Abstract: A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer which involves a first step of adhering an adhesive film for protection of a semiconductor wafer in which an adhesive layer is formed on one surface of a base film to a circuit-formed surface of the semiconductor wafer, a second step of heating the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered, a third step of processing a non-circuit-formed surface of the semiconductor wafer by fixing the semiconductor wafer to which the adhesive film for protection of the semiconductor wafer is adhered on a grinding machine or an abrasive machine, and a fourth step of peeling the adhesive film for protection of the semiconductor wafer from the semiconductor wafer. The method addresses warpage problems and can prevent breakage of wafers during conveyance even if the thickness of a wafer is reduced to approximately 150 ?m or less.

Abstract: The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1×105 Pa to 1×107 Pa at 150° C. and a thickness of from 3 ?m to 100 ?m is formed on both a surface and back surface of a base film having a melting point of at least 200° C. and a thickness of 10 ?m to 200 ?m. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 ?m.

Abstract: A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from ?50° C. to 5° C. at which tan ? of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5° C. to 50° C. at which tan ? of a dynamic viscoelasticity is maximized, and from 0.

Abstract: The present invention is to provide a surface protecting film for a semiconductor wafer which can prevent breakage of the semiconductor wafer even when the semiconductor wafer is thinned to not more than 200 ?m, and a method of protecting the semiconductor wafer using the protecting film. The present invention relates to a surface protecting adhesive film for a semiconductor wafer comprising a base film having an adhesive layer formed on one surface thereof, wherein the base film comprises a layer (A) having a storage elastic modulus of from 1×107 Pa to 1×109 Pa at a temperature range of from 20° C. to 180° C.

Abstract: A surface protecting adhesive film for a semiconductor wafer in which an adhesive layer is formed on one surface of a base film, wherein the adhesive layer comprises 100 weight parts of a polymer (A) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from ?50° C. to 5° C. at which tan ? of a dynamic viscoelasticity is maximized, from 10 weight parts to 100 weight parts of a polymer (B) having a functional group capable of reacting with a cross-linking agent and a temperature in a range of from more than 5° C. to 50° C. at which tan ? of a dynamic viscoelasticity is maximized, and from 0.

Abstract: The present invention is to provide a protecting method for a semiconductor wafer and an adhesive film for protection of a semiconductor wafer which makes it possible to straighten or avoid warpage in a semiconductor wafer and to prevent breakage of wafers during conveyance of wafers even if the thickness of a semiconductor wafer is thinned to approximately 150 ?m or less.

Abstract: The present invention relates to a surface protecting adhesive film for a semiconductor wafer in which an adhesive layer having a storage elastic modulus from 1×105 Pa to 1×107 Pa at 150° C, and a thickness of from 3 ?m to 100 ?m is formed on both a surface and back surface of a base film having a melting point of at least 200° C. and a thickness of 10 ?m to 200 ?m. According to the present invention, in a step of grinding the back side of a semiconductor wafer and removing a damaged layer generated on the back side, the semiconductor wafer can be prevented from being broken and being contaminated and the like even if a semiconductor wafer is thinned as low as 100 ?m.

Abstract: An object of the present invention is to provide a surface protecting adhesive film for a semiconductor wafer having excellent adhesive properties, breakage resistance and stain resistance. According to the invention, provided is a surface protecting adhesive film for a semiconductor wafer in which at least one layer of an intermediate layer and an adhesive layer are provided on one surface of a base film, a minimum value (G′ min) of storage elastic modulus of an adhesive layer (B) at from 50° C. to 100° C. is from 0.07 MPa to 5 MPa, storage elastic modulus of at least one layer (C) of the intermediate layer at 50° C. is from 0.001 MPa to less than 0.