Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, [(1-x).Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.

Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, ?(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.

Abstract: This disclosure relates to an electrically insulating filler for sheathed heaters. The filler includes globular and nonglobular particles containing at least 95 wt. % MgO, and the percentage of globular particles being at least 5 wt. %. The globular magnesia includes at least one single magnesia or a combination of magnesias selected from groups of sintered magnesias and electro-fused magnesias.

Abstract: A method of manufacturing silicon carbide crystals in which a rice husk raw material is pretreated with an acid solution (e.g., 5N to 6N H.sub.2 SO.sub.4, HCl or HNO.sub.3) prior to being heated in a furnace of non-oxidizing atmosphere. Pretreatment of the rice husks in this manner results in silicon carbide crystals of high purity.

Abstract: A method of manufacturing silicon carbide whiskers in which a carbon and silicon containing material having a thin configuration and sufficient porosity to permit both the passage of a gas therethrough and to provide spaces for growing whiskers therein is charged on a gas-permeable tray, and heated in a furnace of non-oxidizing atmosphere. The tray is moved intermittently through a series of temperature zones, increasing stage-by-stage from about 400.degree. C. to 1,300.degree. C., while a non-oxidizing gas is circulated through the porous material to remove any impurities. Thereafter, the heated tray is intermittently moved through a series of increasing temperature stages from about 1,350.degree. C. to 1,450.degree. C. to effect whisker growth. The treated silicon carbide-containing material is dispersed in a two-phase mixture of a hydrophobic organic liquid and water. The desired silicon carbide whiskers can be isolated from the aqueous phase.