Patents by Inventor Masafumi Kunii
Masafumi Kunii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9328414Abstract: Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SinH2n+2 (n=2, 3, . . . ) and a hydrogen gas are used as film forming gases.Type: GrantFiled: June 30, 2008Date of Patent: May 3, 2016Assignee: Japan Display Inc.Inventor: Masafumi Kunii
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Patent number: 8686971Abstract: Disclosed herein is a liquid crystal display device including a liquid crystal panel having a first substrate, a second substrate facing the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and first and second electrodes formed on a surface side, of the first substrate, facing the second substrate, a transverse electric field being applied to the liquid crystal layer through the first and second electrodes, thereby displaying an image in a pixel area; wherein the first substrate includes: a light receiving element provided on the surface, of the first substrate, facing the second substrate, for receiving an incident light on a light receiving surface thereof, thereby forming data on the received light; and a planarizing film provided on the surface side, of the first substrate, facing the second substrate so as to cover the light receiving element.Type: GrantFiled: February 10, 2009Date of Patent: April 1, 2014Assignee: Japan Display West Inc.Inventors: Masafumi Kunii, Ryoichi Ito, Masanobu Ikeda
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Patent number: 8269927Abstract: Disclosed herein is a liquid crystal display including a liquid crystal panel including, a first substrate, a second substrate opposed to said first substrate, and a liquid crystal layer interposed between said first substrate and said second substrate, a plurality of pixels being arrayed in a first direction and in a second direction orthogonal to said first direction in a pixel area provided in a plane where said first substrate and said second substrate are opposed.Type: GrantFiled: May 5, 2009Date of Patent: September 18, 2012Assignee: Sony CorporationInventors: Masafumi Kunii, Go Yamanaka
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Patent number: 7915648Abstract: A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.Type: GrantFiled: December 9, 2008Date of Patent: March 29, 2011Assignee: Sony CorporationInventors: Natsuki Otani, Tsutomu Tanaka, Masafumi Kunii, Masanobu Ikeda, Ryoichi Ito
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Publication number: 20100164921Abstract: Improvement of the image quality and position detection accuracy is implemented. Operation of a backlight 300 to emit illuminating light from one face side of a liquid crystal panel 200 to a display region PA of the liquid crystal panel 200 is controlled based on reception light data obtained by an external light sensor element 32b. Here, the operation of the backlight 300 is controlled based on the reception light data obtained by the external light sensor element 32b disposed in the display region PA.Type: ApplicationFiled: November 27, 2008Publication date: July 1, 2010Applicant: SONY CORPORATIONInventors: Masumitsu Ino, Tsutomu Tanaka, Ryoichi Ito, Masafumi Kunii, Hiroyuki Ikeda, Masanobu Ikeda
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Patent number: 7700418Abstract: Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.Type: GrantFiled: March 31, 2009Date of Patent: April 20, 2010Assignee: Sony CorporationInventor: Masafumi Kunii
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Publication number: 20090279029Abstract: Disclosed herein is a liquid crystal display including a liquid crystal panel including, a first substrate, a second substrate opposed to said first substrate, and a liquid crystal layer interposed between said first substrate and said second substrate, a plurality of pixels being arrayed in a first direction and in a second direction orthogonal to said first direction in a pixel area provided in a plane where said first substrate and said second substrate are opposed.Type: ApplicationFiled: May 5, 2009Publication date: November 12, 2009Applicant: SONY CORPORATIONInventors: Masafumi Kunii, Go Yamanaka
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Publication number: 20090207153Abstract: Disclosed herein is a liquid crystal display device including a liquid crystal panel having a first substrate, a second substrate facing the first substrate, a liquid crystal layer disposed between the first substrate and the second substrate, and first and second electrodes formed on a surface side, of the first substrate, facing the second substrate, a transverse electric field being applied to the liquid crystal layer through the first and second electrodes, thereby displaying an image in a pixel area; wherein the first substrate includes: a light receiving element provided on the surface, of the first substrate, facing the second substrate, for receiving an incident light on a light receiving surface thereof, thereby forming data on the received light; and a planarizing film provided on the surface side, of the first substrate, facing the second substrate so as to cover the light receiving element.Type: ApplicationFiled: February 10, 2009Publication date: August 20, 2009Applicant: SONY CORPORATIONInventors: Masafumi Kunii, Ryoichi Ito, Masanobu Ikeda
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Publication number: 20090191672Abstract: Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.Type: ApplicationFiled: March 31, 2009Publication date: July 30, 2009Applicant: Sony CorporationInventor: Masafumi Kunii
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Publication number: 20090159893Abstract: A light-receiving element includes: a first-conductivity-type semiconductor region configured to be formed over an element formation surface; a second-conductivity-type semiconductor region configured to be formed over the element formation surface; an intermediate semiconductor region configured to be formed over the element formation surface between the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region, and have an impurity concentration lower than impurity concentrations of the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region. The light-receiving element further includes: a first electrode configured to be electrically connected to the first-conductivity-type semiconductor region; a second electrode configured to be electrically connected to the second-conductivity-type semiconductor region; and a control electrode configured to be formed in an opposed area that exists on the element formation surface.Type: ApplicationFiled: December 9, 2008Publication date: June 25, 2009Applicant: SONY CORPORATIONInventors: Natsuki Otani, Tsutomu Tanaka, Masafumi Kunii, Masanobu Ikeda, Ryoichi Ito
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Patent number: 7550328Abstract: Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.Type: GrantFiled: January 9, 2008Date of Patent: June 23, 2009Assignee: Sony CorporationInventor: Masafumi Kunii
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Publication number: 20090142912Abstract: A method of manufacturing a thin film semiconductor device that includes forming a thin film transistor on a substrate, forming a layer insulation film on the substrate, the layer insulation film containing no hydroxyl group in at least a film constituting a lowermost layer in the state of covering said thin film transistor and linking oxygen or hydrogen to dangling bonds in the semiconductor thin film constituting the thin film transistor by a heat treatment in a moisture atmosphere after the formation of the layer insulation film.Type: ApplicationFiled: December 4, 2008Publication date: June 4, 2009Applicant: SONY CORPORATIONInventor: Masafumi Kunii
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Publication number: 20090029530Abstract: Disclosed herein is a method of manufacturing a thin film semiconductor device includes the step of forming a silicon thin film including a crystalline structure on a substrate by a plasma CVD process in which a high order silane gas represented by the formula SinH2n+2 (n=2, 3, . . . ) and a hydrogen gas are used as film forming gases.Type: ApplicationFiled: June 30, 2008Publication date: January 29, 2009Applicant: SONY CORPORATIONInventor: Masafumi Kunii
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Publication number: 20080182368Abstract: Disclosed herein is a method for production of a thin-film semiconductor device which includes, a first step to form a gate electrode on a substrate, a second step to form a gate insulating film of silicon oxynitride on the substrate in such a way as to cover the gate electrode, a third step to form a semiconductor thin film on the gate insulating film, and a fourth step to perform heat treatment in an oxygen-containing oxidizing atmosphere for modification through oxygen binding with oxygen-deficient parts in the silicon oxynitride film constituting the gate insulating film.Type: ApplicationFiled: January 9, 2008Publication date: July 31, 2008Applicant: SONY CORPORATIONInventor: Masafumi Kunii
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Publication number: 20080119030Abstract: According to an embodiment of the present invention, there is provided an improved method for manufacturing a thin film semiconductor device. This method includes the step of depositing a silicon thin film including a crystalline structure on a substrate by plasma CVD in which a silane gas represented by the formula SinH2n+2 (n=1, 2, 3, . . . ) and a germanium halide gas are used as a source gas.Type: ApplicationFiled: October 29, 2007Publication date: May 22, 2008Applicant: Sony CorporationInventor: Masafumi Kunii
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Publication number: 20070298553Abstract: The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.Type: ApplicationFiled: June 15, 2007Publication date: December 27, 2007Inventor: Masafumi Kunii
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Publication number: 20060199317Abstract: The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.Type: ApplicationFiled: May 25, 2006Publication date: September 7, 2006Inventor: Masafumi Kunii
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Publication number: 20060051903Abstract: TFTs are formed on a substrate, and a layer insulation film containing no hydroxyl group in at least a lowermost layer film is formed in the state of covering the TFTs. Thereafter, a heat treatment is conducted in a moisture atmosphere, whereby oxygen or hydrogen is bound to dangling bonds present in a semiconductor thin film constituting the TFTs, and an enhancement of the denseness of the layer insulation film is contrived. The layer insulation film includes silicon nitride, for example.Type: ApplicationFiled: August 3, 2005Publication date: March 9, 2006Inventor: Masafumi Kunii
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Publication number: 20050070055Abstract: The production method of the thin film transistor according to the present invention involves the reactive heat CVD process to form the active layer and the source-drain layer. This offers the advantage of eliminating additional steps to crystallize the semiconductor thin film. The resulting stacked thin film transistor is composed of originally crystalline semiconductor thin films. Having the active layer and the source-drain layer formed from crystalline semiconductor thin film, the stacked thin film transistor has a faster working speed than the one formed from amorphous semiconductor thin film. Another advantage of eliminating steps for crystallization is uniform quality which would otherwise be adversely affected by crystallization. In addition, the fact that the source-drain layer is formed from a previously doped crystalline semiconductor thin film means that there is no need for any step to introduce impurities after film formation.Type: ApplicationFiled: September 15, 2004Publication date: March 31, 2005Inventor: Masafumi Kunii
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Patent number: 6734635Abstract: A process of crystallizing a semiconductor thin film previously formed on a substrate by irradiating the semiconductor thin film with a laser beam, includes: a preparation step of dividing the surface of the substrate into a plurality of division regions, and shaping a laser beam to adjust an irradiation region of the laser beam such that one of the division regions is collectively irradiated with one shot of the laser beam; a crystallization step of irradiating one of the division regions with the laser beam while optically modulating the intensity of the laser beam such that a cyclic light-and-dark pattern is projected on the irradiation region, and irradiating the same division region by at least one time after shifting the pattern such that the light and dark portions of the pattern after shifting are not overlapped to those of the pattern before shifting; and a scanning step of shifting the irradiation region of the laser beam to the next division region, and repeating the crystallization step for theType: GrantFiled: October 3, 2001Date of Patent: May 11, 2004Assignee: Sony CorporationInventors: Masafumi Kunii, Makoto Takatoku, Michio Mano