Patents by Inventor Masafumi Nakaishi

Masafumi Nakaishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5906912
    Abstract: An electroconductive pattern is formed by coating a substrate with a solution comprising 100 parts by weight of a soluble electroconductive polymer containing an organic radical capable of cross-linking with a cross-linking agent, 5 to 1,000 parts by weight of a cross-linking agent, and 100 to 100,000 parts by weight of a solvent; effecting cross-linking of the resultant coated film to obtain a cured electroconductive film having a sheet resistance of 10.sup.10 .OMEGA./.quadrature. or less; forming a pattern as an upper layer on the cured electroconductive layer; and transferring the pattern of the upper layer to the cured electroconductive layer.
    Type: Grant
    Filed: April 11, 1997
    Date of Patent: May 25, 1999
    Assignee: Fujitsu Limited
    Inventors: Keiji Watanabe, Miwa Igarashi, Ei Yano, Keiko Yano, Takashi Maruyama, Eiichi Hoshino, Kotaro Shirabe, Masafumi Nakaishi
  • Patent number: 5082695
    Abstract: A method of fabricating an X-ray exposure mask including the steps of forming a .beta.-SiC membrane by chemcial vapor deposition and simultaneously doping the membrane with at least one of phosphorous, boron, nitrogen and oxygen.
    Type: Grant
    Filed: February 24, 1989
    Date of Patent: January 21, 1992
    Assignee: 501 Fujitsu Limited
    Inventors: Masao Yamada, Masafumi Nakaishi, Kenji Nakagawa, Yuji Furumura, Takashi Eshita, Fumitake Mieno
  • Patent number: 4820546
    Abstract: A membrane of the present invention used for a mask for X-ray exposure is made of an amorphous of boron nitride carbide hydrogenated, containing 1 to 10 atomic percent of carbon. This membrane is made in a plasma CVD, whose source gases are ammonia, diborane and methane diluted in argon gas. The flow rate ratio of the ammonia to the diborane is 0.6 to 1.55, the deposition temperature is 350.degree. to 500.degree. C., the gas pressure is 60 to 250 Pa, the applied RF power is 0.1 to 0.17 W/cm.sup.2. Thus formed membrane is adequately transparent to a visible light and the X-ray used for mask alignment, while keeping the stiffness enough and the residual stress properly tensile.
    Type: Grant
    Filed: September 18, 1987
    Date of Patent: April 11, 1989
    Assignee: Fujitsu Limited
    Inventors: Masafumi Nakaishi, Masao Yamada