Patents by Inventor Masafumi Ata

Masafumi Ata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7892063
    Abstract: A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
    Type: Grant
    Filed: January 14, 2009
    Date of Patent: February 22, 2011
    Assignee: Sony Corporation
    Inventors: Dharam Pal Gosain, Hisashi Kajiura, Ryuichiro Maruyama, Masashi Shiraishi, Houjin Huang, Koji Kadono, Shigeaki Wachi, Masafumi Ata
  • Patent number: 7828620
    Abstract: A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
    Type: Grant
    Filed: January 8, 2004
    Date of Patent: November 9, 2010
    Assignee: Sony Corporation
    Inventors: Dharam Pal Gosain, Hisashi Kajiura, Ryuichiro Maruyama, Masashi Shiraishi, Houjin Huang, Koji Kadono, Shigeaki Wachi, Masafumi Ata
  • Patent number: 7790539
    Abstract: A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer.
    Type: Grant
    Filed: November 20, 2008
    Date of Patent: September 7, 2010
    Assignee: Sony Corporation
    Inventors: Ryuichiro Maruyama, Masafumi Ata, Masashi Shiraishi
  • Patent number: 7771891
    Abstract: Disclosed herein are an ionic conductor including a proton conductor, a process for production thereof, and an electrochemical device (such as fuel cell) with said ionic conductor, said ionic conductor being superior in ionic conductivity, water resistance, and film forming properties. The ionic conductor is formed from a polymer in which carbon clusters having ion dissociating functional groups are bonded to each other through connecting groups. The polymer is less water-soluble and more chemically stable than a derivative composed solely of carbon clusters; therefore, it permits many ion dissociating functional group to be introduced thereinto. Moreover, if ion dissociating functional groups are introduced into also the connecting group, it is possible to prevent the concentration of ion dissociating functional groups from decreasing as the result of polymerization. The polymer can be easily synthesized by simple condensation, substitution, and hydrolysis.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: August 10, 2010
    Assignee: Sony Corporation
    Inventors: Koichiro Hinokuma, Bjoern Pietzak, Constance Gertrud Rost, Masafumi Ata, Yongming Li, Kazuaki Fukushima
  • Patent number: 7719032
    Abstract: A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer.
    Type: Grant
    Filed: November 5, 2003
    Date of Patent: May 18, 2010
    Assignee: Sony Corporation
    Inventors: Ryuichiro Maruyama, Masafumi Ata, Masashi Shiraishi
  • Patent number: 7651803
    Abstract: Disclosed herein are an ionic conductor including a proton conductor, a process for production thereof, and an electrochemical device (such as fuel cell) with said ionic conductor, said ionic conductor being superior in ionic conductivity, water resistance, and film forming properties. The ionic conductor is formed from a polymer in which carbon clusters having ion dissociating functional groups are bonded to each other through connecting groups. The polymer is less water-soluble and more chemically stable than a derivative composed solely of carbon clusters; therefore, it permits many ion dissociating functional group to be introduced thereinto. Moreover, if ion dissociating functional groups are introduced into also the connecting group, it is possible to prevent the concentration of ion dissociating functional groups from decreasing as the result of polymerization. The polymer can be easily synthesized by simple condensation, substitution, and hydrolysis.
    Type: Grant
    Filed: November 20, 2006
    Date of Patent: January 26, 2010
    Assignee: Sony Corporation
    Inventors: Koichiro Hinokuma, Bjoern Pietzak, Constance Gertrud Rost, Masafumi Ata, Yongming Li, Kazuaki Fukushima
  • Publication number: 20090121605
    Abstract: A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
    Type: Application
    Filed: January 14, 2009
    Publication date: May 14, 2009
    Applicant: Sony Corporation
    Inventors: Dharam Pal Gosain, Hisashi Kajiura, Ryuichiro Maruyama, Masashi Shiraishi, Houjin Huang, Koji Kodono, Shigeaki Wachi, Masafumi Ata
  • Publication number: 20090105357
    Abstract: Disclosed herein are an ionic conductor including a proton conductor, a process for production thereof, and an electrochemical device (such as fuel cell) with said ionic conductor, said ionic conductor being superior in ionic conductivity, water resistance, and film forming properties. The ionic conductor is formed from a polymer in which carbon clusters having ion dissociating functional groups are bonded to each other through connecting groups. The polymer is less water-soluble and more chemically stable than a derivative composed solely of carbon clusters; therefore, it permits many ion dissociating functional group to be introduced thereinto. Moreover, if ion dissociating functional groups are introduced into also the connecting group, it is possible to prevent the concentration of ion dissociating functional groups from decreasing as the result of polymerization. The polymer can be easily synthesized by simple condensation, substitution, and hydrolysis.
    Type: Application
    Filed: December 19, 2008
    Publication date: April 23, 2009
    Applicant: SONY CORPORATION
    Inventors: Koichiro Hinokuma, Bjoern Pietzak, Constance Gertrud Rost, Masafumi Ata, Yongming Li, Kazuaki Fukushima
  • Publication number: 20090075407
    Abstract: A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer.
    Type: Application
    Filed: November 20, 2008
    Publication date: March 19, 2009
    Applicant: Sony Corporation
    Inventors: Ryuichiro Maruyama, Masafumi Ata, Masashi Shiraishi
  • Publication number: 20080315746
    Abstract: A method of manufacturing a fine structure capable of accurately controlling formation positions of tubular structures made of carbon or the like is provided. Column-shaped protrusions (11) are formed on a substrate (10). Next, a catalyst material (20) such as iron (Fe) is adhered to the substrate (10). Subsequently, by providing the substrate (10) with heat treatment, the catalyst material (20) is melted and agglomerated on the side faces (11A) of the protrusions (11), and thereby cyclic catalyst patterns made of the catalyst material (20) are formed on the side faces (11A) of the protrusions (11). After that, tubular structures (30) in a state of tube are grown by using the catalyst patterns. The tubular structures (30) become carbon (nano) pipes, which are raised from the side faces (11A) of the protrusions (11) and whose ends (30A) are opened. The tubular structures (30) can be formed correspondingly to the positions of the protrusions (11) accurately.
    Type: Application
    Filed: August 31, 2004
    Publication date: December 25, 2008
    Inventors: Dharam Pal Gosain, Hisashi Kajiura, Yosuke Murakami, Masafumi Ata
  • Publication number: 20080124502
    Abstract: A manufacturing method of carbon nanotubes capable of mass-producing DWCNT with high throughput and a low defect incidence ratio is provided. In a vacuum chamber (1), a first electrode (2) having a hollow (2a) and a rod-like second electrode (3) are included. Inert gas such as helium gas, nitrogen gas, and argon gas is introduced into the vacuum chamber (1), the atmosphere not containing hydrogen gas and oxygen gas is created, and in this state, arc discharge is generated between the first electrode (2) and the second electrode (3). The heat generated by arc discharge is moderately stored on the surface of the inner side surrounded by the first electrode (2), and temperatures on the surface of the first electrode (2) are maintained at the temperatures suitable for producing the DWCNT (8). Thereby, the thready DWCNT (8) can be continuously produced without pause starting with a catalyst (6).
    Type: Application
    Filed: July 15, 2004
    Publication date: May 29, 2008
    Inventors: Houjin Huang, Hisashi Kajiura, Masafumi Ata
  • Publication number: 20070092800
    Abstract: Disclosed herein are an ionic conductor including a proton conductor, a process for production thereof, and an electrochemical device (such as fuel cell) with said ionic conductor, said ionic conductor being superior in ionic conductivity, water resistance, and film forming properties. The ionic conductor is formed from a polymer in which carbon clusters having ion dissociating functional groups are bonded to each other through connecting groups. The polymer is less water-soluble and more chemically stable than a derivative composed solely of carbon clusters; therefore, it permits many ion dissociating functional group to be introduced thereinto. Moreover, if ion dissociating functional groups are introduced into also the connecting group, it is possible to prevent the concentration of ion dissociating functional groups from decreasing as the result of polymerization. The polymer can be easily synthesized by simple condensation, substitution, and hydrolysis.
    Type: Application
    Filed: November 20, 2006
    Publication date: April 26, 2007
    Applicant: Sony Corporation
    Inventors: Koichiro Hinokuma, Bjoern Pietzak, Constance Rost, Masafumi Ata, Yongming Li, Kazuaki Fukushima
  • Patent number: 7196386
    Abstract: A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a fullerene thin film being from 0.5 nm to 5 ?m thick, for example. The fullerene has a hollow sized, for example, from 0.1 nm to 50 nm. A paramagnetic material is included in this hollow. A fermi vector of the fullerene thin film well laps over small number of spin band or plenty of spin band of a ferromagnetic fixed layer (23) and a ferromagnetic free layer (25). Further, spin orientations of the included paramagnetic material are random. Further, electron spin in the fullerene is in a quantized state in a pseudo zero dimensional space. Thereby, a spin coherence length becomes long in the fullerene thin film, and scatteration of spin-polarized conduction electrons goes away.
    Type: Grant
    Filed: October 2, 2003
    Date of Patent: March 27, 2007
    Assignee: Sony Corporation
    Inventors: Koji Kadono, Masafumi Ata
  • Publication number: 20070065974
    Abstract: There is provided a method for producing a field effect semiconductor device, e.g., a field effect transistor 6 using carbon nanotubes in a channel layer 5, wherein the method includes the step of subjecting the carbon nanotubes to plasma treatment to change a physical or chemical state of the carbon nanotubes. Thus, there can be provided a method which is advantageous in that the method easily produces a field effect semiconductor device which has a current path, e.g., a channel layer, having carbon nanotubes uniformly dispersed therein, and which is prevented from suffering deterioration of the device characteristics due to the formation of bundles of carbon nanotubes.
    Type: Application
    Filed: September 7, 2004
    Publication date: March 22, 2007
    Inventors: Masashi Shiraishi, Masafumi Ata
  • Patent number: 7161182
    Abstract: A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron-accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film.
    Type: Grant
    Filed: December 9, 2002
    Date of Patent: January 9, 2007
    Assignees: Sony Corporation, Research Institute of Innovative Technology for the Earth
    Inventors: Matthias Ramm, Masafumi Ata
  • Patent number: 7157183
    Abstract: A proton conductor mainly contains a carbonaceous material derivative, such as, a fullerene derivative, a carbon cluster derivative, or a tubular carbonaceous material derivative in which groups capable of transferring protons, for example, —OH groups or —OSO3H groups are introduced to carbon atoms of the carbonaceous material derivative. The proton conductor is produced typically by compacting a powder of the carbonaceous material derivative. The proton conductor is usable, even in a dry state, in a wide temperature range including ordinary temperature. In particular, the proton conductor mainly containing the carbon cluster derivative is advantageous in increasing the strength and extending the selection range of raw materials. An electrochemical device, such as, a fuel cell, that employs the proton conductor is not limited by atmospheric conditions and can be of a small and simple construction.
    Type: Grant
    Filed: June 14, 2002
    Date of Patent: January 2, 2007
    Assignee: Sony Corporation
    Inventors: Koichiro Hinokuma, Björn Pietzak, Constance Gertrud Rost, Masafumi Ata
  • Patent number: 7153608
    Abstract: An ionic conductor, such as a proton conductor, a process for production thereof, and an electrochemical device, such as fuel cell, that includes the ionic conductor is provided. The ionic conductor of the present invention is formed from a polymer in which carbon clusters having ion dissociating functional groups are bonded to each other through connecting groups which can also include one or more ion dissociating functional groups. In this regard, the polymer is less water-soluble and more chemically stable than a derivative composed solely of carbon clusters, thus displaying enhanced ionic conduction properties.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: December 26, 2006
    Assignee: Sony Corporation
    Inventors: Koichiro Hinokuma, Bjoern Pietzak, Constance Gertrud Rost, Masafumi Ata, Yongming Li, Kazuaki Fukushima
  • Publication number: 20060205105
    Abstract: A microelectronic device and a method for producing the device can overcome the disadvantages of known electronic devices composed of carbon molecules, and can deliver performance superior to the known devices. An insulated-gate field-effect transistor includes a multi-walled carbon nanotube (10) having an outer semiconductive carbon nanotube layer (1) and an inner metallic carbon nanotube layer (2) that is partially covered by the outer semiconductive carbon nanotube layer (1). A metal source electrode (3) and a metal drain electrode (5) are brought into contact with both ends of the semiconductive carbon nanotube layer (1) while a metal gate electrode (4) is brought into contact with the metallic carbon nanotube layer (2). The space between the semiconductive carbon nanotube layer (1) and the metallic carbon nanotube layer (2) is used as a gate insulating layer.
    Type: Application
    Filed: November 5, 2003
    Publication date: September 14, 2006
    Inventors: Ryuichiro Maruyama, Masafumi Ata, Masashi Shiraishi
  • Publication number: 20060108906
    Abstract: A method of manufacturing a tubular carbon molecule capable of regularly aligning a carbon nanotube with a finer spacing is provided. A catalyst is arranged on a material substrate (10) made of a semiconductor such as silicon (Si) and including iron (Fe) as a catalyst through the use of melting according to a modulated heat distribution (11). The heat distribution (11) is formed, for example, through diffracting an energy beam (12) by a diffraction grating (13). As a method of arranging the catalyst, for example, iron may be deposited in a planar shape or a projection shape in a position corresponding to the heat distribution (11), or the deposited iron may be used as a master to be transferred to another substrate. A carbon nanotube is grown through the use of the arranged catalyst. The grown carbon nanotube can be used as a recording apparatus, a field electron emission device, an FED or the like.
    Type: Application
    Filed: January 8, 2004
    Publication date: May 25, 2006
    Inventors: Dharam Gosain, Hisashi Kajiura, Ryuichiro Maruyama, Masashi Shiraishi, Houjin Huang, Koji Kadono, Shigeaki Wachi, Masafumi Ata
  • Patent number: 7029782
    Abstract: An electrochemical hydrogen flow rate control system is provided. The system has an electrochemical cell and a hydrogen flow rate control unit. The electrochemical cell includes a first electrode for generating protons (H+), a second electrode for converting the protons generated by said first electrode into hydrogen gas, and a proton conductive solid electrolyte membrane held between said first and second electrodes. The hydrogen flow rate control unit is adapted to generate a specific amount of hydrogen gas on the second electrode side. The proton conductive solid electrolyte membrane is made from a fullerene derivative obtained by introducing proton dissociative groups in carbon atoms of fullerene molecules. Such a control system is operable even in a non-humidified atmosphere and at room temperature and is configurable as lightweight and compact in system design.
    Type: Grant
    Filed: April 22, 2003
    Date of Patent: April 18, 2006
    Assignee: Sony Corporation
    Inventors: Ryuichiro Maruyama, Masafumi Ata, Makoto Oogane