Abstract: A novel target molecule for pruritus was found, and a novel means for eliminating pruritus is provided.

Abstract: Provided is a drug superior for preventing and/or treating dementia. It contains a carbostyril derivative of the following formula (1) (wherein R is a cycloalkyl group, A is a lower alkyl group, and a single bond or a double bond is present between the 3-position and the 4-position of the carbostyril nucleus) and dihydroquercetin.

Abstract: A pipe joint including a female joint capable of further reliably preventing leakage of a fluid is provided. The pipe joint includes: a female joint; and a male joint configured to be inserted into the female joint. The female joint includes: a female joint body; a distribution pipe provided in the female joint body, the distribution pipe having a first orifice; a sleeve configured to move in an axial direction between the female joint body and the distribution pipe for opening and closing of the first orifice; and an elastic portion configured to press the sleeve toward a distal end side of the female joint body, the sleeve includes a first seal portion configured to seal a gap between the sleeve and the distribution pipe when the sleeve closes the first orifice, and the distribution pipe includes: a first seal surface sealed by the first seal portion; and a tapered surface slanted from a base end side of the distribution pipe toward the first seal surface with respect to the axial direction.

Abstract: A method for cooling a steel strip, comprising jetting mist to a steel strip passing through a cooling installation such that an amount of mist jetted to the steel strip is smaller in an edge portion in a width direction of the steel strip than in a center portion, sucking at least part of mist jetted to the steel strip, and cooling the steel strip at a sheet-passing speed such that, during a period between start and end of cooling, a temperature of the steel strip is within a film boiling temperature range and a temperature of the edge portion in the width direction of the steel strip is equal to or higher than a temperature of the center portion in at least a range of ? or more from the upstream side in the sheet-passing direction of a total cooling length of the cooling installation.

Abstract: A steel sheet shape control method includes, (A) setting a target correction shape of the steel sheet at a position of an electromagnet to a curved shape, (B) measuring a steel sheet shape when electromagnetic correction is performed, (C) calculating the steel sheet shape in a nozzle position based on the steel sheet shape, (D) repeating (B) and (C) by resetting the target correction shape to a curved shape having a smaller amount of warp, (E) when the amount of warp of the steel sheet shape at the position of the nozzle is less than the upper limit value, (F) calculating vibration of the steel sheet at the position of the nozzle, and (G) adjusting a control gain of the electromagnet until amplitude of vibration is less than a second upper limit value when the amplitude of the vibration is equal to or more than the second upper limit value.

Abstract: [Object] To provide a method for cooling a steel strip in a galvannealing furnace. The method performs mist cooling on a steel strip in a cooling zone of a galvannealing furnace and can achieve both productivity and quality.

Abstract: A steel sheet shape control method includes, (A) setting a target correction shape of the steel sheet at a position of an electromagnet to a curved shape, (B) measuring a steel sheet shape when electromagnetic correction is performed, (C) calculating the steel sheet shape in a nozzle position based on the steel sheet shape, (D) repeating (B) and (C) by resetting the target correction shape to a curved shape having a smaller amount of warp, (E) when the amount of warp of the steel sheet shape at the position of the nozzle is less than the upper limit value, (F) calculating vibration of the steel sheet at the position of the nozzle, and (G) adjusting a control gain of the electromagnet until amplitude of vibration is less than a second upper limit value when the amplitude of the vibration is equal to or more than the second upper limit value.

Abstract: A steel sheet shape control method includes, (A) setting a target correction shape of the steel sheet at a position of an electromagnet to a curved shape, (B) measuring a steel sheet shape when electromagnetic correction is performed, (C) calculating the steel sheet shape in a nozzle position based on the steel sheet shape, (D) repeating (B) and (C) by resetting the target correction shape to a curved shape having a smaller amount of warp, (E) when the amount of warp of the steel sheet shape at the position of the nozzle is less than the upper limit value, (F) calculating vibration of the steel sheet at the position of the nozzle, and (G) adjusting a control gain of the electromagnet until amplitude of vibration is less than a second upper limit value when the amplitude of the vibration is equal to or more than the second upper limit value.

Abstract: A steel sheet shape control method includes, (A) setting a target correction shape of the steel sheet at a position of an electromagnet to a curved shape, (B) measuring a steel sheet shape when electromagnetic correction is performed, (C) calculating the steel sheet shape in a nozzle position based on the steel sheet shape, (D) repeating (B) and (C) by resetting the target correction shape to a curved shape having a smaller amount of warp, (E) when the amount of warp of the steel sheet shape at the position of the nozzle is less than the upper limit value, (F) calculating vibration of the steel sheet at the position of the nozzle, and (G) adjusting a control gain of the electromagnet until amplitude of vibration is less than a second upper limit value when the amplitude of the vibration is equal to or more than the second upper limit value.

Abstract: A semiconductor device includes a thermoplastic resin case, a semiconductor chip mounted within the thermoplastic resin case, a metal terminal having a wire bonding surface and an opposing contact surface, and a wire connected between the wire bonding surface and the semiconductor chip. The contact surface of the metal terminal is thermoplastically bonded at an area to the inside of the thermoplastic resin case.

Abstract: A semiconductor device includes a semiconductor mounting substrate, a mother case having an opening and housing the semiconductor mounting substrate, a plurality of securing members provided along a rim of the mother case, a screw terminal, and a lid member. The screw terminal has a flat plate portion, an insertion portion extending from the flat plate portion, and a terminal bottom portion, is secured to the securing members by insertion of the insertion portion between adjacent securing members, and is electrically connected to the semiconductor mounting substrate on the terminal bottom portion side. The lid member closes the opening with the screw terminal secured to the securing members. The screw terminal is bent such that the flat plate portion faces an upper surface of the lid member closing the opening. The semiconductor device that can achieve reduction in size of the entire device is obtained.

Abstract: A semiconductor device includes a thermoplastic resin case, a semiconductor chip mounted within the thermoplastic resin case, a metal terminal having a wire bonding surface and an opposing contact surface, and a wire connected between the wire bonding surface and the semiconductor chip. The contact surface of the metal terminal is thermoplastically bonded at an area to the inside of the thermoplastic resin case.

Abstract: A semiconductor device includes a thermoplastic resin case, a semiconductor chip mounted within the thermoplastic resin case, a metal terminal having a wire bonding surface and an opposing contact surface, and a wire connected between the wire bonding surface and the semiconductor chip. The contact surface of the metal terminal is thermoplastically bonded at an area to the inside of the thermoplastic resin case.

Abstract: A semiconductor device includes a semiconductor mounting substrate, a mother case having an opening and housing the semiconductor mounting substrate, a plurality of securing members provided along a rim of the mother case, a screw terminal, and a lid member. The screw terminal has a flat plate portion, an insertion portion extending from the flat plate portion, and a terminal bottom portion, is secured to the securing members by insertion of the insertion portion between adjacent securing members, and is electrically connected to the semiconductor mounting substrate on the terminal bottom portion side. The lid member closes the opening with the screw terminal secured to the securing members. The screw terminal is bent such that the flat plate portion faces an upper surface of the lid member closing the opening. The semiconductor device that can achieve reduction in size of the entire device is obtained.

Abstract: A semiconductor device includes a terminal case containing a semiconductor element, a plurality of pin terminals of equal length mounted in the terminal case and electrically connected to the semiconductor element, the plurality of pin terminals projecting outward from a predetermined surface of the terminal case in the same direction, and at least one protruding pin terminal mounted in the terminal case and projecting outward from the predetermined surface of the terminal case in the same direction farther than the plurality of pin terminals.

Abstract: To provide a method for treating ballast water with a membrane, which can reliably remove a fouling substance derived from a gel-like substance and a fouling substance of mineral origin, the fouling substances attached to a membrane, by separating or breaking down the fouling substances, and can maintain the membrane flux for long periods. In a method for treating ballast water with a membrane, the method provided with, in or on a hull of a ship, the membrane treatment equipment 1 that separates a microorganism with a size equal to or greater than a predetermined size, a fouling substance attached to the surface of the membrane is dissolved, broken down, or removed by using a cleaning fluid containing a peroxide which is at least one selected from hydrogen peroxide, hypochlorous acid, and ozone water.

Abstract: A semiconductor device includes a thermoplastic resin case, a semiconductor chip mounted within the thermoplastic resin case, a metal terminal having a wire bonding surface and an opposing contact surface, and a wire connected between the wire bonding surface and the semiconductor chip. The contact surface of the metal terminal is thermoplastically bonded at an area to the inside of the thermoplastic resin case.

Abstract: The power semiconductor package includes a semiconductor mounting substrate, a mother case having an opening and containing the semiconductor mounting substrate therein, a securing member having a plurality of securing positions formed along a rim constituting the opening, and a screw terminal and a pin terminal secured at the rim and electrically connected to the semiconductor mounting substrate. The screw terminal and the pin terminal are each secured by the securing member at one of the plurality of securing positions thereof. Thus, the package can adapt to variation in shape and arrangement of terminals due to differences in circuit configuration and the like of the semiconductor apparatuses, and can reduce restriction on the layout within the enclosure.

Abstract: A screw block terminal is formed to have a block body, a nut, an electrode and an overhang portion, and the block body has first, second, third and fourth side surface portions, an upper surface portion and a lower surface portion. The overhang portion is extended from the first side surface portion of block body such that a sidewall portion is sandwiched between the overhang portion and the block body. A projection corresponding to wall-like bodies provided on a case member is formed on the overhang portion. On the third and fourth side surface portions, projected contact portions are formed, respectively, to enlarge a contact surface with an outer wall surface of the sidewall portion. Thus, a semiconductor device is provided that allows to improve resistance to tightening torpue of the screw block terminal.

Abstract: A screw block terminal is formed to have a block body, a nut, an electrode and an overhang portion, and the block body has first, second, third and fourth side surface portions, an upper surface portion and a lower surface portion. The overhang portion is extended from the first side surface portion of block body such that a sidewall portion is sandwiched between the overhang portion and the block body. A projection corresponding to wall-like bodies provided on a case member is formed on the overhang portion. On the third and fourth side surface portions, projected contact portions are formed, respectively, to enlarge a contact surface with an outer wall surface of the sidewall portion. Thus, a semiconductor device is provided that allows to improve resistance to tightening torpue of the screw block terminal.