Abstract: Combination therapy for cancer makes use of HSP27 inhibitors and EGFR tyrosine kinase inhibitors or etiolates.

Abstract: Combination therapy for cancer makes use of HSP27 inhibitors and EGFR tyrosine kinase inhibitors or antifolates.

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).

Abstract: An electron-beam heating apparatus in which an electron-beam of a stable intensity can be obtained. The apparatus is provided with a heating unit having two electrodes comprising a cathode and an anode. A heating of a material is performed by using an electron-beam generated by glow discharge generated in a space between the two electrodes. The apparatus is provided with an electric power source and a current control unit. The electric power source supplies an electric current to the electrodes so as to generate the glow discharge in a space between the two electrodes. The current control unit controls the current flowing to the cathode so as to be constant to obtain a constant glow discharge formed in a space between the two electrodes. A constant electron-beam is obtained by the glow discharge.

Abstract: An apparatus for zone melting a thin semiconductor film comprises an first laser for heating the thin semiconductor film, at least one additional laser for heating an insulating substrate, a first temperature detecting device for detecting the temperature of a melted portion of the thin semiconductor film, and a second temperature detecting device for detecting the temperature of a solidified portion of the thin semiconductor film. The apparatus further comprises a first controller for controlling an output of the first laser so as to maintain the temperature of the melted portion in a first predetermined temperature range, and a second controller for controlling an output of the additional laser so as to maintain the temperature of the solidified portion in a second predetermined temperature range.

Abstract: A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.

Abstract: A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.

Abstract: A total contact type image sensor includes a transparent substrate, an opaque layer formed on the transparent substrate and having document illuminating windows, a photosensitive layer formed on the transparent substrate and the opaque layer, a plurality of photoelectric conversion elements arranged on the transparent substrate with a predetermined pitch, and a transparent protection layer which covers a surface of a stacked structure which is made up of the transparent substrate, the opaque layer, a photosensitive layer and the photoelectric conversion elements. The photoelectric conversion elements respectively have at least one concave portion in a plan view of the total contact type image sensor.

Abstract: A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.

Abstract: A thin film semiconductor which comprises a substrate, a single crystalline silicone thin film layer and an intermediate layer disposed between the substrate and the single-crystalline silicon thin film layer. Coefficient of the thermal expansion of the intermediate layer is between those of the substrate and the single-crystalline silicon. The intermediate layer absorbs thermal stress and relaxes strain remaining in the silicon layer, which strain is generated due to difference of thermal expansion coefficient between the substrate and the silicon layer. Due to the arrangement of the intermediate layer, it becomes possible to use various material as the substrate without generating micro-cracks and produce a semiconductor device using a large sized substrate.

Abstract: An amorphous silicon photosensor is disclosed, which comprises a photoconductive layer which comprises three or four amorphous silicon layers formed on a substrate, each layer containing at least one kind of atom selected from the group consisting of hydrogen, heavy hydrogen, and halogen atoms, and having two heterojunctions, in which the optical band gap of an amorphous silicon layer lying between the two heterojunctions is in the range of 1.6 to 1.8 eV, a first end amorphous silicon layer, to which light is applied, contains oxygen, has an optical band gap of 1.9 eV or more, and at least part of the layer indicates an i-type or p-type conductivity, and a second end amorphous silicon layer, to which light is not applied, contains oxygen, having an optical band gap of 1.9 eV or more, and at least part of the layer indicates an i-type or n-type conductivity.

Abstract: A perpendicular magnetic recording medium is disclosed, which comprises a substrate, a soft magnetic layer formed on the substrate, a lower recording layer having a coercive force of Hcl formed on the soft magnetic layer, and an upper recording layer having a coercive force of Hcu, with the coercive ratio of Hcu/Hcl being in the range of 1.4 to 3.3, that is, 1.4.ltoreq.Hcu/Hcl.ltoreq.3.3.

Abstract: A contact type image sensor has a transparent dielectric substrate, an upper transparent electrode, a lower electrode provided on the transparent dielectric substrate, a semiconductor thin film sandwiched between the upper transparent electrode and the lower electrode and constituting a photoelectric conversion part, a transparent dielectric layer formed on a plane of the lower electrode, and an upper electrode formed on the transparent dielectric layer and connected to the upper transparent electrode. The transparent dielectric layer constitutes a capacitance of the image sensor between the upper and lower electrodes.

Abstract: This invention relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer between said substrate and said amorphous silicon layer.This invention further relates to a photosensitive material for electrophotography having, on a substrate, an amorphous silicon layer comprising silicon atom as the matrix and containing at least one of hydrogen atom, halogen atom and heavy hydrogen atom, characterized by provided with a porous aluminum oxide layer having the surface treated with a silicide material between said substrate and said amorphous silicon layer.

Abstract: The present invention is concerned with a photosensitive material for electrophotography that comprises forming a photosensitive layer on a substrate, wherein said photosensitive layer is constructed by laminating a charge transfer layer, a first charge carrier generating layer and a second charge carrier generating layer in order from said substrate side to free surface, and said charge transfer layer and second charge carrier generating layer each has a band gap wider than that of said first charge carrier generating layer.