Abstract: A print system has a terminal device, a printer including a printing unit, and a service server including a memory storing user identification information and a print-permitted amount. The print system has a controller to perform displaying a charge screen for receiving a charge of a printing amount to be printed by the printing unit, acquiring the received printing amount to be charged and first user identification information of a user, adding the acquired printing amount to the print-permitted amount associated with the first user identification information, acquiring a print-completed amount printed by the printing unit of the printer and second user identification information of a user who instructed the printing of the print-completed amount, subtracting the acquired print-completed amount from the print-permitted amount associated with the second user identification information stored in the memory, and determining whether printing is permitted or not based on the print-permitted amount.

Abstract: A warning device includes: a right turn determining part that determines that a vehicle will turn right if a turn signal thereof is in a right turn signal state, and vehicle speed thereof is equal to or less than creep speed; an oncoming vehicle is approach determining part that determines that another vehicle is approaching the vehicle as an oncoming vehicle if the vehicle will turn right, a vector indicating a travel direction of the vehicle and a vector indicating a travel direction of the other vehicle intersect with each other, and a position of the other vehicle is included in a predetermined angle range in front of the vehicle; and an output control part that causes a warning to be output if the other vehicle is approaching the vehicle, and a yaw rate of the vehicle is equal to or greater than a predetermined angular velocity.

Abstract: A warning device includes: an other vehicle approach determining part that determines that another vehicle is approaching a subject vehicle from a side of the subject vehicle A, if a subject vehicle travel vector and an other vehicle travel vector intersect with each other, and if the position of the other vehicle is included in a predetermined angle range defined laterally with respect to an azimuth angle of the subject vehicle A while it is determined that the subject vehicle A during traveling is in a temporary stop state, where its vehicle speed is equal to or less than a predetermined vehicle speed; and an output control part that causes a warning output part to output a warning on condition that the subject vehicle A in the temporary stop state starts travelling while the other vehicle is approaching the subject vehicle A.

Abstract: After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).

Abstract: Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

Abstract: After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).

Abstract: There is provided a regulating gas suction device, which forms a regulating gas flow for use in preventing air outside a vacuum container trying to invade into the vacuum container through a sealing member that tightly closes a gap between an upper end surface of the vacuum container and a peripheral edge of a top pate being opposed to each other from flowing toward a substrate at a coupling portion between the top plate and the vacuum container.

Abstract: Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

Abstract: A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.

Abstract: A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.

Abstract: A semiconductor device includes metal interconnects made from a multi-layer film composed of a first metal film formed on a semiconductor substrate with an insulating film sandwiched therebetween and a second metal film deposited on the first metal film. An interlayer insulating film having a via hole is formed on the metal interconnects. A third metal film is selectively grown on the second metal film within the via hole, so that a plug can be formed from the third metal film.

Abstract: An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

Abstract: An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

Abstract: A semiconductor device includes metal interconnects made from a multi-layer film composed of a first metal film formed on a semiconductor substrate with an insulating film sandwiched therebetween and a second metal film deposited on the first metal film. An interlayer insulating film having a via hole is formed on the metal interconnects. A third metal film is selectively grown on the second metal film within the via hole, so that a plug can be formed from the third metal film.

Abstract: A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103.

Abstract: On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched using the hemispherical grains as a first dotted mask, thereby forming a second dotted mask composed of the silicon dioxide film. The resulting second dotted mask is used to etch the silicon substrate to a specified depth from the surface thereof, thereby forming an aggregate of semiconductor micro-needles. Since the diameter of each of the semiconductor micro-needles is sufficiently small to cause the quantum size effects as well as has only small size variations, remarkable quantum size effects can be obtained. Therefore, it becomes possible to constitute a semiconductor apparatus with a high information-processing function by using the aggregate of semiconductor micro-needles (quantized region).

Abstract: An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

Abstract: A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.

Abstract: A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103.

Abstract: A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.