Patents by Inventor Masafumi Hasimoto

Masafumi Hasimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a light-emitting semiconductor device
    Patent number: 6607595
    Abstract: Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlXGa1-xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1-XN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1-xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1-x
    Type: Grant
    Filed: October 2, 2000
    Date of Patent: August 19, 2003
    Assignees: Toyoda Gosei Co., Ltd., Kabushiki Kaisha Toyota Chuo Kenkyu sho, Nagoya University, Japan Science and Technology Corporation
    Inventors: Katsuhide Manabe, Akira Mabuchi, Hisaki Kato, Michinari Sassa, Norikatsu Koide, Shiro Yamazaki, Masafumi Hasimoto, Isamu Akasaki