semiconductor laser device using a nitride semiconductor layer. In the semiconductor laser device, the following layers are sequentially formed on a GaN substrate 1: an n-type GaN layer 2; an n-type AlGaN cladding layer 3, a first n-type GaN guiding layer 4; and a p-type AlGaN blocking layer 6 (current-blocking layer), further a striped opening is formed on a portion of the p-type AlGaN blocking layer 6, a second n-type GaN guiding layer 5 is formed to cover the opening, and the following layers are sequentially formed on the second n-type GaN guiding layer 5: an InGaN multiple quantum well active layer 7; an undoped GaN guiding layer 8; a p-type AlGaN electron overflow suppression layer 9, a p-type AlGaN cladding layer 10, and a p-type GaN contact layer 11.

Abstract: A nitride semiconductor device comprises: a well layer of nitride semiconductor containing In and Ga; barrier layers of nitride semiconductor sandwiching the well layer, containing Al and Ga, and having a larger band gap energy than the well layer; and a thin film layer provided between the well layer and the barrier layer. The thin film layer is formed during lowering of the substrate temperature after formation of the barrier layer or during elevation of the substrate temperature after formation of the well layer.

Abstract: A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 ?m is formed, using an Au layer in the n-side electrode as an underlying layer.

Abstract: A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.