Abstract: An imaging device comprising: in-substrate photoelectric converting devices arranged on the same plane in a semiconductor substrate; on-substrate photoelectric converting devices, formed on the same plane above the semiconductor substrate, each of which corresponds to each of at least a part of the in-substrate photoelectric converting devices and comprises a first electrode formed above the semiconductor substrate, a photoelectric converting layer formed on the first electrode and a second electrode formed on the photoelectric converting layer; a color filter layer that is formed above the semiconductor substrate and transmits a light in a different wave range from a wave range of a light to be absorbed by the photoelectric converting layer; and a signal reading section that reads a signal corresponding to an electric charge generated in the on-substrate photoelectric converting device and a signal corresponding to an electric charge generated in the in-substrate photoelectric converting device respectively.

Abstract: A solid-state imaging device is provided and includes: a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a plurality of semiconductor substrates between the substrate and the plurality of photoelectric conversion elements, each of the plurality of semiconductor substrates corresponding to each of the plurality of photoelectric conversion element groups; and a signal output section in the plurality of semiconductor substrates. The signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to a semiconductor substrate.

Abstract: A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, and the solid-state imaging device includes partitions for preventing light that is incident on the color filter of each pixel portion from entering adjacent pixel portions.

Abstract: A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, the solid-state imaging device includes partitions provided between the color filters of the adjoining pixel portions so as to cover side surfaces of the color filters, each of the photoelectric conversion portions includes a lower electrode provided over the substrate, an upper electrode provided over the lower electrode, and a photoelectric conversion layer provided between the lower electrode and the upper electrode, each of the pixel portions further includes a protective layer provided between the color filter and the upper electrode, and the protective layer has a thickness of greater than 0 ?m and smaller than or equal to 1.0 ?m.

Abstract: An image processing apparatus includes a color image data generation section 54 that generates color image data from an image pickup signal of a red component, an image pickup signal of a green component, and an image pickup signal of a blue component which are output from an image pickup device 100; an infrared image data generation section 53 that generates infrared image data from an image pickup signal of an infrared component output from the image pickup device 100; and a high-contrast infrared image data generation section 55 that generates high-contrast infrared image data using the color image data and the infrared image data. Contrast of the high-contrast infrared image data is more enhanced than that of the infrared image data.

Abstract: An imaging apparatus includes plural pixel portions each having a photoelectric conversion portion and an electric charge accumulating portion that accumulates electric charges. Imaging signals corresponding to amounts of the electric charges in the electric charge accumulating portions are read out. The imaging signals of two adjacent lines of pixel portions are added. In still-image shooting, a first operation and a second operation are performed every exposure operation. The first operation reads out the imaging signals using a pattern containing combinations of two adjacent lines, adds the imaging signals of the two adjacent lines and outputs the added image signals as a field signal. The second operation reads out the imaging signals using a pattern being obtained by shifting the pattern for the first operation by one line, adds the imaging signals of the two adjacent lines and outputs the added image signals as another field signal.

Abstract: An image print system for printing a picture from an image file having additional information, which enables high-quality image printing to be achieved using various types of image data and their additional information. Image data obtained by taking subjects are sent, together with their additional information, to an image reproduction system in a photographic laboratory. The image reproduction system carries out processing of the image data in accordance with the additional information, and produces its resultant images in the form of image prints. The additional information includes post-processing information for temporally or spatially correlating a series of images to combine them or to select some of them.

Abstract: A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, and the solid-state imaging device includes partitions for preventing light that is incident on the color filter of each pixel portion from entering adjacent pixel portions.

Abstract: A solid-state imaging device includes a substrate and a plurality of pixel portions arranged over the substrate, each of the pixel portions includes a photoelectric conversion portion provided over the substrate and a color filter provided over the photoelectric conversion portion, the solid-state imaging device includes partitions provided between the color filters of the adjoining pixel portions so as to cover side surfaces of the color filters, each of the photoelectric conversion portions includes a lower electrode provided over the substrate, an upper electrode provided over the lower electrode, and a photoelectric conversion layer provided between the lower electrode and the upper electrode, each of the pixel portions further includes a protective layer provided between the color filter and the upper electrode, and the protective layer has a thickness of greater than 0 ?m and smaller than or equal to 1.0 ?m.

Abstract: A solid-state image pickup element has: a photoelectric converting film which is stacked above a semiconductor substrate; plural photoelectric converting elements which are arranged in the row direction and the column direction on the semiconductor substrate, and signal charge accumulating portions in which signal charges generated in the photoelectric converting film are accumulated; vertical transfer paths which are formed in the semiconductor substrate, and which transfer signal charges accumulated in the photoelectric converting elements and the signal charge accumulating portions, in the column direction; a horizontal transfer path which transfers the signal charges transferred from the vertical transfer paths, in the row direction; and an output section which outputs color signals corresponding to the signal charges transferred from the horizontal transfer path.

Abstract: A solid-state image pickup apparatus includes a color filter including complementary color filter segments. When a shutter release bottom is pressed to its half-stroke or full-stroke position, light incident via the filter is picked up in a movie/photometry or a still picture mode, respectively. While signal charges are read out of an image sensor in accordance with the mode, the signal charges are digitized to become pixel data. In the movie/the photometry mode, despite that a plurality of pixel data are mixed together, a set of primary color pixel data are generated as if pixel signals were thinned out by mixture. In the still picture mode, all the pixels are sequentially read out and interpolated to generate primary color pixel data greater in number than photosensitive cells. The primary color data are raised in frequency to enhance the resolution of a picture.

Abstract: An information reader includes an imaging device that images a subject illuminated with light in a first wavelength region; an information-reading unit that reads information expressed by a site absorbing light in a second wavelength region based on imaging signals from the imaging device; and an information output unit, wherein the imaging device is a stack-typed imaging device that includes a plurality of pixel sections containing stacked two photoelectric conversion devices, with each of the two photoelectric conversion devices receiving light from the same position of the subject and converting it into the imaging signal, the two photoelectric conversion devices are a first photoelectric conversion device and a second photoelectric conversion device, and the information output unit generates the information based on a first imaging signal and a second imaging signal and outputs the information.

Abstract: An imaging device is provided and includes a plurality of pixel parts each including a photoelectric conversion layer that generates an electric charge according to an X-ray. The plurality of pixel parts includes: a substrate including a signal output unit that outputs a signal to an outside of the imaging device according to the electric charge generated in the photoelectric conversion layer; a lower electrode above the substrate; and an upper electrode above the lower electrode. The photoelectric conversion layer is disposed between the lower electrode and the upper electrode. The signal output unit includes a transistor of a single-crystal semiconductor. The lower electrode includes an electrically conductive material that absorbs at least an X-ray.

Abstract: A solid-state imaging device is provided and includes: a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a semiconductor substrate between the substrate and the plurality of photoelectric conversion elements, corresponding to each of the plurality of photoelectric conversion clement groups; and a signal output section in the semiconductor substrates. The signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to the semiconductor substrate.

Abstract: A light emitting/receiving element includes: a substrate; an organic layer which is provided above the substrate; a forward bias power supply which applies a bias voltage between both ends of the organic layer so as to inject charges from an outside into the organic layer; a reverse bias power supply which applies a bias voltage, which is opposite in polarity to the bias voltage applied by the forward bias power supply, between the both ends of the organic layer so as to extract charges generated in the organic layer to the outside; and a current detecting unit, wherein the organic layer includes an organic material which, when the bias voltage is applied by the forward bias power supply, has the light emitting function, and which, when the bias voltage is applied by the reverse bias power supply, has the photoelectric converting function.

Abstract: After electrode pads 20 formed on a silicon substrate 1 and an electrode 21 to be connected thereto are exposed, a photoelectric conversion layer 12 is formed via a first mask 23 which covers exposed surfaces of the electrode pads 20 and the electrode 21. Then, a second electrode 13 is formed on a third electrode via a second mask 26 in which an opening is formed. This establishes a connection between the second electrode 13 and the electrode pads 20.

Abstract: In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched between a common electrode film and pixel electrode films corresponding to respective pixels, and photo-charges generated in the photoelectric converting films are taken out through the pixel electrode films. In the solid-state image pickup device, a common electrode film for a first photoelectric converting film is used also as a common electrode film for a second photoelectric converting film, the first photoelectric converting film is stacked below the common electrode film, and the second photoelectric converting film is stacked above the common electrode film.

Abstract: An imaging device comprising: in-substrate photoelectric converting devices arranged on the same plane in a semiconductor substrate; on-substrate photoelectric converting devices, formed on the same plane above the semiconductor substrate, each of which corresponds to each of at least a part of the in-substrate photoelectric converting devices and comprises a first electrode formed above the semiconductor substrate, a photoelectric converting layer formed on the first electrode and a second electrode formed on the photoelectric converting layer; a color filter layer that is formed above the semiconductor substrate and transmits a light in a different wave range from a wave range of a light to be absorbed by the photoelectric converting layer; and a signal reading section that reads a signal corresponding to an electric charge generated in the on-substrate photoelectric converting device and a signal corresponding to an electric charge generated in the in-substrate photoelectric converting device respectively.

Abstract: An image processing apparatus includes a color image data generation section 54 that generates color image data from an image pickup signal of a red component, an image pickup signal of a green component, and an image pickup signal of a blue component which are output from an image pickup device 100; an infrared image data generation section 53 that generates infrared image data from an image pickup signal of an infrared component output from the image pickup device 100; and a high-contrast infrared image data generation section 55 that generates high-contrast infrared image data using the color image data and the infrared image data. Contrast of the high-contrast infrared image data is more enhanced than that of the infrared image data.

Abstract: An information reader includes an imaging device that images a subject illuminated with light in a first wavelength region; an information-reading unit that reads information expressed by a site absorbing light in a second wavelength region based on imaging signals from the imaging device; and an information output unit, wherein the imaging device is a stack-typed imaging device that includes a plurality of pixel sections containing stacked two photoelectric conversion devices, with each of the two photoelectric conversion devices receiving light from the same position of the subject and converting it into the imaging signal, the two photoelectric conversion devices are a first photoelectric conversion device and a second photoelectric conversion device, and the information output unit generates the information based on a first imaging signal and a second imaging signal and outputs the information.