Abstract: Semiconductor processing equipment that has increased efficiency, throughput, and stability, as well as reduced operating cost, footprint, and faceprint is provided. Other than during deposition, the atmosphere of both the reaction chamber and the transfer chamber are evacuated using the transfer chamber exhaust port, which is located below the surface of the semiconductor wafer. This configuration prevents particles generated during wafer transfer or during deposition from adhering to the surface of the semiconductor wafer. Additionally, by introducing a purge gas into the transfer chamber during deposition, and by using an insulation separating plate 34, the atmospheres of the transfer and reaction chambers can be effectively isolated from each other, thereby preventing deposition on the walls and components of the transfer chamber.

Abstract: A gas-line system used for a semiconductor-manufacturing apparatus with at least two reactors, includes at least one gas source; a flow-divider means including an input port on the primary side, which receives a source gas from the gas source, and an output port on the secondary side, which outputs an inputted source gas by equally distributing it. The input port on the primary side is connected with the gas source and the output port on the secondary side is connected with the reactors; and one exhaust pump for exhausting gases within the reactors, which is connected with the reactors. It is desirable that the gas-line system is provided between the reactors and the exhaust pump, and an APC is included for controlling pressure for each reactor.

Abstract: A compact single-wafer-processing semiconductor-manufacturing apparatus for processing semiconductor substrates is characterized in that at least two units, each of which comprises a reactor for growing a film on a semiconductor substrate and a load lock chamber for having the semiconductor substrate wait in a vacuum and which is directly connected with the reactor via a gate valve, are modularized and these modularized reactor units can be configured as a cluster through an atmospheric front end (AFE). Inside the load lock chamber, a substrate transfer mechanism comprising a thin link arm for transferring a semiconductor substrate into the reactor is provided.

Abstract: The equipment comprises a semiconductor-processing device in which a load-lock chamber, a transfer chamber and a reaction chamber are modularized into, a main frame, a stand-alone chamber frame on which the semiconductor-processing device is placed, a sliding mechanism for enabling attaching/removing of the chamber frame to/from the main frame smoothly, and a positioning mechanism for fixing a position of the chamber frame. This enables the processing device to be attached and removed at will. The method comprises pulling out from the main frame the chamber frame, on which the modularized semiconductor-processing device is placed; forming a maintenance space inside the main frame; maintaining the semiconductor-processing device and peripherals attached in the vicinity of the main frame, and putting the chamber frame with the processing device back into the main frame.

Abstract: Semiconductor processing equipment that has increased efficiency, throughput, and stability, as well as reduced operating cost, footprint, and faceprint is provided. Other than during deposition, the atmosphere of both the reaction chamber and the transfer chamber are evacuated using the transfer chamber exhaust port, which is located below the surface of the semiconductor wafer. This configuration prevents particles generated during wafer transfer or during deposition from adhering to the surface of the semiconductor wafer. Additionally, by introducing a purge gas into the transfer chamber during deposition, and by using an insulation separating plate 34, the atmospheres of the transfer and reaction chambers can be effectively isolated from each other, thereby preventing deposition on the walls and components of the transfer chamber.

Abstract: A gas-line system used for a semiconductor-manufacturing apparatus with at least two reactors, includes at least one gas source; a flow-divider means including an input port on the primary side, which receives a source gas from the gas source, and an output port on the secondary side, which outputs an inputted source gas by equally distributing it. The input port on the primary side is connected with the gas source and the output port on the secondary side is connected with the reactors; and one exhaust pump for exhausting gases within the reactors, which is connected with the reactors. Tt is desirable that the gas-line system is provided between the reactors and the exhaust pump, and an APC is included for controlling pressure for each reactor.

Abstract: A compact single-wafer-processing semiconductor-manufacturing apparatus for processing semiconductor substrates is characterized in that at least two units, each of which comprises a reactor for growing a film on a semiconductor substrate and a load lock chamber for having the semiconductor substrate wait in a vacuum and which is directly connected with the reactor via a gate valve, are modularized and these modularized reactor units can be configured as a cluster through an atmospheric front end (AFE). Inside the load lock chamber, a substrate transfer mechanism comprising a thin link arm for transferring a semiconductor substrate into the reactor is provided.

Abstract: A transfer mechanism is provided for placing a wafer at a prescribed position on an arm without any additional step. The transfer mechanism for transferring a workpiece into and from a storage section comprises an arm member for holding a workpiece having a projection which can be contacted with an edge of the workpiece at the tip end portion thereof, a movement mechanism for reciprocating the arm member between a retracted and an extended positions while holding the workpiece thereon to transfer the workpiece to and from the storage section, and a positioning member which is positioned in the vicinity of the arm member and can be contacted with the edge of the workpiece for positioning the held workpiece in a prescribed position on the arm member.