Patents by Inventor Masae Sahara

Masae Sahara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7948009
    Abstract: A nitride semiconductor epitaxial wafer includes a growth substrate including a surface for growing a nitride semiconductor thereon, a first structure layer formed on the growth substrate, a dislocation propagation direction changing layer formed on the first structure layer for changing a propagation direction of a dislocation propagated in the first structure layer into a lateral direction, a second structure layer formed on the dislocation propagation direction changing layer, and a buffer layer formed on the second structure layer for changing a propagation direction of a dislocation propagated in the second structure layer.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: May 24, 2011
    Assignee: Hitachi Cable, Ltd.
    Inventors: Yoshihiko Moriya, Takeshi Tanaka, Yohei Otoki, Masae Sahara
  • Publication number: 20090236634
    Abstract: A nitride semiconductor epitaxial wafer includes a growth substrate including a surface for growing a nitride semiconductor thereon, a first structure layer formed on the growth substrate, a dislocation propagation direction changing layer formed on the first structure layer for changing a propagation direction of a dislocation propagated in the first structure layer into a lateral direction, a second structure layer formed on the dislocation propagation direction changing layer, and a buffer layer formed on the second structure layer for changing a propagation direction of a dislocation propagated in the second structure layer.
    Type: Application
    Filed: March 17, 2009
    Publication date: September 24, 2009
    Applicant: Hitachi Cable, Ltd.
    Inventors: Yoshihiko Moriya, Takeshi Tanaka, Yohei Otoki, Masae Sahara